In the present work atom probe tomography (APT) was applied to analyze thin films used in semiconductor industry to investigate the capability of atom probe tomography as well as the dopant redistribution in thin silicide layer stacks. Different titanium silicide layer stacks are investigated and titanium diboride precipitates are identified by APT. Arsenic grain boundary segregation is verified by APT in cobalt silicide layer stacks. Furthermore APT measurements are compared to commonly used methods such as TEM and SIMS and found in good agreement. Each method exhibits its own advantages depending on the sample and the question. Atom probe tomography offers some unique features enabling three-dimensional analysis on the nanometer scale as shown on the mentioned thin film layer stacks.
| Identifer | oai:union.ndltd.org:uni-osnabrueck.de/oai:repositorium.ub.uni-osnabrueck.de:urn:nbn:de:gbv:700-2016021014232 |
| Date | 10 February 2016 |
| Creators | Ogiewa, Kirsten |
| Contributors | Prof. Dr. Joachim Wollschläger, Prof. Dr. Steffen Teichert |
| Source Sets | Universität Osnabrück |
| Language | English |
| Detected Language | English |
| Type | doc-type:doctoralThesis |
| Format | application/pdf, application/zip |
| Rights | http://rightsstatements.org/vocab/InC/1.0/ |
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