Variable pressure electron beam etching and lithography for Teflon AF has been demonstrated. The relation between dose and etching depth is tested under high vacuum and water vapor. High resolution structures as small as 75 nm half-pitch have been resolved. Several simulation tools were tested for surface plasmon excitation. Grating based dual mode surface plasmon excitation has been shown numerically and experimentally.
| Identifer | oai:union.ndltd.org:uky.edu/oai:uknowledge.uky.edu:ece_etds-1067 |
| Date | 01 January 2015 |
| Creators | Sultan, Mansoor A. |
| Publisher | UKnowledge |
| Source Sets | University of Kentucky |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Theses and Dissertations--Electrical and Computer Engineering |
Page generated in 0.0019 seconds