Abstract Integrated optical (IO) sensor allowing sensitive, label-free, real-time and multi-parameter monitoring of bio-molecular interactions are conventionally fabricated with inorganic dielectrics inherited from CMOS manufacturing technology. Polymers as complement materials to inorganic dielectrics are becoming to have an increasing market share for IO circuits in optical communications networks owing to its good optical properties, versatile processibility and low cost. This work aims at developing disposable low-cost biosensors based mainly on polymeric materials, with a performance comparable to inorganic-dielectric based IO biosensors. This thesis describes the development of polymer IO biosensors based on the Young interferometer (YI) transducer platform for ambient noise compensation and a complete periodic intensity fringe pattern. Three different waveguide configurations were utilized, taking into consideration operational simplicity, fabrication simplicity and enhanced sensitivity. Among the developed polymer biosensors, an unconventional interferometer structure: a vertically placed dual-slab waveguide interferometer and an inverted rib waveguide configuration were employed. To enhance the sensitivity of the waveguides, deposition of Ta2O5 high index coating was performed on the rib waveguide configuration. Along with the development of polymer biosensors based on the inverted-rib waveguide configuration, a fabrication process was also developed featuring UV-imprinting and spin coating. The simple two-step fabrication process demonstrated using a polymer mold is potentially transferable to the roll-to-roll manufacture process. Calibration of the developed sensors was performed by homogeneous refractive index (RI) sensing with glucose de-ionized water solutions. By investigating an antibody – antigen binding interaction involving C-reactive protein and its conjugates, this thesis confirmed the applicability of the developed sensors to specific molecule detection. Moreover, to establish the influence of water molecular absorption on measurement stability, an evaluation was carried out on the polymeric waveguide. Finally, the thesis presented a comparison between the developed sensors, exploring their sensitivities, stabilities, limits of detection (LODs) and other aspects related to operation and fabrication. The results indicated that the Ta2O5-coated polymer waveguide sensor had a high sensing capability. In homogeneous RI sensing, the achieved detection limits were 9×10-7 RIU (refractive index unit), i.e., three times the noise level, and 270 fg/mm2 for surface mass density. / Tiivistelmä Integroidulla optiikalla toteutetut anturit mahdollistavat biomolekulaarisen vuorovaikutuksen tutkimisen käyttäen herkkiä moniparametrisia ja merkkiaineettomia menetelmiä. Näiden bioantureiden valmistukseen käytetään tavallisesti CMOS-teknologian piiristä tuttuja epäorgaanisia puolijohteita ja eristemateriaaleja. Viime aikoina on kuitenkin polymeeristen materiaalien käyttöä integroidussa optiikassa tutkittu merkittävästi johtuen polymeerien hyvistä optisista ominaisuuksista, monipuolisesta työstettävyydestä ja edullisista kustannuksista. Tämän työn tarkoituksena on kehittää edullisia, kertakäyttöisiä, pääasiallisesti polymeerisistä materiaaleista valmistettuja bioantureita, jotka vastaavat suorituskyvyltään epäorgaanisista materiaaleista valmistettuja integroidun optiikan antureita. Tässä työssä kehitetyt polymeeriset integroidun optiikan bioanturit perustuvat Youngin interferometriin mahdollistaen ympäristökohinan kompensoinnin ja ne tuottavat pintavuorovaikutusten tutkimiseen jaksoittaisen interferenssikuvion. Työssä hyödynnettiin kolmea erilaista valokanavarakennetta huomioiden niiden käytön helppous, valmistuksen yksinkertaisuus ja mittausherkkyys. Yksi kehitetyistä polymeerisistä bioantureista koostui päällekkäisistä kerrostetuista polymeerikerroksista. Toisen tutkitun rakenteen toiminta puolestaan perustui käänteiseen harjannevalokanavaan. Mittausherkkyyttä parannettiin pinnoittamalla polymeerirakenne Ta2O5-pinnoitteella. Näin muodostui kerrostettu komposiittivalokanava, joka oli tässä työssä tutkittu kolmas sensorirakenne. Itse bioanturien lisäksi kehitettiin myös valmistusprosessi, jossa hyödynnettiin UV-painatusta ja nestefaasipinnoitusta. Tässä työssä havaittiin lisäksi, että kehitetty yksinkertainen valmistusmenetelmä on paitsi toimiva, myös mahdollisesti siirrettävissä rullalta rullalle valmistus- ja tuotantoteknologiaan. Kehitettyjen anturien kalibrointi suoritettiin homogeenisella taitekerroinmittauksella käyttäen liuoksia, jotka valmistettiin glukoosista ja deionisoidusta vedestä. Kehitettyjen anturien soveltuvuus spesifien molekyylien tunnistamista varten todennettiin tutkimalla vasta-aineiden ja antigeenien sitoutumisreaktioita ja vuorovaikutusta C-reaktiivisella proteiinilla ja sen konjugaateilla. Lisäksi työssä tutkittiin veden absorption vaikutusta mittauksen stabiilisuuteen. Tutkimuksessa suoritettiin vertailu kehitettyjen anturien ja niiden ominaisuuksien välillä kiinnittäen huomiota mittausherkkyyteen, stabiilisuuteen, määritys- ja toteamisrajoihin ja muihin anturien valmistukseen sekä käyttöön liittyviin keskeisiin piirteisiin. Tulokset osoittavat, että Ta2O5-pinnoitetun polymeerivalokanavan mittausherkkyys oli suurin vertailluista rakenteista. Homogeenisessä taitekerroinmittauksessa saavutettu määritys- ja toteamisraja oli 9×10-7 taitekerroinyksikköä (RIU). Pintamassatiheysmittauksessa saavuttu tulos oli 270 fg/mm2.

