In this thesis, the reactive rf magnetron sputtering was used to deposit (Ba,Sr)(Ti,Zr)O3 (BSTZ) thin films on Pt/Ti/SiO2/Si substrate with the optimal parameters. The post-treatments of rapid thermal annealing (RTA), conventional thermal annealing (CTA), O2 plasma, N2 plasma, and N2O plasma respectively were used to promote the dielectric characteristics.
The physical characteristics of BSTZ thin films were obtained by the analyses of XRD, SEM, and AFM. The influences of post-treatments on thin films were discussed. The electrical properties of BSTZ thin films were estimated through the measurement of leakage current on MIM structure with HP4194A and HP4156C semiconductor parameters analyzer. Also, the dependences of dielectric constants on applied voltage were discussed.
After annealing treatments, the dielectric constants were increased and the leakage currents were decreased respectively. But with the higher annealing temperature of CTA, the larger leakage currents were obtained. In the different atmosphere of plasma treatments, the leakage currents were decreased obviously. The dielectric constant was about 295 after O2 plasma treatment of 6 minutes succeeded with RTA at 600¢J for 2 minutes¡F it reveals that the leakage current was about 1.38x10-9 A/cm2 under the applied electrical field of 0.1 MV/cm. Therefore, to combine the annealing and plasma treatments properly could increase the dielectric characteristics effectively.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0705104-165917 |
| Date | 05 July 2004 |
| Creators | Chang, Chia-Hao |
| Contributors | Hung-Duen Yang, Teen-Hang Meen, Hsiung Chou, Ying-Chung Chen, Cheng-Fu Yang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705104-165917 |
| Rights | campus_withheld, Copyright information available at source archive |
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