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Low power and reliable design methodologies for 3D ICs

The main objective of this dissertation is to explore and develop computer-aided-design methodologies and optimization techniques for reliability, performance, and power of through-silicon-via-based 3D IC designs. Through-silicon-via (TSV), a vertical interconnect element between dies, is the key enabling technology in 3D ICs. This new design element provides unprecedented design freedom as well as challenges. To maximize benefits and overcome challenges in TSV-based 3D ICs, new analysis methodologies and optimization techniques should be developed. In this dissertation, first, the robustness of 3D power delivery network is assessed under different power/ground TSV placement schemes and TSV RC variations. Next, thermo-mechanical stress and reliability problems are examined in full-chip/stack scale using the principle of linear superposition of stress tensors. Finally, physical design methods for low power 3D designs are explored to enhance the 3D power benefit over the 2D counterpart.

Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/51824
Date22 May 2014
CreatorsJung, Moongon
ContributorsLim, Sung Kyu
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Languageen_US
Detected LanguageEnglish
TypeDissertation
Formatapplication/pdf

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