Uma das técnicas para fabricar microestruturas em diamante é usar moldes em silício microfabricados. Assim, microestruturas são produzidas em laminas de silício, um filme de diamante é depositado sobre essa lamina e o silício é corroído. Dessa forma é possível se obter réplicas de diamante das microestruturas que estavam presentes na superfície do molde de silício. Nesta técnica é muito importante a fidelidade morfológica da réplica de diamante, quando comparada ao molde de silício, previamente microfabricado. Um dos objetivos deste trabalho é analisar quantitativamente a fidelidade de reprodução de microestruturas em filmes de diamante, utilizando moldes de silício microfabricados. Nossos resultados mostram que a rugosidade das réplicas de diamante é sistematicamente maior que a rugosidade dos moldes de silício. Medindo degraus em escala de centenas de nanômetros, o erro na reprodução morfológica está entre 6 e 11 %. No caso de medidas de degraus em escala de dezenas de nanômetros, o erro na reprodução é de aproximadamente 18 %. O segundo objetivo deste trabalho consiste em comparar a variação da rugosidade de uma superfície devido ao recobrimento com filmes de DLC. Os resultados sugerem que, para substratos com rugosidade original de centenas de nanômetros, a variação da rugosidade tende a aumentar com a espessura do filme de DLC até um valor máximo, a partir do qual ela tende a diminuir. Para substratos com rugosidade original de alguns poucos nanômetros, a variação da rugosidade oscila aleatoriamente, não apresentando tendências de aumentar ou diminuir com a espessura do filme de DLC. Finalmente, a última parte desta Tese foi fabricar um microbocal de diamante utilizando a técnica de moldes microfabricados em silício. / One of the techniques to fabricate microstructures in diamond is to use microfabricated silicon molds. Microstructures are produced on silicon wafer; diamond film is deposited on it and the silicon is etched. In this way, it is possible to obtain diamond replicas of the microstructures that were present in the silicon surface. In this technique it is very important the morphological fidelity of the diamond replica, when compared with the silicon mold previously microfabricated. One of our objectives in this work is to analyze quantitatively the reproduction fidelity of microstructures in diamond films, using microfabricated silicon molds. The results show that, roughnesses of the diamond replicas are systematically higher than the roughness of the silicon molds. Measuring steps in scales of hundreds of nanometers, the reproduction error is between 6 and 11 %. In the case of steps measured in scales of tenth of nanometers, the reproduction error is about 18 %. A second objective of this work is to compare the roughness change of rough surfaces coated with DLC films. The results suggest that, for substrates with original roughness of hundreds of nanometers, the roughness shift tends to increase with the DLC film thickness until a maximum value and then it tends to decrease. For substrates with original roughness of few nanometers, the roughness shift oscillates erratically and it does not tend to increase or decrease with the DLC film thickness. Finally, the last part of this Thesis was to fabricate a diamond micronozzle, using the technique of silicon molds microfabricated.

Filmes finos de TiO2 foram crescidos sobre silício (100) através do processo de deposição química de organometálicos em fase vapor (MOCVD). Os filmes foram crescidos a 400, 500, 600 e 700ºC em um equipamento horizontal tradicional. Tetraisopropóxido de titânio foi utilizado como fonte tanto de titânio como de oxigênio. Nitrogênio foi utilizado como gás de arraste e como gás de purga. Foram realizadas análises de difração de raios-x para a caracterização da estrutura cristalina. Microscopia eletrônica de varredura com canhão de emissão de campo foi utilizada para a avaliação da morfologia e da espessura dos filmes. Os filmes de TiO2 crescidos a 400 e a 500ºC apresentaram fase anatase. O filme crescido a 600ºC apresentou as fases anatase e rutilo, enquanto que o filme crescido a 700ºC apresentou, além de anatase e rutilo, a fase broquita. Para se avaliar o comportamento eletroquímico dos filmes foi utilizada a técnica de voltametria cíclica. Os testes indicaram um forte caráter capacitivo dos filmes de TiO2. O pico de corrente anódica é diretamente proporcional à raiz quadrada da velocidade de varredura para os filmes crescidos a 500ºC, sugerindo que o mecanismo predominante de transporte de cátions seja por difusão linear. Observou-se que o filme crescido por 60 minutos permitiu maior facilidade de intercalação e desintercalação de íons Na+. Os filmes crescidos nas demais condições não apresentaram pico de corrente anódica, embora o acúmulo de cargas se fizesse presente. / Titanium dioxide (TiO2) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalate and deintercalate easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film.