The decrease in thermal decomposition temperature led to the amorphization of RuO2, and nano RuO2 particles were uniformly dispersed in amorphous Ta2O5 matrix. Such nano particles induced the increase in effective surface area for oxygen evolution and change in rate determining step, resulting in a significant decrease in oxygen overpotential. This excellent achievement induced a significant decrease in cell voltage of 0.7 V compared to lead alloy anodes and a voltage reduction of 37 % was achieved for copper electrowinning. Another distinct feature of the amorphous anodes is that nano RuO2 particles increase the overpotential of the unwanted side reaction on the anode, so that the anodic deposition of PbO2 can be completely inhibited. Therefore, the amorphous RuO2-Ta2O5/Ti anodes developed in this thesis have a high possibility to improve the purity of electrowon metal, reduce the maintenance of electrolysis process, prolong the lifetime of the anode, and make a low impact to environment. / 博士(工学) / Doctor of Philosophy in Engineering / 同志社大学 / Doshisha University

<p>Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO₂, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta₂O₅, zirconium oxide, ZrO₂ and hafnium oxide, HfO₂.</p><p>This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta₂O₅, ZrO₂ and HfO₂ using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition.</p><p>All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al₂O₃(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO₂ deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.</p>

Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. This thesis describes new chemical vapour deposition (CVD) and atomic layer deposition (ALD) processes for deposition of Ta2O5, ZrO2 and HfO2 using the metal iodides as starting materials. The layer-by-layer growth in ALD was also studied in real time with a quartz crystal microbalance (QCM) to examine the process characteristics and to find suitable parameters for film deposition. All the processes presented here produced high-purity films at low deposition temperatures. It was also found that films deposited on Pt substrates generally crystallise at lower temperature, or with lower thickness, than on silicon and single-crystalline oxide substrates. Films grown on MgO(001) and α-Al2O3(001) substrates were strongly textured or epitaxial. For example, monoclinic HfO2 deposited on MgO(001) were epitaxial for deposition temperatures of 400-500 C in ALD and 500-600 C in CVD. Electrical characterisation showed that the crystallinity of the films had a strong effect on the dielectric constant, except in cases of very thin films, where the dielectric constant was more dependent on layer thickness.

