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Optical detection using four-layer semiconductor structures

The application of a thyristor (a four-layer P1-N1-P2-N2 semiconductor structure) as an optical detector is explored. Based on laboratory experiments which demonstrated that this device produces a pulse-mode output to incident light, the thyristor is investigated by comparing the existing theory of static forward-biased operation to simulation results obtained using ATLAS by Silvaco, Inc. The results include identification of the holding point on the IV curve by simulating the junction potential across each junction as a function of current, and demonstration that impact ionization is not a critical factor in thyristor operation. A series of simulations were performed which show that the thyristor can be optimized for use as a detector by decreasing the emitter efficiencies by decreasing the doping in the P1 and N2 layers, or by increasing the doping in the P2 layer; the switching voltage can be controlled by selecting the doping and thickness of the N1 layer. A detector device was designed to allow further testing of the thyristor detector using the ABN CMOS process from AMI Semiconductor via the MOSIS service. The design of this device is discussed and simulated IV curves are presented.

Identiferoai:union.ndltd.org:nps.edu/oai:calhoun.nps.edu:10945/1893
Date06 1900
CreatorsMoore, David A.
ContributorsKarunasiri, Gamani, Fouts, Douglas, Naval Postgraduate School (U.S.)., Department of Electrical and Computer Engineering
PublisherMonterey California. Naval Postgraduate School
Source SetsNaval Postgraduate School
Detected LanguageEnglish
TypeThesis
Formatxiv, 76 p. : ill. (chiefly col.) ;, application/pdf
RightsApproved for public release, distribution unlimited

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