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Previous issue date: 2011-01-27 / Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico / In this work we deposit via non-reactive magnetron sputtering of radio-frequency nanofilmes
of nitreto of aluminum(AlN). The nanofilms aluminum nitride are semiconductors materials
with high thermal conductivity, high melting point, piezoelectricity and wide band gap (6,
2 eV) with hexagonal wurtzite crystal structure, belonging to the group of new materials called
III-V nitrides in which together with the gallium nitride and indium nitride have attracted much
interest because they have physical and chemical properties relevant to new technological applications,
mainly in microelectronic and optoelectronic devices. Three groups were deposited
with thicknesses nanofilms time dependent on two substrates (glass and silicon) at a temperature
of 25 ? C. The nanofilms AlN were characterized using three techniques, X-ray diffraction,
Raman spectroscopy and atomic force microscopy (AFM), examined the morphology of these.
Through the analysis of X-rays get the thickness of each sample with its corresponding deposition
rate. The analysis of X-rays also revealed that nanofilms are not crystalline, showing
the amorphous character of the samples. The results obtained by the technique, atomic force
microscopy (AFM) agree with those obtained using the technique of X-rays. Characterization
by Raman spectroscopy revealed the existence of active modes characteristic of AlN in the
samples / Neste trabalho depositamos via magnetron sputtering de r?dio-frequ?ncia n?o reativo nanofilmes
de nitreto de alum?nio (AlN). Os nanofilmes de nitreto de alum?nio s?o materiais semicondutores
com alta condutividade t?rmica, elevado ponto de fus?o, piezoeletricidade e largo
"bandgap"(6;2 eV) com estrutura cristalina wurtz?tica hexagonal, pertencentes ao grupo de novos
materiais denominados nitretos III-V que em conjunto com o nitreto de g?lio e o nitreto
de ?ndio t?m despertado muito interesse por possu?rem propriedades f?sico-qu?micas relevantes
para novas aplica??es tecnol?gicas, principalmente em microeletr?nica e dispositivos optoeletr?nicos.
Foram depositados tr?s grupos de nanofilmes com as espessuras depend?ntes do
tempo, sobre dois tipos de substratos (vidro e sil?cio) a uma temperatura de 25?C. Os nanofilmes
de AlN foram caracterizados usando tr?s t?cnicas, a difra??o de raios-X, espectroscopia Raman
e microscopia de for?a at?mica (AFM), analisado-se a morfologia desses. Atrav?s da an?lise
dos raios-X obtemos a espessura de cada amostra com sua respectiva taxa de deposi??o. A an?lise
dos raios-X tamb?m revelou que os nanofilmes n?o s?o cristalinos, evidenciando o car?ter
amorfo das amostras. Os resultados obtidos atrav?s da t?cnica, microscopia de for?a at?mica
(AFM) concordam com os obtidos usando a t?cnica de raios-X. A caracteriza??o por espectroscopia
Raman evidenciou a exist?ncia de modos ativos caracter?sticos do AlN nas amostras
analisadas
| Identifer | oai:union.ndltd.org:IBICT/oai:repositorio.ufrn.br:123456789/16566 |
| Date | 27 January 2011 |
| Creators | Damasceno, Eduardo Moreira |
| Contributors | CPF:51233789449, http://buscatextual.cnpq.br/buscatextual/visualizacv.do?id=K4780822J1, Corr?a, Marcio Assolin, CPF:93928254049, http://lattes.cnpq.br/2531075321550052, Azevedo, S?rgio Andr? Fontes, CPF:38016532500, http://lattes.cnpq.br/2195090548621158, Feitosa, Carlos Chesman de Ara?jo |
| Publisher | Universidade Federal do Rio Grande do Norte, Programa de P?s-Gradua??o em F?sica, UFRN, BR, F?sica da Mat?ria Condensada; Astrof?sica e Cosmologia; F?sica da Ionosfera |
| Source Sets | IBICT Brazilian ETDs |
| Language | Portuguese |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, info:eu-repo/semantics/masterThesis |
| Format | application/pdf |
| Source | reponame:Repositório Institucional da UFRN, instname:Universidade Federal do Rio Grande do Norte, instacron:UFRN |
| Rights | info:eu-repo/semantics/openAccess |
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