This thesis is composed of two designs: a PT (process, temperature) detector for 2¡ÑVDD output buffer with slew rate compensation, and a slew rate self-adjusting 2¡ÑVDD output buffer with PVT compensation.
In the first topic, a PT detector for 2¡ÑVDD output buffer with slew-rate compensa-tion is proposed. The driving current of 2¡ÑVDD output stages varies provided that the process and temperature conditions are different. For example, the driving current of 2¡ÑVDD output stage will be low at poor PVT corners. By contrast, the driving current will be high at good PVT corners. The process corner and temperature of NMOS and PMOS should be detected by threshold voltage variation thereof, respectively, such that the slew rate compensation is feasible. The proposed sensors will carry out the PT de-tection and compensate the driving current based on the detected corner, such that the slew rate variation of the output stage will be reduced.
The second topic is a slew rate self-adjusting 2¡ÑVDD output buffer with PVT compensation. An NMOS and PMOS process detector is proposed to detect the process corners of NMOS and PMOS, respectively, while the voltage and temperature sensor is proposed to detect the voltage and temperature variations by body effect.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0710112-144122 |
| Date | 10 July 2012 |
| Creators | Tseng, Hsin-Yuan |
| Contributors | Chua-Chin Wang, Chin-Long Wey, Shen-Fu Hsiao, Jih-ching Chiu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710112-144122 |
| Rights | user_define, Copyright information available at source archive |
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