In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM) structure. The top and bottom layers were made by Pt and TiN respectively, and the insulator was Zn:SiO2 grown by co-sputtering with SiO2 and Zinc. We found that doping Zinc into SiO2 insulator induced the resistive switching characteristic.
By the treatment of supercritical carbon dioxide (SCCO2) in Zn:SiO2 -based device,the operation current would decrease. In the result of x-ray electron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) , it showed that the defects in Zn:SiO2 thin-film were reduced. And the electric conduction mechanism of low resistance state made a change from ohmic conduction to hopping conduction.
To emerge spontaneous phenomenon of hopping conduction, the memory devices were fabricated with a multi-layer structure. In Auger electron spectroscopy (AES), we found the signal of zinc, split into three different kinds of peaks, which met the multi-layer structure. From I-V sweep measurement, the multi-layer structure device could be appeared the spontaneous hopping conduction mechanism.
In order to find out the initial state of electric conduction mechanism .We measured the device of Pt/Zn:SiO2/TiN with constant current forming. We found the initial state of electric conduction path out successfully, and it¡¦s operation current below 10 uA.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0828111-131830 |
| Date | 28 August 2011 |
| Creators | Tung, Cheng-Wei |
| Contributors | Der-Shin Gan, Ting-Chang Chang, Tsung-Ming Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830 |
| Rights | user_define, Copyright information available at source archive |
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