The hot carrier dynamics of Zn0.91Cd0.09Se/ZnSe multi-quantum wells were studied using the femtosecond time-resolved photoluminescence upconversion technique. The carrier cooling behavior was investigated for different compositions at various lattice temperatures. The hot carriers generated photoexcitation by 405nm Ti:sapphire laser pulses release their excess energy primarily through carrier-LO-phonon interaction. As the excess energy reduce to the amount that lower than the energy of LO phonon, the excess energy was released by carrier-TA-phonon scattering before radiative recombination occurs. We have determined the scattering times of carrier-LO-phonon scattering at different lattice temperatures. No hot phonon effects was found at low photoexcited carrier density. The dependence of photoluminescence lifetime on wavelength was also discussed.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0714104-171109 |
| Date | 14 July 2004 |
| Creators | Chung, Yung-Hsien |
| Contributors | I-Min Jiang, Jih-Chen Chiang, Der-Jun Jang, Li-Wei Tu, Chie-Tong Kuo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-171109 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.0017 seconds