Indiana University-Purdue University Indianapolis (IUPUI) / In this thesis, we investigated the 7 nm FinFET technology for its delay-power product performance. In our study, we explored the ASAP7 library from Arizona State University, developed in collaboration with ARM Holdings. The FinFET technology was chosen since it has a subthreshold slope of 60mV/decade that enables cells to function at 0.7V supply voltage at the nominal corner. An emphasis was focused on characterizing the Non-Ideal effects, delay variation, and power for the FinFET device. An exhaustive analysis of the INVx1 delay variation for different operating conditions was also included, to assess the robustness.
The 7nm FinFET device was then employed into 6T SRAM cells and 16 function ALU. The SRAM cells were approached with advanced multi-corner stability evaluation. The system-level architecture of the ALU has demonstrated an ultra-low power system operating at 1 GHz clock frequency.
| Identifer | oai:union.ndltd.org:IUPUI/oai:scholarworks.iupui.edu:1805/24772 |
| Date | 12 1900 |
| Creators | Yadav, Avinash |
| Contributors | Rizkalla, Maher E., Ytterdal, Trond, Lee, John J. |
| Source Sets | Indiana University-Purdue University Indianapolis |
| Language | English |
| Detected Language | English |
| Type | Thesis |
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