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Study of stress measurement using polariscope

The goal of this research was to investigate an experimental infrared transmission technique to extract the full stress components of the in-plane residual stresses in thin multi crystalline silicon wafer, and try to meet the need of photovoltaic industry to in situ measure residual stress for large cast wafers.

Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/34762
Date18 May 2010
CreatorsLi, Fang
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation

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