- About
-
The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 71 to 80 of 2973 (0.052 seconds)Spelling suggestions: "subject:"[een] THIN FILMS"" "subject:"[enn] THIN FILMS""
| 71 |
The growth and orientation of thin crystalline bismuth filmsNelson, David Clair, 1946- January 1971 (has links)
No description available.
|
| 72 |
Radio frequency glow discharge sputtering of thin filmsPeters, Timothy John, 1950- January 1973 (has links)
No description available.
|
| 73 |
Microstructural configuration influence on electromigration in Sn/Cu thin filmsXu, Yi 12 1900 (has links)
No description available.
|
| 74 |
Structure and properties of sputtered ZnO transducers.Fahmy, Aly Hassan. January 1971 (has links)
No description available.
|
| 75 |
Low temperature growth of Amorphous Silicon thin film.Malape, Maibi Aaron. January 2007 (has links)
<p>The growth of amorphous hydrogenated silicon (a-Si:H) thin films deposided by hot wire chemical vapor deposition (HWCVD) has been studied. The films have been characterised for optical and structural properties by means of UV/VIS,FITR,ERDA, XRD.XTEM and Raman spectroscopy. Low subtrate heater temperatures in the range form 130 to 200 degrees celcius were used in this thesis because it is believed to allow for the deposition of device quality a-Si:H which can be used for electronic photovoltaic devices. Furthermore, low temperatures allows the deposition of a-Si:H on any subtrate and thus offers the possibility of making large area devices on flexible organic substances. We showed that the optical and structural properties of grown a-Si:H films depended critically upon whether the films were produced with silane gas or silane diluted with hydrogen gas. We also showed that it is possible to to deposit crystalline materials at low temperature under high hydrogen dilution ratio of silane gas.</p>
|
| 76 |
Nitridation reactions with hydrazineVogt, Kirkland W. 08 1900 (has links)
No description available.
|
| 77 |
A study of self-sustaining thin-films as a means of fusion plasma impurity and wall erosion controlDeWald, A. Bruce, Jr. 12 1900 (has links)
No description available.
|
| 78 |
Electrical conduction in nondegenerate, nonsymmetrical, epitaxial semiconducting filmsCovington, Dale Wayne 12 1900 (has links)
No description available.
|
| 79 |
Slow positron annihilation spectroscopy applied to the analysis of the semiconductor, silicide, and titanium nitride structuresFrost, Robert Lewis 08 1900 (has links)
No description available.
|
| 80 |
Development and integration of thin film zinc oxide integral resistors in SOPMorales, Hector Roberto 05 1900 (has links)
No description available.
|
Page generated in 0.0589 seconds