The carrier capture and relaxation of Type II ZnTe/ZnSe
quantum dots(QDs) were investigated with ultrafast photoluminescence upconversion. We found that carrier relaxation of QDs under Volmer-Weber(VW) growth mode exhibits faster decay and rise than that of QDs under Stranski-Krastanow(SK) growth mode due to the wetting layer in SK growth mode provides as a pathway for carriers to diffuse and migrate from large(small) to small (larger) QDs. The wetting layer level was found by analyze the decay time of PL with different wavelength and temperature. The PL of VW mode and SK mode by using 532nm Nd-YAG laser also prove the existence of wetting layer. We interpret our results of VW mode in terms of Auger process with large carrier density.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0714104-152639 |
| Date | 14 July 2004 |
| Creators | Yeh, Ying-Chou |
| Contributors | I-Min Jiang, Der-Jun Jang, Li-Wei Tu, Jih-Chen Chiang, Chie-Tong Kuo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-152639 |
| Rights | unrestricted, Copyright information available at source archive |
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