Neste trabalho, apresentamos o estudo magnético e magneto-óptico de filmes de R-Co e bicamada Y-Co/R-Co, R=Gd, Tb. Nesses filmes, três tipos de magnetismo são observados: ferromagnetismo (Y-CO), ferrimagnetismo (GdCo), e sperimagnetismo (Tb-Co). As amostras foram depositadas por DC magnetron sputtering sobre substrato de vidro e protegidas da oxidação por camadas de 30nm de espessura de Sl IND.3 N IND.4. A caracterização magnética das amostras foi feita com a utilização dos magnetômetros SQUID, MAVe MEK-bt. Uma grande parede de domínios, localizada na interface da bicamada amorfa YCo IND.2/GdCo IND.2 é formada durante uma transição ferri-ferromagnética macroscópica. O modelo para analisar a parede de domínios é baseado nas energias Zeeman, anisotropia e troca. Como resultado, nós obtivemos três equações interdependentes, relacionando a espessura da parede de domínios , a posição relativa da parede e a constante de troca A, para os pares atômicos Co-Co. Nesta tese, apresentamos a dependência térmica de , e A. O modelo foi aperfeiçoado para levar em conta a forma não usual da parede de domínios presente na interface da bicamada. A parede de domínios ocupa ~64% do volume da bicamada e está localizada, em sua maior parte (~60%),na camada Y-Co. A constante de troca A apresentou um decréscimo monotônico, com os valores variando de ~3.1xl0 POT.-7 erg/cm a 25K para ~2.0xl0 POT.-7 erg/cm à temperatura ambiente. O Gd foi substituído por Tb e o estudo da parede de domínios na bicamada amorfa YCo2/TbCo2 , é apresentado. A principal diferença entre os filmes de Gd-Co e de Th-Co é o tipo de magnetismo que eles apresentam: o primeiro é ferrimagnético e o segundo é sperimagnético. Como consequência, o filme de Tb-Co apresenta um campo de anisotropia multo maior que o filme de Gd-Co, à temperatura ambiente. O efeito da alta anisotropia sobre a bicamada é uma parede de domínios quase que totalmente localizada na camada Y-Co. Este comportamento foi usado para determinar a dependência de com o campo magnético aplicado, e o valor da constante de troca A para as diferentes temperaturas. O valor de A variou de 1.8xl0 POT.-7 erg/cm a 150K para 1.4xl0 POT.-7 erg/cm a 300K e, para todas as temperaturas, decresceu de ~100nm, no campo de transição (Ht), para ~20nm para lkOe. Para aumentar o entendimento sobre as bicamadas à base de Gd e Tb, a dependência térmica da magnetização de saturação de filmes de R-Co (R=Gd, Tb) foi simulada com a teoria de campo médio. Nós fizemos também o estudo introdutório de filmes ternários. As caracterizações magnética e magneto-óptica dos filmes de R-FeCo (R=Gd, Tb) , e da bicamada de Gd-FeCo/Tb-FeCo revelaram anisotropia planar e perpendicular nos filmes à base de Gd e Tb, respetivamente. / In this work we present the magnetic and magneto-optical study of thin films of R-Co and Y-Co/R-Co bilayer, R=Gd, Tb. Three different kínds of magnetism are found in these films: ferromagnetism (Y-Co), ferrimagnetism (Gd-Co) and sperímagnetísm (Tb-Co). The samples were deposíted by DC magnetron sputteríng on glass substrate, and were protected from oxídatíon by 30nm thick Sí3N4, layers. Magnetic characterization of the samples was done using SQUlD, VSM and transverse magneto-optícal Kerr effect (TMOKE) magnetometers. A large doma in wall (DW), localízed at the YCo2/ Gd Co2, amorphous bilayer interface, is formed duríng a macrosropic ferri-ferromagnetíc transitíon. A model to analyze the DW ís based on Zeeman, anísotropy and exchange energies. As a result, we obtained three interdependent equations, relatíng the DW thickness , the relative position of the wall , and the exchange constant A. In this PhD thesis we present the temperature dependence of , and A. The model was ímproved to account for the unusual DW present at the bílayer interface. About 60% of the DW was inside the Y-CO layer, and the DW was found to be quite large, occupying ~64% of the volume of the bilayer. The exchange constant A presents a monotonically