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Showing 1 to 10 of 10 (0.099 seconds)Spelling suggestions: "subject:"wide bandgap semiconductors"" "subject:"wide bandagap semiconductors""
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Alternative cadmium source precursors for the growth of cadmium sulphide and cadmium selenide by metal-organic chemical vapour depositionSheridan, Liam A. January 1996 (has links)
No description available.
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Plasmonic Effect of Metal Nanoparticles Deposited on Wide-Band Gap Metal Oxide Nanowire SubstrateGilzad Kohan, Mojtaba January 2017 (has links)
The application of nanowires (NWs) in solar cells (SCs) is of great interest due to their new promising aspects established in nanoelectronics. Semiconductors associated with plasmonic metal nanoparticles (NPs) such as Silver (Ag), Gold (Au) and Copper (Cu), show enhanced performance in solid state light absorbing SCs owing to plasmonic characteristic of noble metal NPs. Plasmonic NPs presented a significant role in development of visible light harvesting for many applications such as photocatalytic materials, photodynamic in Surface Enhanced Raman Spectroscopy (SERS) and photovoltaics (PVs). Integration of plasmonic NPs in semiconductor materials have opened the routes to expand new PV systems with high efficiency light absorption. In this project, we introduce the synthesis ZnO and TiO2 NWs used as N-type semiconducting substrates and various methods for isolating plasmonic metal NPs, which are later deposited on the semiconducting substrates. Vertically aligned ZnO and TiO2 NWs arrays were grown on the fluorine-doped tin oxide (FTO) conductive glass substrates via hydrothermal method at low temperature and the plasmonic NPs were synthesized by wet chemistry procedures and finally decorated on the NW films by using electrophoretic deposition. The impact of metal NPs loaded on the ZnO and TiO2 NWs substrates was studied by means of UV-vis spectroscopy and Photoluminescence (PL) spectroscopy. The absorbance spectra of individual NPs were recorded. Remarkably, the reflectance spectra of produced samples presented an enhancement in light absorption of the substrates after uptake of NPs on the ZnO and TiO2 NWs. The optical properties of the as grown ZnO NWs films decorated with Ag NPs (I) in direct contact with substrate and (II) in presence of an Al2O3 insulating spacer layer have been investigated. Both systems exhibited an enhancement in the UV band-edge emission from the ZnO when excited at 325 nm. In contrast, the broad bend defect emission of the samples did not have a significant change compare to bare ZnO substrates. The observed results suggested that the ZnO and TiO2 NWs decorated with plasmonic nanoparticles can boost the optical properties of MOs NWs substrates and hence effectively enhance the separation of photoexcited electron-hole pairs and photo-conversion applications.
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A DESIGN PARADIGM FOR DC GENERATION SYSTEMBo Zhang (6997520) 16 December 2020 (has links)
The design of a dc generation system is posed as a multi-objective optimization problem which simultaneously designs the generator and the power converter. The proposed design methodology captures the interaction between various system component models and utilizes the system steady state analysis, stability analysis, and disturbance rejection analysis. System mass and power loss are considered as the optimization metrics and minimized. The methodology is demonstrated through the design of a notional dc generation system which contains a Permanent Magnet Synchronous Machine (PMSM), passive rectifier, and a dc-dc converter. To this end, a high fidelity PMSM model, passive rectifier model, semiconductor model and passive component model are developed. The output of optimization is a set of designs forming a Pareto-optimal front. Based on the requirements and the application, a design can be chosen from this set of designs. The methodology is applied to SiC based dc generation system and Si based dc generation system to quantify the advantage of Wide Bandgap (WBG) devices. A prototype SiC based dc generation system is constructed and tested at steady state. Finally a thermal equivalent circuit (TEC) based PMSM thermal model is included in the design paradigm to quantify the impact of the PMSM’s thermal performance to the system design.
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Photoluminescence characterization of cadmium zinc tellurideAlshal, Mohamed 11 July 2019 (has links)
The demand for wide bandgap semiconductors for radiation detector applications has significantly increased in recent years due to an ever-growing need for safeguard measures and medical imaging systems amongst other applications. The need for these devices to be portable and efficient, and to operate at room temperature is important for practical applications. For radiation detectors, the semiconductor materials are mainly required to have an optimal energy gap, high average atomic number, good electrical resistivity and charge transport properties as well as purity and homogeneity.
Cadmium zinc telluride (CZT) distinctly stands out among the other choices of semiconductor materials for radiation detector applications, due to its attractive material properties and the room temperature operation possibility.
A tremendous amount of research is being conducted to improve CZT technology and its implementation into more commercial systems. Applications of CZT detector technology in national security, high energy physics, nuclear spectroscopy, and medical imaging systems are of special interests. However, CZT devices still face challenges that need to be understood and overcome in order to have more efficient radiation detector systems. One such challenge lies in the understanding of the surfaces of CZT detectors and surface recombination effects on charge transport, charge collection efficiency, and detector performance. Another common issue is the degradation of CZT detectors due to the presence of defects which can act as traps for the charge carriers and cause incomplete charge collection from the detectors. Thus, a major challenge is that, the commercial CZT crystals have large concentrations of defects and impurities that need to be characterized, and their effects on the detector performance should be studied.