<p>Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. Since the future goes towards the nanometre scale there is an increasing demand for thin film deposition processes that can produce high quality metal oxide films in this scale with high accuracy.</p><p>This thesis describes atomic layer deposition of Ta₂O₅, HfO₂ and SnO₂ thin films and chemical vapour deposition of SnO₂ thin films. The films have been deposited by employing metal iodides and oxygen as precursors. All these processes have been characterised with regards to important processing parameters. The films themselves have been characterised by standard thin film analysing techniques such as x-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy. The chemical and physical properties have been coupled to critical deposition parameters. Furthermore, additional data in the form of electrical and gas sensing properties important to future applications in the field of microelectronics have been examined.</p><p>The results from the investigated processes have shown the power of the metal iodide based atomic layer deposition (ALD) and chemical vapour deposition (CVD) processes in producing high quality metal oxide thin films. Generally no precursor contaminations have been observed. In contrast to metal chloride based processes the metal iodide processes produces films with a higher degree of crystalline quality when it comes to phase purity, roughness and epitaxy. The use of oxygen as oxidising precursor allowed depositions at higher temperatures than normally employed in water based ALD processes and hence a higher growth rate for epitaxial growth was possible.</p>

Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. Since the future goes towards the nanometre scale there is an increasing demand for thin film deposition processes that can produce high quality metal oxide films in this scale with high accuracy. This thesis describes atomic layer deposition of Ta2O5, HfO2 and SnO2 thin films and chemical vapour deposition of SnO2 thin films. The films have been deposited by employing metal iodides and oxygen as precursors. All these processes have been characterised with regards to important processing parameters. The films themselves have been characterised by standard thin film analysing techniques such as x-ray diffraction, scanning electron microscopy, atomic force microscopy and transmission electron microscopy. The chemical and physical properties have been coupled to critical deposition parameters. Furthermore, additional data in the form of electrical and gas sensing properties important to future applications in the field of microelectronics have been examined. The results from the investigated processes have shown the power of the metal iodide based atomic layer deposition (ALD) and chemical vapour deposition (CVD) processes in producing high quality metal oxide thin films. Generally no precursor contaminations have been observed. In contrast to metal chloride based processes the metal iodide processes produces films with a higher degree of crystalline quality when it comes to phase purity, roughness and epitaxy. The use of oxygen as oxidising precursor allowed depositions at higher temperatures than normally employed in water based ALD processes and hence a higher growth rate for epitaxial growth was possible.

The availability of high quality thermodynamic data on solid solutions and compounds present in multicomponent systems assists in optimizing processing parameters for synthesis, and in evaluating stability domains and materials compatibility under different conditions. Several oxide systems of technological interest, for which thermodynamic data was either not available or is inconsistent were selected for study. Thermodynamic properties of phases present in the binary systems Nb-O and Ta-O were measured in the temperature range from 1000 to 1300 K using solid state electrochemical cells based on (Y2O3) ThO2 as the electrolyte. Based on these measurements and more recent data on heat capacity and phase transitions reported in the literature, Gibbs energy of formation for NbO, NbO2, NbO2.422, Nb2O5-x and Ta2O5 were reassessed. Significant improvements in the data for NbO2, Nb2O5 and Ta2O5 are suggested. The pseudo binary system MoO2-TiO2 was investigated because of the inconsistency between the phase diagram and thermodynamic properties of the solid solution reported in the literature. Based on new electrochemical measurements, a new improved phase diagram for the system MoO2-TiO2, incorporating recently discovered monoclinic to tetragonal phase transition in MoO2 at 1533 K, is presented. Isothermal section of the phase diagram for the ternary systems Cr-Rh-O and Ta-Rh-O and thermodynamic properties of ternary oxides CrRhO3 and TaRhO4 were measured for the first time in the temperature range from 900 to 1300 K. Phase relations for these systems have been computed as a function of oxygen potential at fixed temperature and as a function of temperature at selected oxygen partial pressures. Metal-spinel-corundum three-phase equilibrium in the Ni-Al-Cr-O system at 1373 K has been explored because of its relevance to high temperature corrosion of super alloys. The Gibbs energy of mixing of spinel solid solution was derived from the tie-line data and is compared with the values calculated from cation distribution models. An oxygen potential diagram is developed for the decomposition of spinel solid solution to nickel and corundum solid solution at 1373 K under reducing conditions. The high temperature thermodynamic properties of the phases present in quaternary systems Ca-Co-Al-O and Ca-Cu-Ti-O have been measured by solid state electrochemical cells based on stabilized zirconia. Gibbs energies of formation of the quaternary oxides Ca3CoAl4O10 in the temperature range from 1150 to1500 K and CaCu3Ti4O12 in the range from 900 to 1350 K are presented. Chemical potential diagrams have been computed for the system Al2O3-CaO-CoO at 1500 K. The oxygen potential corresponding to the decomposition of the complex perovskite CaCu3Ti4O12 (CCTO) has been calculated as a function of temperature from the emf of the cell. The effect of the oxygen partial pressure on the phase relations in the pseudo-ternary system CaO-(CuO/Cu2O)-TiO2 at 1273 K has been evaluated. The phase diagrams are useful for the control of the secondary phases that form during synthesis of CCTO, a material exhibiting colossal dielectric response.

