We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroabsorption spectroscopy which is based on an evaluation of the spectra caused by a change in absorption due to an electric field (Stark effect). For a model system with a bulk heterojunction of BF-DPB and C60, we show that higher doping concentrations in both the electron and the hole transport layer increase the built-in voltage, leading to an enhanced short circuit current and solar cell performance.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:14-qucosa-147610 |
| Date | 17 July 2014 |
| Creators | Siebert-Henze, Ellen, Lyssenko, Vadim G., Fischer, Janine, Tietze, Max, Brueckner, Robert, Schwarze, Martin, Vandewal, Koen, Ray, Debes, Riede, Moritz, Leo, Karl |
| Contributors | AIP Publishing, |
| Publisher | Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:article |
| Format | application/pdf |
| Source | AIP Advances, 2014, Volume 4, Issue 4, ISSN: 2158-3226 |
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