decreasing value, ranging from ~3.1 xl0-7 erg/cm at 25K to ~2.0 Xl0-7 erg/cm at room temperature. Gd was replaced by Tb and a study of the DW in amorphous YCo2/TbCo2, bilayer is presented. The main difference between Gd-Co and Tb-Co films is the kind of magnetism they present, the first is ferrimagnetic and the second is sperimagnetíc. As a consequence, the Tb based film shows a much higher anisotropy field than the Gd-Co film, at room temperature. The high Tb-Co anisotropy effect on the bílayer is a DW almost totally localized in the Y-Co layer. This behavior was used to determine the dependence on the magnetic field and the exchange constant A for different temperatures. A ranged from 1.8xl0-7 erg/cm at 150K to 1.4xl0-7 erg/cm at 300K and, for all temperatures, decreases from ~l00nm, at the transition field (Ht), to ~20nm at lkOe. In order to increase the understanding of the Gd and Tb based bilayers, the temperature dependence of the saturation magnetization of R-Co (R=Gd,Tb) films was simulated by the mean field theory. The values of exchange integrais JR-Co between R and Co atoms are in agreement to the literature. We also studied some ternary tilms, but in less detail. The magnetic and magneto-optical characterization of R-FeCo (R=Gd, Tb) films and GdFeCo/Tb-FeCo bilayer revealed an in-plane and perpendicular anisotropy in Gd and in Tb based fiims, respectively.

Esta dissertação descreve os métodos empregados na preparação por solução de filmes de copolímeros P(VDF-TrFE) nas composições molares 60/40, 70/30 e 80/20. Foram utilizadas as técnicas de deposição por centrifugação (spin coating deposition) e de espalhamento por extensor, usando acetona e metil-etil-cetona (MEK) como solventes. Filmes de boa qualidade só foram obtidos quando se acelerou o processo de evaporação do solvente, através da passagem de um fluxo de ar seco na câmara onde os filmes eram produzidos. Medidas de espectroscopia de infra-vermelho confirmaram a ausência de solvente nos filmes, já que observou-se que o pico 1715 cm-1 (carbonilha) característico do MEK não aparece nos resultados com filmes. A caracterização dos filmes fabricados foi feita através de medidas de calorimetria diferencial exploratória de varredura (DSC), difração de raios-X, espectroscopia de infra-vermelho e cromatografia líquida por exclusão de tamanho (GPC). Nos termogramas de DSC puderam ser identificadas as transições de fase ferro-paraelétrica (na temperatura de Curie, Tc) e de fusão. Os valores de Tc e da temperatura de fusão, Tf, encontrados são consistentes com os valores da literatura, com Tc aumentando com o conteúdo de VDF, ao passo que o oposto ocorre com Tf, devido ao fato que o aumento do percentual de TrFE na região cristalina aumenta a estabilidade da fase paraelétrica. Os difratogramas de Raios-X apresentaram, basicamente, um ombro largo correspondente à porção amorfa do filme, e um pico alto e estreito devido a parte cristalina do filme. No ajuste dos difratogramas através de uma função de Lorentz modificada, os resultados para as amostras de 60/40 e 70/30 foram ajustadas com três picos, o que parece indicar que pode haver duas fases cristalinas para estas amostras. Já os resultados para a amostra de 80/20 foram ajustados com apenas dois picos. O tratamento térmico das amostras, a diversas temperaturas, mostrou influenciar fortemente as propriedades dos filmes. Os seus efeitos mais importantes são o aumento da temperatura de Curie e da percentagem de cristalinidade do filme com a temperatura de tratamento / This dissertation describes the experimental methods employed in the fabrication of thin films (up to 40 micra) of the copolymer P(VDF-TrFE) for three different VDF contents, Viz. 60/40, 70/30 and 80/20. The copolymers were dissolved in either acetone or methyl-ethyl-ketone(MEK) and deposited on a solid substrate using spin coating or a sliding-knife. Good quality films could only BR obtained after dry air was flushed into the chamber where