"March 2002." / The numerals in title are subscript. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Zhou Wenli. / "October 2003." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2003. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

No description available.

��-SiC is a semiconductor for high temperature devices, which exhibits several outstanding properties such as high thermal stability, good chemical stability and wide band gap. There is a possibility of fabricating a crack-free ultrathin SiC film on silicon wafers by pyrolysis of polymethylsilane (PMS) film. This study looks into the possibility, as the first phase, to modify the surface of silicon and graft PMS onto the surface. A new technique reported in this thesis consists of a surface modification with trimethoxysilylpropene (TSP) followed by the surface attachment of dichloromethylsilane (DMS) in the presence of a platinum catalyst, which acts as the first unit for grafting PMS molecules by the sodium polycondensation of additional DMS monomers. The grafted PMS polymers would serve as the pyrolytic precursor to be converted into thin layers of SiC. Surface analysis of these films on silicon wafers by X-ray photoelectron spectroscopy (XPS) indicated that the silicon surface was successfully modified with TSP, attached with DMS, and finally grafted with PMS. It was also confirmed by powder X-ray diffraction (XRD) that PMS formed simultaneously in the bulk solution was converted into SiC by pyrolysis at temperatures above 1100��C under Ar atmosphere. Extended studies showed that the PMS-derived coatings, formed in an Ar stream containing 1% H��� at 400��C, were significantly oxidized, and further heating to 700��C yielded a Si0��� layer with graphitic carbon. The intensity of the graphite peak decreased with an increase in the pyrolysis temperature. Based on these preliminary studies towards the second phase, i.e. the pyrolysis of PMS to SiC, the need for further research to eliminate the oxidation source(s) is strongly suggested. / Graduation date: 2001

A low pressure halide transport chemical vapor deposition (HTCVD) system to grow ZnS:Mn electroluminescent phosphors is characterized. Reactor parameters such as gas composition, gas flow rate, and source and substrate temperature are investigated. Crystal structure is investigated using x-ray diffraction, electron spin resonance, and transmission electron microscopy. Chemical characterization includes electron microprobe and Auger electron spectroscopy. Double-insulating alternating current thin film electroluminescent devices are constructed around the HTCVD phosphors. The devices are studied using electroluminescence (brightness-voltage), photoluminescence and electrical characterization. The luminescent properties of films with a (002) preferred orientation are studied. A maximum electroluminescent brightness of 1475 cd/m�� is achieved. The photoluminescence (PL) of ZnS:Mn films grown at different substrate temperatures is compared. The intensity correlates to Mn concentration. Red emission is seen in films grown at lower substrate temperature which have low Mn concentration. Mechanisms proposed in the literature cannot explain the red emission. A blue PL ZnS film intentionally doped with chlorine is achieved. This blue emission is associated with self-activated (SA) emission. Hexagonal and cubic thin-film ZnS:Mn electroluminescent phosphors are grown by HTCVD. Processing conditions, most notably introduction of a H���S ambient, lead to a change in the preferred orientation and phase of the polycrystalline thin film. In addition to the commonly reported growth along the closest packed plane [(111) for cubic crystal structure or (002) for hexagonal], thin films have been grown along the less dense cubic (311) direction. The electrical characterization of ZnS:Mn ACTFEL devices with phosphors having different structure and preferred orientation is studied. A comparison of different preferred orientations and structures on conduction charge, obtained by internal charge-phosphor field (Q-F[subscript]p), is performed. When grown in the (311) direction, the conduction charge of a ZnS:Mn ACTFEL device increases from 2.3 ��C/cm�� to 5.0 ��C/cm��. Moreover, the leakage charge, Q[subscript]l[subscript]e[subscript]a[subscript]k, of the (311) HTCVD films is small compared to other devices. / Graduation date: 1998

Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references. Also available in electronic version.

Thesis (Ph. D.)--University of Chicago, Dept. of Chemistry, June 1999. / Includes bibliographical references. Also available on the Internet.

In the past decades new interest in diamond and possible applications of diamond has emerged. In this master thesis, optical properties of thin films of diamond were investigated for the possible use as an Internal Reflection Element (IRE) in Attenuated Total Reflection Fourier Infra Red (ATR-FTIR) spectroscopy. First a theoretical study of optical properties was made using Fresnel’s equations. Secondly the ray-tracing software TracePro was tested as a possible tool for further investigations of optical properties in advanced geometries. Finally, experimental measurements were made to compare the simulated result with measured data. Results obtained with TracePro were consistent with the theoretically expected results as to dependence of layer thickness, polarization and wavelength, and TracePro was therefore a possible tool for the investigation of optical properties in thin films. Although no extra information was given from TracePro for this specific geometry, TracePro can be a valuable tool in the investigation of more advanced geometries. The experimental measurements showed the importance of a well-defined layer thickness and also showed a stronger dependence of the underlying coating materials than expected from simulations. Further investigations need to be made to fully understand the dependence of the underlying coating materials SiO2 and Si3N4, particularly regarding different polarization states.

Dissertation (Ph.D.)--University of Toledo, 2008. / Typescript. "Submitted as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics." Bibliography: leaves 137-143.

Thesis (Ph.D.)--New Jersey Institute of Technology and Rutgers, The State University Of New Jersey-Newark, Federated Physics Department, 2000. / JT20011108 MBT20100106 ANT20100113 Typescript. Includes bibliographical references (leaves 108-115). Also available via the World Wide Web.