In this study, detailed characteristics and performance assessment of 3& / #8722 / 5
µ / m p-i-n InSb photodetectors on Si substrates are reported. The detector epilayers were grown on GaAs coated Si substrates by molecular beam apitaxy (MBE). Both homojunction and single heterojunction (AlInSb/InSb) detector structures were investigated. Arrays of 33x33 µ / m2 detectors were fabricated and flip-chip bonded to a test substrate for detailed electrical and optical characterization. A peak detectivity as high as 1x1010 cmHz1/2/W was achieved with InSb homojunction
detectors on Si substrate in spite of the large lattice mismatch between InSb and Si (%19). In both homojunction and single heterojunction structures the differential resistance is significantly degraded by trap assisted tunneling (TAT) under moderately large reverse bias and by ohmic leakage near zero-bias. While the heterojunction structures provide a higher 80 K zero bias differential resistance, the
responsivity of this structure is significantly lower than that of homojunction InSb photodiodes. In both homojunction and heterojunction photodetectors, 80K 1/f noise is dominated by TAT processes, and the noise current at 1 Hz follows the
empirical relation in= & / #945 / TAT(ITAT) & / #946 / with & / #945 / TAT& / #8764 / 1.1x10& / #8211 / 6 and & / #946 / & / #8764 / 0.53.
| Identifer | oai:union.ndltd.org:METU/oai:etd.lib.metu.edu.tr:http://etd.lib.metu.edu.tr/upload/756403/index.pdf |
| Date | 01 January 2003 |
| Creators | Tumkaya, Umid |
| Contributors | Besikci, Cengiz |
| Publisher | METU |
| Source Sets | Middle East Technical Univ. |
| Language | English |
| Detected Language | English |
| Type | Graduate School of Natural and Applied Sciences : Physics Thesis |
| Format | text/pdf |
| Rights | To liberate the content for public access |
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