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Interposer platforms featuring polymer-enhanced through silicon vias for microelectronic systems

Novel polymer-enhanced photodefined through-silicon via (TSV) and passive technologies have been demonstrated for silicon interposers to obtain compact heterogeneous computing and mixed-signal systems. These technologies include: (1) Polymer-clad TSVs with thick (~20 µm) liners to help reduce TSV losses and stress, and obtain optical TSVs in parallel for interposer-to-interposer long-distance communication; (2) Polymer-embedded vias with copper vias embedded in polymer wells to significantly reduce the TSV losses; (3) Coaxial vias in polymer wells to reduce the TSV losses with controlled impedance; (4) Antennas over polymer wells to attain a high radiation efficiency; and (5) High-Q inductors over polymer wells.

Cleanroom fabrication and characterization of the technologies have been demonstrated. For the fabricated polymer-clad TSVs, resistance and synchrotron x-ray diffraction (XRD) measurements have been demonstrated. High-frequency measurements up to 170 GHz and time-domain measurements up to 10 Gbps have been demonstrated for the fabricated polymer-embedded vias. For the fabricated coaxial vias and inductors, high-frequency measurements up to 50 GHz have been demonstrated. Lastly, for the fabricated antennas, measurements in the W-band have been demonstrated.

Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/53572
Date08 June 2015
CreatorsThadesar, Paragkumar A.
ContributorsBakir, Muhannad
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Languageen_US
Detected LanguageEnglish
TypeDissertation
Formatapplication/pdf

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