the films were fabricated. Infra-red spectrocopy measurements confirmed the abscene of solvent in the samples, as the 1715 cm-1 peak from MEK is not present in the results for the films. The film characterization was carried out using differential scanning calorimetry (DSC), X-ray diffraction, infra-red spectrocopy and gel permeation chromatography (GPC). Phase transitions could be identified in the DSC thermography which can be related to the ferro-paraelectric transition (at the Curie temperature, Tc) and to the melting of the sample. The values for Tc and the melting temperature, Tf), were consistent with those published in the literature, with Tc increasing with the contents of VDF, while the opposite is true for Tf because the increase in the TrFE contents causes the stability of the paraelectric phase to increase. The X-ray diffractograms displayed, basically, one broad halo due to the amorphous part of the film, and a eak due to its crystalline region. The diffractograms were fitted using a modified Lorentz function, where three peaks had to be assumed for the 60/40 and 70/30 samples. This appears to indicate that there may exist two crystalline phases in these samples. The results for 80/20 samples, on the other hand, were fitted with two peaks. The thermal treatment of the samples, under various temperatures, proved to influence strongly the properties of the films. Its main effects are the increase in the Curie temperature and the increase in the degree of crystallinity of the films with increasing temperature of thermal treatment

O objetivo deste trabalho é desenvolver a tecnologia de produção de filmes finos de precisão, de materiais dielétricos e/ou metálicos sobre componentes óticos de precisão. Para tal, cálculos computacionais de filmes finos foram desenvolvidos, tendo como finalidade projetarmos teoricamente qualquer tipo de camadas finas. As características dos filmes são mostradas graficamente ou em forma de tabela. A tecnologia de evaporação em alto vácuo de materiais tais como SiO2, Ti2O3, MgO, MgF2 e criolita (Na3AlF6), foi implantada no laboratório de filmes finos do DFCM. Alguns desses materiais, os óxidos, foram evaporados pioneiramente no Brasil neste trabalho. As camadas estudadas foram: Anti-refletoras com uma, duas e três camadas, espelhos de alta refletividade para lasers, filtros interferencial, filtros passa banda, separadores de feixes, etc. Tendo como ponto de partida os cálculos computacionais desenvolvidos e a tecnologia de evaporação implantada, algumas camadas de filmes finos de utilidade em ótica foram finalmente produzidas. A caracterização dos filmes finos por nós produzidos foi feita por medida da reflexão ou transmissão na região do infravermelho próximo, visível e ultravioleta, sendo para tal utilizado o espectrofotometro Cary 17. Estes espectros mostram boa concordância com os resultados teóricos obtidos. / In this work we developed the technology of production of precision metallic and/or dielectric thin films evaporated on optical components. Numerical calculations of the characteristics of the films was developed allowing the knowledge of the reflectance spectra of the coatings before the evaporation, saving the cost of test by evaporation. The high vacuum evaporation technique of materials like SiO2, Ti2O3, MgO, Al2SO3, MgF2, and criolite (Na3AlF6) was implanted in the thin film laboratory of the DFCM. Some of this materials was evaporated by the first time in Brazil in this work. The coatings studied was: Anti-reflecting coatings of one, two and three layers, high reflecting mirrors for lasers, band pass filter, high and low pass filters. Starting with the numerical calculations some of the most frequently used coating in optics was projected and finally produced in the laboratory. These films were characterized by the spectra of reflection obtained with the spectrometer Cary 17. The characteristics of the films produced agree very well with the calculations.

