Tantalum and tantalum nitride thin films are
routinely applied as diffusion barriers in
state-of-the-art metallization systems of
microelectronic devices. In this work, such films
were prepared by reactive magnetron sputtering
on silicon and oxidized silicon substrates and
studied by spectroscopic ellipsometry in the
spectral range from 190 nm to
2.55 μm.
The complex refractive index for thick films
(75 to 380 nm) was modeled using a
Lorentz-Drude approach. These models were
applied to film stacks of
20 nm TaN / 20 nm Ta on
unoxidized and thermally oxidized Si.
With free oscillator parameters, accurate values
of the film thicknesses were obtained according
to cross-sectional scanning electron microscope (SEM)
measurements. At the same time, a strong
variation of the optical properties with film
thickness and substrate was observed.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:swb:ch1-200600325 |
| Date | 16 March 2006 |
| Creators | Waechtler, Thomas, Gruska, Bernd, Zimmermann, Sven, Schulz, Stefan E., Gessner, Thomas |
| Contributors | TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
| Publisher | Universitätsbibliothek Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:lecture |
| Format | application/pdf, text/plain, application/zip |
| Source | Oral contributed presentation; 4th Workshop Ellipsometry, 20-22 February 2006, Berlin, Germany |
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