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Detection of residual stress in multi-crystalline silicon wafers using swept-sne frequency response data

This thesis presents audible vibratory mode data obtained by mechanically exciting acoustic modes in mc-Si wafers grown by EFG technique with various levels and distributions of residual stress. Stress maps obtained using scanning infrared polariscopy are presented, illustrating the variation of residual stress.Modal analyses of the wafers are performed using the finite element method and are in remarkably good agreement with the measured frequency response data. The calculated mode shapes were further validated through classic Chladni type patterns.The vibratory data is found to correlate with the residual stress measurements. The data is fit with both linear and quadratic models with correlation coefficients of 0.8. The results reveal a dependence of wafer audible mode frequencies on residual stress level that may be useful for solar cell mechanical quality control and breakage inspection.

Identiferoai:union.ndltd.org:USF/oai:scholarcommons.usf.edu:etd-3782
Date01 June 2005
CreatorsBest, Shawn R
PublisherScholar Commons
Source SetsUniversity of South Flordia
Detected LanguageEnglish
Typetext
Formatapplication/pdf
SourceGraduate Theses and Dissertations
Rightsdefault

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