• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 14
  • 1
  • 1
  • Tagged with
  • 19
  • 19
  • 19
  • 8
  • 5
  • 5
  • 4
  • 4
  • 4
  • 4
  • 3
  • 3
  • 3
  • 3
  • 3
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Performance Assesment Of Indium Antimonide Photodetectors On Silicon Substrates

Tumkaya, Umid 01 January 2003 (has links) (PDF)
In this study, detailed characteristics and performance assessment of 3&amp / #8722 / 5 &micro / m p-i-n InSb photodetectors on Si substrates are reported. The detector epilayers were grown on GaAs coated Si substrates by molecular beam apitaxy (MBE). Both homojunction and single heterojunction (AlInSb/InSb) detector structures were investigated. Arrays of 33x33 &micro / m2 detectors were fabricated and flip-chip bonded to a test substrate for detailed electrical and optical characterization. A peak detectivity as high as 1x1010 cmHz1/2/W was achieved with InSb homojunction detectors on Si substrate in spite of the large lattice mismatch between InSb and Si (%19). In both homojunction and single heterojunction structures the differential resistance is significantly degraded by trap assisted tunneling (TAT) under moderately large reverse bias and by ohmic leakage near zero-bias. While the heterojunction structures provide a higher 80 K zero bias differential resistance, the responsivity of this structure is significantly lower than that of homojunction InSb photodiodes. In both homojunction and heterojunction photodetectors, 80K 1/f noise is dominated by TAT processes, and the noise current at 1 Hz follows the empirical relation in= &amp / #945 / TAT(ITAT) &amp / #946 / with &amp / #945 / TAT&amp / #8764 / 1.1x10&amp / #8211 / 6 and &amp / #946 / &amp / #8764 / 0.53.
2

Ensemble Monte-carlo Simulation Of Quantum Well Infrared Photodetectors, And Inp Based Long Wavelength Quantum Well Infrared Photodetectors For Thermal Imaging

Cellek, Oray Orkun 01 September 2006 (has links) (PDF)
Quantum well infrared photodetectors (QWIP) utilize quantum wells of large bandgap materials to detect infrared radiation. When compared to conventional low bandgap LWIR photodetectors, the QWIP technology offers largest format thermal imagers with much better uniformity. The theoretical part of this study includes the development of a QWIP ensemble Monte-Carlo simulator. Capture paths of electrons to quantum wells are simulated in detail. For standard AlGaAs/GaAs QWIPs, at medium and high E-fields L valley quantum well (QW) is a trap for electrons which causes higher capture probability when compared with InP/InGaAs and GaAs/InGaAs QWIPs. The results suggest that high photoconductive gain observed in InP/InGaAs and GaAs/InGaAs QWIPs is not due to good transport properties of binary barrier material but due to higher &amp / #61511 / -L valley energy separation. The experimental part of the study includes the fabrication and characterization of InP/InGaAs and InP/InGaAsP QWIPs and 640x512 FPAs with the main objective of investigating the feasibility of these material systems for QWIPs. The InP/InGaAs and InP/InGaAsP QWIP detectors showed specific detectivity values above 1010 cm.Hz1/2/W (70K, f/2, background limited). The devices offer higher allowable system noise floor when compared with the standard AlGaAs/GaAs QWIP technology. It is also experimentally shown that for strategic applications LWIR InP based QWIPs have advantages over the standard QWIP technology. The InP/InGaAs 640x512 QWIP FPA reached 36 mK average NETD value at 70 K with f/1.5 optics and 10 ms integration time. The InP/InGaAsP QWIP on the other hand yielded 38 mK NETD histogram peak at 70 K with f/1.5 optics and 5 ms integration time on 320x256 window of the 640x512 FPA.
3

