SiC in Space is one of the experiments on KTH’s miniature satellite, MIST. The experiment carries out tests on bipolar junction transistors of silicon and silicon carbide. This thesis describes how the characteristics of a transistor can be measured using analog circuits. The presented circuit design will work as a prototype for the SiC in Space experiment. The prototype measures the base current, the collector current, the base-emitter voltage as well as the temperature of the transistor. This thesis describes how a test circuit may be designed. The selected design has been constructed in incremental steps, with each design choice explained. Different designs have been developed. The designs have been verified with simulations. We have also constructed and tested three different prototypes on breadboards and printed circuit boards. / SiC in Space är ett av experimenten på KTHs miniatyrsatellit, MIST. Experimentet utför test på bipolära transistorer av kisel och kiselkarbid. Detta examensarbete förklarar hur transistorns karakteristik kan mätas med analoga kretsar. Den framtagna kretsdesignen kommer att fungera som en prototyp till SiC in Space-experimentet. Prototypen mäter basströmmen, kollektorströmmen, bas-emitter-spänningen samt temperaturen för transistorn. Detta examensarbete förklarar hur en testkrets kan designas. Den valda designen byggs i inkrementella steg, där varje designval förklaras. Olika designer har utvecklats. Designerna har verifierats genom simuleringar. Vi har också konstruerat och testat tre olika prototyper på kopplingsdäck och kretskort.
Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:kth-191137 |
Date | January 2016 |
Creators | Ericson, Matthias, Silverudd, Johan |
Publisher | KTH, Skolan för informations- och kommunikationsteknik (ICT) |
Source Sets | DiVA Archive at Upsalla University |
Language | English |
Detected Language | English |
Type | Student thesis, info:eu-repo/semantics/bachelorThesis, text |
Format | application/pdf |
Rights | info:eu-repo/semantics/openAccess |
Relation | TRITA-ICT-EX ; 2016:37 |
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