Wu, Xuefeng = 鉀摻雜碳氫分子膜的電荷轉移以及金屬薄膜中的贗能隙效應研究 / 吳雪峰. / Thesis Ph.D. Chinese University of Hong Kong 2015. / Includes bibliographical references (leaves 103-114). / Abstracts also in Chinese. / Title from PDF title page (viewed on 14, September, 2016). / Wu, Xuefeng = Jia shan za tan qing fen zi mo de dian he zhuan yi yi ji jin shu bo mo zhong de yan neng xi xiao ying yan jiu / Wu Xuefeng.

Wang Xiaofeng = Hf基高K介电薄膜的微观结构和电子结构研究 / 王晓峰. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references (leaves 62-67). / Text in English; abstracts in English and Chinese. / Wang Xiaofeng = Hf ji gao K jie dian bo mo de wei guan jie gou he dian zi jie gou yan jiu / Wang Xiaofeng. / Table of Contents --- p.iv / List of Figures --- p.vii / List of Tables --- p.x / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Background --- p.3 / Chapter 2.1 --- Ideal high-k materials --- p.3 / Chapter 2.1.1 --- Current problems with Si02 and possible solutions --- p.3 / Chapter 2.1.2 --- Requirements on the high-k gate dielectric materials --- p.6 / Chapter 2.2 --- Recent results on high-k gate dielectrics --- p.8 / Chapter 2.2.1 --- A1203 --- p.8 / Chapter 2.2.2 --- Y203 and La203 --- p.9 / Chapter 2.2.3 --- Hf02 and Zr02 --- p.10 / Chapter 2.2.4 --- Pseudo-binary Alloys --- p.10 / Chapter 3 --- Experimental and Instrumentation --- p.13 / Chapter 3.1 --- Transmission electron microscopy (TEM) --- p.13 / Chapter 3.2 --- Transmission electron diffraction (TED) --- p.15 / Chapter 3.3 --- Electron energy loss spectroscopy (EELS) --- p.16 / Chapter 4 --- Data Analysis Methodology --- p.22 / Chapter 4.1 --- Diffraction analysis --- p.22 / Chapter 4.1.1 --- Ring ratio analysis for polycrystal diffraction pattern --- p.23 / Chapter 4.1.2 --- RDF analysis for amorphous materials --- p.24 / Chapter 4.2 --- Eliminating the plural scattering in EELS --- p.29 / Chapter 4.2.1 --- Removal of plural scattering from inner-shell edges --- p.30 / Chapter 4.2.2 --- Fourier-Ratio deconvolution --- p.30 / Chapter 4.2.3 --- "Demonstration using Co L2,3 core-loss spectrum" --- p.31 / Chapter 5 --- The Temperature Effect on the Microstructure of HfO2 Films --- p.37 / Chapter 5.1 --- Experimental --- p.38 / Chapter 5.2 --- Phase identification and crystallinity analysis of the Hf02 thin films --- p.38 / Chapter 5.2.1 --- Phase and crystallinity analysis from TEDs --- p.38 / Chapter 5.2.2 --- The phase and crystallinity evolution with the growth temperature --- p.39 / Chapter 5.3 --- The local symmetry of Hf atom in the films --- p.40 / Chapter 6 --- Effect of A1 Addition on the Microstructure and Electronic Structure of HfO2 Films --- p.43 / Chapter 6.1 --- Experimental --- p.44 / Chapter 6.2 --- RDF analysis of HfAlO films --- p.45 / Chapter 6.3 --- The local symmetry of Hf atom in the HfAlO films --- p.46 / Chapter 6.4 --- Loss functions of HfAlO films --- p.48 / Chapter 7 --- Comparison of A1 and Y Addition on the Microstructure of Hf02 Films --- p.56 / Chapter 7.1 --- Experimental --- p.57 / Chapter 7.2 --- Phase identification and crystallinity analysis of the alloy thin films --- p.57 / Chapter 7.2.1 --- Phase and crystallinity analysis from TEDs --- p.57 / Chapter 7.2.2 --- The phase and crystallinity evolution with the Y and A1 incorporation --- p.58 / Chapter 7.3 --- The local symmetry of Hf atom in the alloy thin films --- p.59 / Chapter 8 --- Conclusion --- p.61 / Bibliography --- p.62

by Kwong-hung Tam = 低壓化學氣相沈積硅膜之電學特性 / 譚廣雄. / Thesis (M.Ph.)--Chinese University of Hong Kong, 1985 / Bibliography: leaves 102-105. / by Kwong-hung Tam = Di ya hua xue qi xiang chen ji gui mo zhi dian xue te xing / Tan Guangxiong.