Le besoin grandissant de fabriquer des circuits aux fonctions de plus en plus nombreuses<br />nécessite de développer des dispositifs électroniques nouveaux. Les condensateurs<br />METAL-ISOLANT-METAL (MIM) intégrés dans les interconnexions des circuits font<br />partie de ces dispositifs. La course à la réduction de surface de substrat occupée impose<br />de réduire les dimensions de ces condensateurs MIM et d'augmenter leur densité surfacique<br />de capacité.<br />Pour atteindre cette performance il est nécessaire d'utiliser des diélectriques à plus forte<br />permittivité que SiO2. Les oxydes métalliques Al2O3, HfO2 et Ta2O5 font partie des candidats<br />intéressants pour remplir ce rôle de diélectrique à forte permittivité. Néanmoins<br />l'utilisation de tels matériaux ne va pas sans poser de problèmes de courants de fuite, de<br />relaxation diélectrique et de non-linéarités en tension. Du fait de leurs faibles amplitudes,<br />les non-linéarités de capacité en fonction de la tension sont des phénomènes peu étudiés<br />et donc mal compris. Pour certaines applications spécifiques il est nécessaire de contrôler<br />et de limiter ces non-linéarités. Cela nécessite d'abord d'étudier en profondeur leurs caractéristiques et notamment leurs origines physiques.<br />Après des rappels généraux sur la physique des diélectriques, ce manuscrit de thèse<br />présente une étude ab initio des propriétés diélectriques du cristal alpha-Al2O3 qui permet<br />d'extraire le tenseur diélectrique entre 0 et 1E16 Hz et qui montre que la contribution<br />électronique à la permittivité ne dépend pas du champ électrique. Cette première partie,<br />théorique, est suivie d'une étude exhaustive de capacités MIM à base d'alumine amorphe<br />dont on tire les principales caractéristiques des non-linéarités de capacitéen fonction du<br />champ électrique appliqué. Nous proposons ensuite deux modèles physiques (un qui repose<br />sur la polarisation dipolaire et un qui repose sur la polarisation ionique) afin d'interpréter<br />les caractéristiques C(V,T). La dernière partie de ce manuscrit de thèse propose de comparer<br />les caractéristiques électriques des capacités à base d'alumine à celles de capacités<br />utilisant d'autres diélectriques, en particulier le Ta2O5, le Si3N4 et le SiO2. La fin de cette<br />partie est consacrée à l'étude de capacités « multicouches » pour lesquelles on propose<br />un modèle simple pour prévoir les non-linéarités de capacité en fonction de la tension<br />appliquée.<br />Ainsi ce travail de recherche fournit une vue générale des propriétés diélectriques de<br />matériaux diélectriques utilisés en microélectronique tant d'un point de vue théorique<br />que d'un point de vue expérimental.

