SiO2 solutions were prepared from tetraethylortho-silicate (TEOS) by using the sol-gel process to fabricate dielectric materials of the insulator.
We weighed different weight of TEOS in the solution and looked for the suitable conditions which easily fabricate the thin film.
Then, we tried to add organic dispersants ( Octyl Phenol Ethoxylate ) in the SiO2 solution for the purpose of making molecules dispersed in the solution uniformly. After being a membrane, it could improve the roughness to make it more smooth. We used AFM to measure the root-mean square (RMS). The purpose of measurement was less than 1nm. Then we used these materials to make metal-insulator-metal (MIM) structures. And the measurement showed the leakage current was 10 times less than that without adding it in the solution.
After that, we applied the thin film to the insulator of the thin film transistor (TFT). Pentacene of the semiconductor layer was thermally deposited and the thickness was about 50nm. Because the interface between the insulator and the semiconductor could change the arrangement of Pentacene, so we used O2 plasma to improve the interface. The process could make the molecules arrange regularly and influence the carrier mobility, and that can let us get the characteristic of the TFT.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0715109-172317 |
| Date | 15 July 2009 |
| Creators | Peng, Yong-Fu |
| Contributors | Yu-Kai Ha, Ann-Kuo Chu, Ping-Tsung Huang, Hsin-Lung Chen, Wen-Yao Huang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715109-172317 |
| Rights | withheld, Copyright information available at source archive |
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