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Study of CuIn1-xGaxSe2 Thin Film Prepared by Electrodeposition

We deposited CuInSe2 or CuIn1-xGaxSe2 on the substrate of bi-layer Mo by electrodeposition. Besides, we deposited bi-layer Mo by RF sputtering on soda-lime glass. First, we discussed the characteristic of Mo metal, and how can we have a good adhesion and a low resistivity simultaneously. Then, we deposited CuInSe2 and CuIn1-xGaxSe2 thin film by electrodeposition, and discussed the effect of depositing time, pH value in depositing solution, depositing current and different concentration
ions respectively.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-1118111-102109
Date18 November 2011
CreatorsLee, Yu-shin
ContributorsMin-Yen Yeh, Ming-kwei Lee, Lin, Wen-Tai
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1118111-102109
Rightsuser_define, Copyright information available at source archive

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