Return to search

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital alloy heterostructures. By optimizing growth conditions and understanding the physics of hole and electron transport in these devices, we have fabricated nearly symmetric mobility p- and n-MOSFETs on a common Si₀.₅Ge₀.₅ virtual substrate. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3726
Date01 1900
CreatorsFitzgerald, Eugene A., Lee, Minjoo L., Leitz, Christopher W., Antoniadis, Dimitri A.
Source SetsM.I.T. Theses and Dissertation
Languageen_US
Detected LanguageEnglish
TypeArticle
Format460990 bytes, application/pdf
RelationAdvanced Materials for Micro- and Nano-Systems (AMMNS);

Page generated in 0.0021 seconds