The effect of mutual coupling on the noise performance of large antenna arrays

Van der Merwe, Jacki 03 1900 (has links)
Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010. / ENGLISH ABSTRACT: Worldwide, more large antenna arrays are being deployed in areas of science previously dominated by other antenna geometries. Applications for large arrays include Radar, Satellite Communications and Radio Astronomy. Even though the use of large arrays solve some of the difficulties posed by more traditional antennas, new challenges are also faced. One of these challenges is the problem of noise coupling, and how the overall system performance is affected by it. The Focal Plane Array (FPA), which is a new example of a large antenna array, is currently being researched at a number of institutions worldwide for use in Radio Astronomy. As a result, FPA’s were used as an example element to demonstrate the practical importance of this research. In this study, the effect of mutual coupling on the noise performance of FPA’s was illustrated. This was done by calculating the mutual coupling between the elements of the array, and then calculating the noise power received by each element as a result of the mutual coupling. Next, the Active Noise Figure and Active Noise Temperature were calculated. These parameters were introduced to visualise the effect of mutual coupling on the overall noise performance of the array. Since FPA’s are by definition large, conventional brute-force analysis techniques are very resource intensive. Solving the coupling terms using these methods therefore requires the use of computer clusters even during the design phase of the antenna, which is very expensive. A method was therefore developed to calculate the coupling terms of a large array using Periodic Boundary Conditions. The method uses infinite array analysis, which resulted in an improvement in memory usage in orders of magnitude. This improvement comfortably places the memory requirements for the analysis of large arrays within the range of current personal computers. The results also displayed a reasonable amount of accuracy for use during the design phase of an array. The additional noise power on each element as a result of mutual coupling were also calculated. This was achieved by developing an equivalent circuit diagram that represents the system in terms of the noise and transmission parameters of the LNA of each receiver channel, and the coupling terms of the antenna array. Lastly, the active noise temperature and active noise figure are calculated. The theory was implemented by means of a script with a graphical user interface, to provide easy-to-use access to the theory. A quick reference table of estimated noise coupling penalty versus first term coupling and LNA noise temperature was also compiled. The results of an example calculation showed a significant amount of noise coupling in an 8×8 Vivaldi array. The noise coupling resulted in an increase in system noise temperature, Tsys, in the order of 9% of the LNA noise temperature, TLNA. According to the SKA Tsys budget, this results in an approximate Tsys increase of 1.3 Kelvin. In the context of Radio Astronomy, this additional source of noise cannot be ignored, as it can greatly affect the usebility of the telescope for certain areas of research. / AFRIKAANSE OPSOMMING: Groot antennaskikkings word deesdae al hoe meer ingespan in plek van ander tradisionele antennamodelle. Toepassings vir groot antennaskikkings sluit Radar, Satellietkommunikasie en Radioastronomie in. Alhoewel die gebruik van groot antennaskikkings baie van die probleme wat deur ander tradisionele antennamodelle veroorsaak word oplos, word nuwe uitdagings terselfdertyd geskep. Een van hierdie nuwe uitdagins is ruiskoppelling en hoe dit die ruisgedrag van die stelsel as ’n geheel affekteer. ’n Beeldvlakskikking (FPA), is ’n opwindende nuwe voorbeeld van ’n groot antennaskikking en die moontlikheid vir die gebruik daarvan in radioastronomie word tans wêreldwyd nagevors. Om hierdie rede is die FPA gekies as voorbeeldelement om die bruikbaarheid van hierdie navorsing in die praktyk te beklemtoon. In hierdie studie word die effek van wedersydse koppelling op die ruisgedrag van FPA’s geïllustreer. Dit word gedoen deur eers die wedersydse koppelling tussen die elemente van die antennaskikking te bereken en dan die ruisdrywing wat deur elke element ontvang word as gevolg van wedersydse koppelling. Daarna word die Aktiewe Ruistal en die Aktiewe Ruistemperatuur bereken. Hierdie nuwe parameters word bekendgestel om die gevolge van wedersydse koppelling op die ruisgedrag van die stelsel as ’n geheel te visualiseer. Omdat FPA’s per definisie groot is, vereis die analise daarvan deur middel van konvensionele metodes baie rekenaar hulpbronne. Hierdie metodes vereis dus die gebruik van rekenaarbondels of superrekenaars selfs gedurende die ontwerpfase van die antenna, wat baie duur en onprakties is. Daar is dus ’n metode ontwikkel wat gebruik maak van periodiese randvoorwaardes om groot antennaskikkings te analiseer. Die metode benader ’n groot antennaskikking as ’n eindig-opgewekte oneindige skikking van antennas. As gevolg hiervan, word die geheueverbruik met ordegroottes verbeter. Hierdie verbetering plaas dus die analise van groot antennaskikkings binne die vermoëns van huidige persoonlike rekenaars. Die resultate wys ook ’n aanvaarbare graad van akkuraatheid vir gebruik gedurende die ontwerpfase van die skikking. Die bykomende ruisdrwying op elke element as gevolg van wedersydse koppelling is ook bereken. Om dit te vermag, is daar ’n ekwivalente stroombaandiagram ontwikkel wat die gekoppelde stelsel in terme van die ruis- en transmissieparameters van die laeruisversterker (LNA) aan elke ontvangerkanaal en die koppelterme van die antenna skikking voorstel. Laastens word die aktiewe ruistal en die aktiewe ruistermperatuur ook bereken. Die teorie is geïmplimenteer deur gebruik te maak van ’n grafiesegebruikerskoppelvlak (GUI). Die GUI verskaf aan die gebruiker maklike toegang tot die teorie wat onwikkel is in hierdie navorsing. Daar is ook ’n snelnaslaantabel geskep met benaderde waardes van ruiskoppelling vir ’n verskeidenheid waardes van LNA ruistemperature en eerste element koppelling. Die resultate van ’n 8×8 Vivaldiskikking voorbeeld, het ’n beduidende hoeveelheid ruiskoppelling getoon. Die ruiskoppelling het ’n maksimum toename in stelsel ruistemperatuur, Tsys, van ongeveer 9% van die LNA ruistemperatuur tot gevolg gehad. Volgens die huidige Tsys begroting van die SKA, kom dit neer op ’n Tsys toename van byna 1.3 Kelvin. In die konteks van die radioastronomie, kan hierdie toename in ruistemperatuur nie geïgnoreer word nie aangesien dit die bruikbaarheid van die teleskoop vir sekere velde van navorsing nadelig kan beïnvloed.
4

