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Investigation of Interface Diffusion on the Reliability of AlGaN/GaN High Electron Mobility Transistor by Thermodynamic Modeling

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Identiferoai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:miami1344529070
Date14 August 2012
CreatorsUcci, Russell
PublisherMiami University / OhioLINK
Source SetsOhiolink ETDs
LanguageEnglish
Detected LanguageEnglish
Typetext
Sourcehttp://rave.ohiolink.edu/etdc/view?acc_num=miami1344529070
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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