We determined the dielectric function of the alloy system (AlxGa1−x)2O3 by spectroscopic
ellipsometry in the wide spectral range from 0.5 eV to 8.5 eV and for Al contents ranging from
x = 0.11 to x = 0.55. For the composition range x<0.4, we observe single phase material in the
b-modification and for larger Al content also the occurrence of γ-(Al,Ga)2O3. We derived spectra of
the refractive index and the absorption coefficient as well as energy parameters of electronic bandband
transitions by model analysis of the dielectric function. The dependence of the dielectric functions
lineshape and the energy parameters on x is highly continuous, reflecting theoretical expectations.
The data presented here provide a basis for a deeper understanding of the electronic properties
of this material system and may be useful for device engineering.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31190 |
| Date | 09 August 2018 |
| Creators | Schmidt-Grund, Rüdiger, Kranert, Christian, von Wenckstern, Holger, Zviagin, Vitaly, Lorenz, Michael, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0021-8979, 1089-7550, 165307 |
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