Patterned Liquid Crystal Polymer Retarders, Polarizers, and Sources

Myhre, Graham January 2012 (has links)
Liquid crystals are traditionally aligned via a rubbed substrate. The rubbing creates anisotropic defects and strain in the material which provide an energetically favorable orientation for the liquid crystal (LC). This is a well-developed technology that is used in virtually all liquid crystal displays (LCDs). However, it is only capable of uniform alignment on a large planar substrate. This work utilizes a new class of photoalignment materials (PM) that replace the traditional buffing technique. PMs allow for patterned LC alignment using polarized photo-lithography. Further, instead of using a nematic liquid crystal, a UV curable liquid crystal polymer (LCP) is coated on this patterned alignment material. This generates a cured, aligned, and patterned thin film that has retardance and diattenuation if a dichroic dye is incorporated in the LCP. Using these materials and methods, retarders, polarizers, and polarized fluorescent sources are fabricated with dimensions as small as a few microns. In addition to exploring the material and processing properties of the PM and LCP system, arrays of micropolarizer are fabricated for the construction of a prototype polarization camera, termed an imaging polarimeter. An imaging polarimeter is a device that measures not only the intensity but also the polarization state of a light field. My imaging polarimeter design incorporates a patterned LCP polarizer focal plane array (FPA) that is aligned and mounted to a charge-couple-device (CCD) image sensor. A polarizer FPA allows an individual pixel on a CCD sensor to detect a unique polarization state, such as a specific linear polarization orientation or right or left handed circular polarization. Neighboring pixels are designed to detect different states and each cluster can then estimate the incident polarization state. Results of a linear LCP polarimeter operating in the visible spectrum are presented.
5

A 230 GHz focal plane array using a wide IF bandwidth SIS receiver

Garrett, John January 2018 (has links)
Superconductor-Insulator-Superconductor (SIS) mixers offer the best noise properties of any heterodyne mixing technique at millimetre wavelengths. In astronomy, they are used for sensitive spectroscopy, which is vital for understanding the properties of the cold interstellar medium, including regions of star formation activity. Modern SIS receivers have noise properties that are ∼3 times the quantum limit, and it is now becoming increasingly difficult to lower the noise properties any further. In this thesis, I investigate two techniques that extend the capability of SIS receivers. The first technique is extending the instantaneous bandwidth of the receivers, i.e., the intermediate frequency bandwidth (IFBW). For spectral line sources, wide IFBW expands the survey depth to allow multiple emission lines to be observed simultaneously. Here, I present a new SIS mixer device at 230 GHz. The planar circuit was minimised to reduce any parasitic capacitances that may limit the IFBW. Experimentally, the device provides excellent noise temperatures down to 36 K and an IFBW extending from approximately 0-11 GHz. Simulation software was developed to better understand the performance of this device, and it suggests that the IFBW can be extended to higher frequencies if the IF measurement chain is upgraded. The second technique that I investigate is increasing the number of receivers in the focal plane of the receiver, i.e., adding more pixels. There are many challenges involved in this task including how to fit multiple receivers into a small space, how to properly cool the receiver, and how to deliver the local-oscillator signal. Here, I present a new 1 × 4 focal plane array. This array is acting as a demonstrator for a new array architecture that can be expanded into many more pixels in the future. It uses cascaded waveguide power splitters to divide the local-oscillator signal, and then waveguide directional couplers to combine the LO with the astronomical signals. Finally, I present CO(J=1→0) measurements from 34 galaxies in the 5MUSES survey. These measurements trace the amount of cold molecular gas present in these galaxies. By comparing these measurements to other metrics that trace star formation activity (e.g., infrared luminosity), I was able to form empirical relationships between the observed quantities. I also combined these results with other star formation studies from nearby and high redshift galaxies to form scaling relationships spanning a large fraction of cosmic time.
6

