Return to search

ELECTRON-BEAM PATTERNING OF TEFLON AF FOR SURFACE PLASMON RESONANCE SENSING

Variable pressure electron beam etching and lithography for Teflon AF has been demonstrated. The relation between dose and etching depth is tested under high vacuum and water vapor. High resolution structures as small as 75 nm half-pitch have been resolved. Several simulation tools were tested for surface plasmon excitation. Grating based dual mode surface plasmon excitation has been shown numerically and experimentally.

Identiferoai:union.ndltd.org:uky.edu/oai:uknowledge.uky.edu:ece_etds-1067
Date01 January 2015
CreatorsSultan, Mansoor A.
PublisherUKnowledge
Source SetsUniversity of Kentucky
Detected LanguageEnglish
Typetext
Formatapplication/pdf
SourceTheses and Dissertations--Electrical and Computer Engineering

Page generated in 0.0016 seconds