Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:liu-91731 |
| Date | January 2013 |
| Creators | Kakanakova-Georgieva, Anelia, Nilsson, Daniel, Trinh, Xuan Thang, Forsberg, Urban, Nguyen, Son Tien, Janzén, Erik |
| Publisher | Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan, Linköpings universitet, Halvledarmaterial, Linköpings universitet, Tekniska högskolan |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Article in journal, info:eu-repo/semantics/article, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | Applied Physics Letters, 0003-6951, 2013, 102:13, s. 132113- |
Page generated in 0.0018 seconds