Noise Analysis and Simulation of a Sub-Pixel Analog to Digital Voltage-To-Frequency Converter for use with IR Focal Plane Arrays

Colonero, Curtis Benson 09 January 2007 (has links)
The performance of a dedicated A/D converter located beneath each pixel is explored in this thesis. Specifically, a voltage to frequency converter coupled with a direct injection amplifier designed for use with an IR focal plane array is analyzed. This versatile implementation of a Readout Integrated Circuit can be found applicable to a wide variety of imaging technologies. Noise performance of the conversion system is theoretically calculated, and is supported by SPICE simulations using valid CMOS SPICE models. It is shown that a 10 transistor sub-pixel voltage to frequency analog to digital converter will produce noise that is less than the input shot noise. Design considerations will be addressed to ensure continued performance as the scale of the imagers increase to large format arrays.
7

Ensemble Monte Carlo Simulation Of Quantum Well Infrared Photodetectors, And Inp Based Long Wavelength Quantum Well Infrared Photodetectors For Thermal Imaging

Cellek, Oray Orkun 01 September 2006 (has links) (PDF)
Quantum well infrared photodetectors (QWIP) utilize quantum wells of large bandgap materials to detect infrared radiation. When compared to conventional low bandgap LWIR photodetectors, the QWIP technology offers largest format thermal imagers with much better uniformity. The theoretical part of this study includes the development of a QWIP ensemble Monte Carlo simulator. Capture paths of electrons to quantum wells are simulated in detail. For standard AlGaAs/GaAs QWIPs, at medium and high E-fields L valley quantum well (QW) is a trap for electrons which causes higher capture probability when compared with InP/InGaAs and GaAs/InGaAs QWIPs. The results suggest that high photoconductive gain observed in InP/InGaAs and GaAs/InGaAs QWIPs is not due to good transport properties of binary barrier material but due to higher &amp / #61511 / -L valley energy separation. The experimental part of the study includes the fabrication and characterization of InP/InGaAs and InP/InGaAsP QWIPs and 640x512 FPAs with the main objective of investigating the feasibility of these material systems for QWIPs. The InP/InGaAs and InP/InGaAsP QWIP detectors showed specific detectivity values above 1x1010 cm.Hz1/2/W (70K, f/2, background limited). The devices offer higher allowable system noise floor when compared with the standard AlGaAs/GaAs QWIP technology. It is also experimentally shown that for strategic applications LWIR InP based QWIPs have advantages over the standard QWIP technology. The InP/InGaAs 640x512 QWIP FPA reached 36 mK average NETD value at 70 K with f/1.5 optics and 10 ms integration time. The InP/InGaAsP QWIP on the other hand yielded 38 mK NETD histogram peak at 70 K with f/1.5 optics and 5 ms integration time on 320x256 window of the 640x512 FPA.
8

Insb And Inassb Infrared Photodiodes On Alternative Substrates And Inp/ingaas Quantum Well Infrared Photodetectors: Pixel And Focal Plane Array Performance

