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No description available.

SiO2 solutions were prepared from tetraethylortho-silicate (TEOS) by using the sol-gel process to fabricate dielectric materials of the insulator. We weighed different weight of TEOS in the solution and looked for the suitable conditions which easily fabricate the thin film. Then, we tried to add organic dispersants ( Octyl Phenol Ethoxylate ) in the SiO2 solution for the purpose of making molecules dispersed in the solution uniformly. After being a membrane, it could improve the roughness to make it more smooth. We used AFM to measure the root-mean square (RMS). The purpose of measurement was less than 1nm. Then we used these materials to make metal-insulator-metal (MIM) structures. And the measurement showed the leakage current was 10 times less than that without adding it in the solution. After that, we applied the thin film to the insulator of the thin film transistor (TFT). Pentacene of the semiconductor layer was thermally deposited and the thickness was about 50nm. Because the interface between the insulator and the semiconductor could change the arrangement of Pentacene, so we used O2 plasma to improve the interface. The process could make the molecules arrange regularly and influence the carrier mobility, and that can let us get the characteristic of the TFT.

Thesis (Ph. D.)--Lehigh University, 2001. / Includes vita. Includes bibliographical references (leaves 118-130).

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Langmuir-Blodgett (LB) films have previously been used as organic insulating layers in compound semiconductor metal-insulator- semiconductor devices, with promising preliminary results. This thesis describes the first investigation of the use of LB films In gallium arsenide metal-insulator-semiconductor devices. Diodes incorporating thin layers of w-tricosenoic acid or substituted copper phthalocyanine possessed 'leaky' electrical characteristics, i.e. there is some conduction through the LB film. This 'leaky' behaviour was exploited to produce the first metal- Insulator-semiconductor-switch (MISS) incorporating an LB film. MISS devices on n-p(^+) GaAs were produced with good switching characteristics and a high yield (~90%), using LB film thicknesses between 9 and 33 nm. It was shown that the 'punch through' mechanism was responsible for the switching behaviour. p-n(^+) GaAs/LB film MISS diodes behaved rather differently, with good switching characteristics only found at reduced temperature. Some degradation of the characteristics of LB film MISS devices was noted, although this was reduced by using the more robust phthalocyanlne LB films. Metal-tunnel-insulator-semiconductor diodes were produced on the ternary alloy Ga(_.47)In(_.53)As, using LB film monolayers. The barrier height was apparently larger than that of Schottky barriers on this material, with a very substantial reduction in current density due to tunnelling through the LB film. Using this technique it may be possible to produce very high performance GaInAs fleld-effect-transistors, which are analogous to GaAs metal-semiconductor field effect transistors.

This thesis studies the effects of gas ambients on the electrical properties of the insulator-semiconductor interface of a MIS capacitor. A microcomputer-controlled instrumentation system has been developed to extract this information from measurement of the a.c. admittance of MOS or MIS devices. The system incorporates several novel developments in circuitry and software which enable these admittance data to be automatically collected and processed in the frequency domain by remote recalibration of the instrumentation. This advancement permits interface state density information to be calculated more quickly and accurately than has been previously possible using manually-operated equipment. The system has been used to investigate the influence of gases on the density of interface states in a MIS capacitor, in particular the palladium/silicon dioxide/silicon structure which is sensitive to hydrogen gas. A distinct change in the distribution of surface state density across the silicon bandgap has been observed upon exposure to a hydrogen ambient. An alternative insulating layer, an organic Langmuir-Blodgett film multilayer of ω-tricosenoic acid, has been characterised and examined, and increased sensitivity of this structure to hydrogen gas has been indicated.

Metal-insulator-semiconductors (MIS) are one of the most basic elements in the digital and microwave circuits. Theoretical and experimental investigation has shown that the dominant mode of propagation in MIS is not a quasi-TEM mode at all frequencies. It has been shown that an MIS transmission line is in fact a slow-wave structure in a certain frequency range. Slow-wave structures offer a large effective permittivity, therefore, can be employed to create large propagation delay and to reduce the guided wavelength. These characteristics can be utilized to design compact passive elements such as delay lines, phase shifters and filters. MIS structures can be easily fabricated using the current semiconductor technology. As well, they can be designed to operate in the slow-wave region for implementation of miniaturized passive components. In this thesis, first, an MIS interconnect is designed, fabricated and measured. Then, the transmission line characteristics are extracted from simulated and measured results. Subsequently, the MIS line parameters are used in designing a compact slow-wave meander line structure, which is compatible with silicon-based-packaging (SBP) solutions used in modern system-in-package/system-on-package (SIP/SOP) technologies.

Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.

Thesis (M. Sc.)--University of Alberta, 2010. / Title from pdf file main screen (viewed on July 2, 2010). A thesis submitted to the Faculty of Graduate Studies and Research in partial fulfillment of the requirements for the degree of Master of Science in Materials Engineering, Department of Chemical and Materials Engineering, University of Alberta. Includes bibliographical references.