The aim of the thesis is to examine the dielectric function Ta2O5 insulating layers in tantalum capacitors. The capacitor plugged in the regular mode represents a MIS structure of reverse direction. Three different factors can be determined for the residual current of the component according to its charge transmission mode: the ohmic, Pool–Frenkel, tunnel and Schottky. An apparatus was constructed by the author of the thesis to measure the temporary connection between residual current and rise of temperature of the tantalum capacitors. Annealing of three different sets of tantalum capacitors made by different producers was performed at the temperature of 400 K and nominal voltage of 35 V during the period of 20 days.The experiment has proved the residual current in the electric field changes with rising temperature in time as a result of the ion movement. The singular factors of the residual current are influenced during the process. By the “ion movement” is meant the ion drift influenced by the attached electric field and diffusion caused by the concentration gradient. First, the samples were being annealed for c. 2 x 106 s, and then the residual current was being regenerated under the voltage of 5 V for 106 s. The residual current values increased considerably after annealing, and decreased again to more or less the original level after the regeneration, some of the samples reaching even values bellow the original level. The VA characteristics of the samples measured before and after the process of controlled obsolescence, and after the regeneration prove not only a change in parameters of the different current factors, but also a change of the current transmission mechanism employed in the process.

Studium transportu náboje v Ta2O5 oxidových nanovrstvách se zaměřuje především na objasnění vlivu defektů na vodivost těchto vrstev. Soustředíme se na studium oxidových nanovrstev Ta2O5 vytvořených pomocí anodické oxidace. Proces výroby Ta2O5 zahrnuje řadu parametrů, jež ovlivňují koncentraci defektů (oxidových vakancí) v této struktuře. Vrstva oxidu Ta2O5 o tloušťce 20 až 200 nm se často používá jako dielektrikum pro tantalové kondenzátory, které se staly nedílnou součástí elektrotechnického průmyslu. Kondenzátory s Ta2O5 dielektrickou vrstvou lze modelovat jako strukturu MIS (kov – izolant – polovodič). Anodu tvoří tantal s kovovou vodivostí, katodu potom MnO2 či vodivý polymer (CP), které jsou polovodiče. Hodnoty elektronových afinit, respektive výstupních prací, jednotlivých materiálů potom určují výšku potenciálových bariér vytvořených na rozhraních kov-izolant (M – I) a izolant-polovodič (I – S). Dominantní mechanizmy transportu náboje lze určit analýzou I-V charakteristiky zbytkového proudu. Dominantní mechanizmy transportu náboje izolační vrstvou jsou ohmický, Poole-Frenkelův, Shottkyho a tunelování. Uplatnění jednotlivých vodivostních mechanismů je závislé na teplotě a intenzitě elektrického pole v izolantu. Hodnota zbytkového proud je významným indikátorem kvality daného izolantu. Ten závisí na technologii výroby kondenzátoru, významně především na parametrech anodické oxidace a na materiálu katody. I-V charakteristiky zbytkového proudu se měří v normálním a reversním módu, tj. normální mód značí kladné napětí na anodě a reversní mód záporné napětí na anodě. I-V charakteristika je výrazně nesymetrická, a proto tyto kondenzátory musí být vhodně polarizovány. Nesymetrie I-V charakteristiky se snižuje s klesající teplotou, při teplotě pod 50 K a je možno některé kondenzátory používat jako bipolární součástky. Z analýzy I-V charakteristiky lze určit řadu parametrů, jako tloušťku izolační vrstvy a koncentraci defektů v izolační Ta2O5 vrstvě a dále lze odhadnout parametry MIS modelu kondenzátoru - stanovit hodnotu potenciálových bariér na rozhraních M – I a I – S. Měření C-V charakteristik při různých teplotách v rozsahu 10 až 300 K je využíto pro určení výšky potenciálové bariéry na rozhraní I – S, závislosti kapacity na teplotě a dále pro výpočet efektivní plochy elektrod. Z výbrusu vzorků na skenovacím elektronovém mikroskopu byly určeny tloušťky dielektrika Ta2O5 pro jednotlivé vyhodnocované řady kondenzátorů.