Ozer, Selcuk 01 June 2005 (has links) (PDF)
InAsxSb1-x (Indium Arsenide Antimonide) is an important low bandgap semiconductor whose high quality growth on GaAs or Si substrates is indispensible for low cost, large format infrared focal plane arrays (FPAs). Quantum well infrared photodetector (QWIP) technology, relying on mature semiconductors, is also promising for the above purpose. While AlGaAs/GaAs has been the standard material system for QWIPs, the search for alternative materials is needed for better performance. This thesis reports a detailed investigation of molecular beam epitaxy grown mid-wavelength infrared InAsxSb1-x photodiodes on alternative substrates, and long wavelength infrared InP/InGaAs QWIPs. In the first part of the study, InSb and InAs0.8Sb0.2 photodiodes grown on Si and GaAs substrates are investigated to reveal the performance degrading mechanisms due to large lattice mismatch. InAs0.8Sb0.2/GaAs photodiodes yield peak detectivities of 1.4&times / 1010 and 7.5&times / 108 cmHz&frac12 / /W at 77 K and 240 K, respectively, showing that the alloy is promising for both cooled and near room temperature detectors. Under moderate reverse bias, 80 K RoA product limiting mechanism is trap assisted tunneling, which introduces considerable 1/f noise. InSb/Si photodiodes display peak 77 K detectivity as high as ~1&times / 1010 cmHz 1/2/W and reasonably high peak quantum efficiency in spite of large lattice mismatch. RoA product of detectors at 80 K is limited by Ohmic leakage with small activation energy (25 meV). Bias and temperature dependence of 1/f noise is in reasonable agreement with Kleinpenning&rsquo / s mobility fluctuation model, confirming the validity of this approach. The second part of the study concentrates on InP/In0.53Ga0.47As QWIPs, and 640&times / 512 FPA, which to our knowledge, is the largest format InP/InGaAs QWIP FPA reported. InP/InGaAs QWIPs yield quantum efficiency-gain product as high as 0.46 under moderate bias. At 70 K, detector performance is background limited with f/2 aperture up to ~3 V bias where peak responsivity (2.9 A/W) is thirty times higher than that of the Al0.275Ga0.725As/GaAs QWIP with similar spectral response. Impact ionization in InP/InGaAs QWIPs does not start until the average electric-field reaches 25 kV/cm, maintaining high detectivity under moderate bias. The 640&times / 512 InP/InGaAs QWIP FPA yields noise equivalent temperature difference of ~40 mK at an FPA temperature as high as 77 K and reasonably low NETD even with short integration times (t). 70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under &ndash / 0.5 V (t=11 ms) and &ndash / 2 V (t=650 Rs) bias, respectively. The results clearly show the potential of InP/InGaAs QWIPs for thermal imaging applications requiring short integration times. Keywords: Cooled infrared detectors, InAsSb, QWIP, focal plane array.
9

Long Wavelength Mercury Cadmium Telluride Photodiodes And Focal Plane Arrays

Asici, Burak 01 September 2005 (has links) (PDF)
This thesis reports the fabrication and characterization of long wavelength infrared mercury cadmium telluride (Hg1-xCdxTe) photodiodes and 128x128 focal plane arrays grown on lattice matched cadmium zinc telluride (Cd1-yZnyTe) substrates by metal organic vapor phase epitaxy (MOVPE). The dark current modeling of 33x33 mm2 Hg1-xCdxTe photodiodes has shown the dark current is dominated by trap assisted tunneling under small reverse bias voltages typically used to bias these detectors. The dominant dark current mechanisms under high reverse bias and low forward bias are band&ndash / to&ndash / band tunneling and generation&ndash / recombination, respectively. The photodiodes have yielded a peak 77 K detectivity of 3.2x1010 cm&amp / #8730 / Hz/W with a cut-off wavelength (50%) of 10.92 mm. It has also been found that the 1/f noise current of the detectors at 1 Hz is related to the trap-assisted tunneling current through the empirical relation in=&amp / #945 / TAT(ITAT)&amp / #946 / with &amp / #945 / TAT=7.0 x 10-5 and &amp / #946 / =0.65. In the course of the focal plane array (FPA) fabrication process development work, ohmic contact formation on p-type Hg1-xCdxTe and mesa wet etch were studied in detail. Contacts with chromium, gold, platinum and copper on p-type Hg1-xCdxTe resulted in bad ohmic contacts, which did not seem to improve with annealing. On the other hand a HgTe cap layer on p-type Hg1-xCdxTe resulted in good ohmic contact with acceptably low resistance. Among the etchants studied for mesa etching of the diode structures, Br2/HBr solution yielded the best performance. After developing all of the steps of FPA processing, 128x128 Hg1-xCdxTe FPAs were successfully fabricated and tested in a thermal imager. While thermal imaging was performed with the FPAs, high nonuniformity of the material and low R0A product of the pixels did not allow high sensitivity imaging.
10

Silicon-Based Infrared Photodetectors for Low-Cost Imaging Applications

Duran, Joshua 30 May 2019 (has links)
No description available.

Page generated in 0.0618 seconds