Photoluminescence (PL) spectroscopy is a sensitive, non-contact and non-destructive method, suitable to characterize lower concentrations of point defects, such as substitutional impurities (donors, acceptors) and native defects in CZT crystals. A PL spectrum provides information regarding the defect nature of the crystal by determining the presence and the type of vacancies, interstitials, and impurities in the lattice.
The main objective of this thesis is to address the presence of the defects in CZT crystals, identify their types, and study their roles in the performance of x-ray radiation detectors using PL spectroscopy. Additionally, using PL method and different excitation sources including UV excitation, this thesis studies the surface of CZT samples and investigates the PL signature of the surface oxide of the samples, in an effort to optimize the surface processing and thereby improve CZT detector performance. / Graduate
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The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaNKakanakova-Georgieva, Anelia, Nilsson, Daniel, Trinh, Xuan Thang, Forsberg, Urban, Nguyen, Son Tien, Janzén, Erik January 2013 (has links)
Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.
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Extreme Implementations of Wide-Bandgap Semiconductors in Power ElectronicsColmenares, Juan January 2016 (has links)
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power. / <p>QC 20160922</p>
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Transport Properties of Wide Band Gap SemiconductorsTirino, Louis 12 April 2004 (has links)
Transport Properties of Wide Band Gap Semiconductors
Louis Tirino III
155 pages
Directed by Dr. Kevin F. Brennan
The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials.
The model chosen for this study is based on semiclassical transport theory as described by the Boltzmann Transport Equation. The calculations are performed using an ensemble Monte Carlo simulation method. The simulator includes realistic, numerical energy band structures derived from an empirical pseudo-potential method. The carrier-phonon scattering rates and impact ionization transition rates are numerically evaluated from the electronic band structure. Several materials systems are discussed and compared. The temperature-dependent, high-field transport properties of electrons in gallium arsenide, zincblende gallium nitride, and cubic-phase silicon carbide are compared.
Since hole transport is important in certain devices, the simulator is designed to simulate electrons and holes simultaneously. The bipolar simulator is demonstrated in the study of the multiplication region of gallium nitride avalanche photodiodes.
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Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode moduleFilsecker, Felipe 26 January 2017 (has links) (PDF)
This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level. The effects of current change rate, temperature variation, and different insulated-gate bipolar transistor (IGBT) modules for the switching cell, as well as parasitic oscillations are discussed. A comparison of the results with a commercial Si diode (6.5 kV and 1.2 kA) is included. The benchmark consists of an estimation of maximum converter output power, maximum switching frequency, losses and efficiency in a three level (3L) neutral point clamped (NPC) voltage-source converter (VSC) operating with SiC and Si diodes. The use of a model predictive control (MPC) algorithm to achieve higher efficiency levels is also discussed. The analysed diode module exhibits a very good performance regarding switching loss reduction, which allows an increase of at least 10 % in the output power of a 6-MVA converter. Alternatively, the switching frequency can be increased by 41 %.
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Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode moduleFilsecker, Felipe 07 December 2016 (has links)
This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level. The effects of current change rate, temperature variation, and different insulated-gate bipolar transistor (IGBT) modules for the switching cell, as well as parasitic oscillations are discussed. A comparison of the results with a commercial Si diode (6.5 kV and 1.2 kA) is included. The benchmark consists of an estimation of maximum converter output power, maximum switching frequency, losses and efficiency in a three level (3L) neutral point clamped (NPC) voltage-source converter (VSC) operating with SiC and Si diodes. The use of a model predictive control (MPC) algorithm to achieve higher efficiency levels is also discussed. The analysed diode module exhibits a very good performance regarding switching loss reduction, which allows an increase of at least 10 % in the output power of a 6-MVA converter. Alternatively, the switching frequency can be increased by 41 %.:1 Introduction
2 State of the art of SiC devices and medium-voltage diodes
2.1 Silicon carbide diodes and medium-voltage modules
2.2 Medium-voltage power diodes
3 Characterization of the SiC PiN diode module 37
3.1 Introduction
3.2 Experimental setup
3.3 Experimental results: static behaviour
3.4 Experimental results: switching behaviour
3.5 Comparison with 6.5-kV silicon diode
3.6 Oscillations in the SiC diode
3.7 Summary
4 Comparison at converter level
4.1 Introduction
4.2 Power device modelling
4.3 Determination of maximum converter power rating
4.4 Analysis
4.5 Increased efficiency through model predictive control
4.6 Summary
5 Conclusion
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Lanthanide Doped Wide Band Gap Semiconductors: Intra-4f Luminescence and Lattice Location Studies / Lanthanid-dotierte Halbleiter mit großer Bandlücke: Intra-4f Lumineszenz- und GitterplatzuntersuchungenVetter, Ulrich 15 July 2003 (has links)
No description available.
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