Spelling suggestions: "subject:"thyristors."" "subject:"thyristor’s.""
1 |
Conception d'un Thyristor 5 kV en carbure de silicium pour assurer la génération d'impulsions de forte énergieArssi, Naji Chante, Jean-Pierre January 2003 (has links)
Thèse de doctorat : Génie électrique : Villeurbanne, INSA : 2002. / Thèse : 2002ISAL0040. Titre provenant de l'écran-titre. Bibliogr. p.176-185.
|
2 |
Un onduleur triphase avec modulation de la largeur des impulsions de sortie/Cayrol, Francois Jean January 1974 (has links)
No description available.
|
3 |
Investigating the electrothermal characteristics of a Gate Turn Off thyristor during turn-off using SILVACO ALTAS [sic] ATLASVineyard, Gerald E. January 2009 (has links) (PDF)
Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, June 2009. / Thesis Advisor(s): Weatherford, Todd R. ; Ciezki, John G. "June 2009." Description based on title screen as viewed on July 14, 2009. Author(s) subject terms: Gate Turn Off thyristor, GTO, pulsed power, current interruption, thermal and electric modeling, inductive turn-off, safe operating area, SOA. Includes bibliographical references (p. 127-128). Also available in print.
|
4 |
Un onduleur triphase avec modulation de la largeur des impulsions de sortie/Cayrol, Francois Jean January 1974 (has links)
No description available.
|
5 |
Novel and conventional gate commutated thyristors : modelling and analysisLophitis, Neophytos January 2014 (has links)
No description available.
|
6 |
Solid state semiconductor supression of the sparking at the brushes of dc machinesSellami, Said January 1993 (has links)
No description available.
|
7 |
Optical detection using four-layer semiconductor structuresMoore, David A. 06 1900 (has links)
The application of a thyristor (a four-layer P1-N1-P2-N2 semiconductor structure) as an optical detector is explored. Based on laboratory experiments which demonstrated that this device produces a pulse-mode output to incident light, the thyristor is investigated by comparing the existing theory of static forward-biased operation to simulation results obtained using ATLAS by Silvaco, Inc. The results include identification of the holding point on the IV curve by simulating the junction potential across each junction as a function of current, and demonstration that impact ionization is not a critical factor in thyristor operation. A series of simulations were performed which show that the thyristor can be optimized for use as a detector by decreasing the emitter efficiencies by decreasing the doping in the P1 and N2 layers, or by increasing the doping in the P2 layer; the switching voltage can be controlled by selecting the doping and thickness of the N1 layer. A detector device was designed to allow further testing of the thyristor detector using the ABN CMOS process from AMI Semiconductor via the MOSIS service. The design of this device is discussed and simulated IV curves are presented.
|
8 |
The control of H.V.D.C. convertors using the sample-and-delay method.Cheung, Wood-nang. January 1971 (has links)
Thesis--Ph. D., University of Hong Kong. / Mimeographed.
|
9 |
The use of triacs in 3-phase to 3-phase cycloconverters.Cornish, Leonard Southward, January 1977 (has links)
Thesis--M. Phil., University of Hong Kong, 1978.
|
10 |
The use of triacs in 3-phase to 3-phase cycloconvertersCornish, Leonard Southward January 1977 (has links)
published_or_final_version / Electrical Engineering / Master / Master of Philosophy
|
Page generated in 0.0424 seconds