A metal-insulator-metal (MIM) device is used to rectify high frequency radiation received through an antenna coupled to it. In this study, a Ta-SiO2-Ta MIM device was fabricated and characterized. SiO2 layers with different thicknesses of 2nm, 5nm and 8nm were deposited and evaluated both electrically and optically. Tantalum was deposited using a sputtering system, while the oxide was evaporated using an E-beam evaporator. A Keithley 4200-SCS system combined with a four-probe station was adopted to measure both current-voltage and capacitance-voltage (C-V) characteristics. The I-V curves for all MIM devices were almost linear except the one with 8nm of SiO2 exhibited some nonlinearity. The C-V measurement that was carried out at AC frequency showed changing resistance for all samples and the resistance decreased as the thickness decreased. However, the E-beam SiO2 was found not to be a desirable oxide for MIM application due to the existence of many defects. / Materials Engineering
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:AEU.10048/1098 |
| Date | 06 1900 |
| Creators | Guo, Wei |
| Contributors | Ken Cadien (Chemical and Materials Engineering), David Mitlin (Chemical and Materials Engineering), Mani Vaidyanathan (Electrical and Computer Engineering) |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
| Format | 1662000 bytes, application/pdf |
Page generated in 0.0016 seconds