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Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells

The hot carrier dynamics of Zn0.91Cd0.09Se/ZnSe multi-quantum wells were studied using the femtosecond time-resolved photoluminescence upconversion technique. The carrier cooling behavior was investigated for different compositions at various lattice temperatures. The hot carriers generated photoexcitation by 405nm Ti:sapphire laser pulses release their excess energy primarily through carrier-LO-phonon interaction. As the excess energy reduce to the amount that lower than the energy of LO phonon, the excess energy was released by carrier-TA-phonon scattering before radiative recombination occurs. We have determined the scattering times of carrier-LO-phonon scattering at different lattice temperatures. No hot phonon effects was found at low photoexcited carrier density. The dependence of photoluminescence lifetime on wavelength was also discussed.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0714104-171109
Date14 July 2004
CreatorsChung, Yung-Hsien
ContributorsI-Min Jiang, Jih-Chen Chiang, Der-Jun Jang, Li-Wei Tu, Chie-Tong Kuo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714104-171109
Rightsunrestricted, Copyright information available at source archive

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