Solar water-splitting is a potentially transformative renewable energy technology. Slow kinetics of the oxygen evolution reaction (OER) limit the efficiency of solar-water-splitting devices, thus constituting a hurdle to widespread implementation of this technology. Catalysts must be stable under highly oxidizing conditions in aqueous electrolyte and minimally absorb light. A grand goal of OER catalysis research is the design of new materials with higher efficiencies enabled by comprehensive understanding of the fundamental chemistry behind catalyst activity. However, little progress has been made towards this goal to date. This dissertation details work addressing major challenges in the field of OER catalysis. Chapter I introduces the current state-of-the-art and challenges in the field. Chapter II highlights work using ultra-thin films as a platform for fundamental study and comparison of catalyst activity. Key results of this work are (1) the identification of a Ni0.9Fe0.1OOH catalyst displaying the highest OER activity in base to date and (2) that in base, many transition-metal oxides transform to layered oxyhydroxide materials which are the active catalysts. The latter result is critical in the context of understanding structure-activity relationships in OER catalysts. Chapter III explores the optical properties of these catalysts, using in situ spectroelectrochemistry to quantify their optical absorption. A new figure-of-merit for catalyst performance is developed which considers both optical and kinetic losses due to the catalyst and describes how these factors together affect the efficiency of composite semiconductor/catalyst photoanodes. In Chapter IV, the fundamental structure-composition-activity relationships in Ni1-xFexOOH catalysts are systematically investigated. This work shows that nearly all previous studies of Ni-based catalysts were likely affected by the presence of Fe impurities, a realization which holds significant weight for future study of Ni-based catalyst materials. Chapter V discusses the synthesis of tin-titanium oxide nanoparticles with tunable lattice constants. These materials could be used to make high-surface-area supports for thin layers of OER catalysts, which is important for maximizing catalyst surface area, minimizing the use of precious-metal catalysts, and optimizing 3D structure for enhanced mass/bubble transport. Finally, Chapter VI summarizes this work and outlines directions for future research. This work contains previously published and unpublished co-authored material. / 2015-03-29

Controlling the electronic structure and requisite charge transfer at and across interfaces is a grand challenge of materials science. Despite decades of research and numerous successes in the fields microelectronics and photovoltaics much work remains to be done. In many applications, whether they be in microelectronics, photovoltaics or display technology there is a demand for multiple functions at a single interface. Historically, existent materials were either discarded as an option due to known properties or tested with some application based figure of merit in mind. Following this, the quality of the material and/or the preparation of the surface/interface to which the material would be deposited was optimized. As the microelectronics and photovoltaics industries have matured, continued progress (faster, lower power transistors and more efficient, cheaper, abundant solar cells) will require new materials (possibly not previously existent) that are fundamentally better for their application than their highly optimized existent counter parts. The manifestation of this has been seen in the microelectronics field with introduction of hafnium silicates to replace silica (which had previously been monumentally successful) as the gate dielectrics for the most advanced transistors. Continued progress in efficient, cheap, abundant photovoltaics will require similar advances. Advances will be needed in the area of new abundant absorbers that can be deposited cheaply which result in materials with high efficiencies. In addition, selective contacts capable of extracting charge from efficient absorbers with low ohmic losses and low recombination rates will be needed. Presented here are two approaches to the multifunctional interface problem, first the use of amorphous alloys that open up the accessible composition space of thin films significantly and second the use of bilayers that loosen the requirements of a single film at an interface.