Schwertmannite, a ferric oxyhydroxysulfate mineral typically found under acidic, high sulfate and iron aqueous conditions, such as acid mine drainage environments, was studied using analytical high resolution transmission electron microscopy (HRTEM). HRTEM offers advantages over bulk techniques such as powder x-ray diffraction and pair distribution function (PDF) analysis of synchrotron data, in its ability to discern multiple phases within poorly crystalline nanominerals. Based on extensive HRTEM observations of both natural and synthetic schwertmannite samples, the authors suggest that schwertmannite should not be described as a single phase mineral with a repeating unit cell, but as a polyphasic nanomineral with crystalline areas spanning less than a few nanometers within an amorphous matrix. The few visible lattice fringes observable in both natural and synthetic schwertmannite agree well with d-spacings of goethite (and jarosite in natural samples) implying that the transformation from schwertmannite to these phases occurs as a gradual structural reordering at the nanoscale. In the synthetic study, the complete transformation from schwertmannite to goethite nanorods and nanoparticles within 24 hours at 75°C was observed, indicating a low energetic barrier to schwertmannite's phase transformation. We also found that amorphous silica can be intimately entrained within natural schwertmannite, and that high concentrations of arsenic can be held in close association of nanocrystalline regions of the mineral. / Ph. D.

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abstract: In this dissertation research, conventional and aberration-corrected (AC) transmission electron microscopy (TEM) techniques were used to evaluate the structural and compositional properties of thin-film semiconductor compounds/alloys grown by molecular beam epitaxy for infrared photo-detection. Imaging, diffraction and spectroscopy techniques were applied to TEM specimens in cross-section geometry to extract information about extended structural defects, chemical homogeneity and interface abruptness. The materials investigated included InAs1-xBix alloys grown on GaSb (001) substrates, InAs/InAs1-xSbx type-II superlattices grown on GaSb (001) substrates, and CdTe-based thin-film structures grown on InSb (001) substrates. The InAsBi dilute-bismide epitaxial films were grown on GaSb (001) substrates at relatively low growth temperatures. The films were mostly free of extended defects, as observed in diffraction-contrast images, but the incorporation of bismuth was not homogeneous, as manifested by the lateral Bi-composition modulation and Bi-rich surface droplets. Successful Bi incorporation into the InAs matrix was confirmed using lattice expansion measurements obtained from misfit strain analysis of high-resolution TEM (HREM) images. Analysis of averaged intensity line profiles in HREM and scanning TEM (STEM) images of the Ga-free InAs/InAs1-xSbx type-II strained superlattices indicated slight variations in layer thickness across the superlattice stack. The interface abruptness was evaluated using misfit strain analysis of AC-STEM images, electron energy-loss spectroscopy and 002 dark-field imaging. The compositional profiles of antimony across the superlattices were fitted to a segregation model and revealed a strong antimony segregation probability. The CdTe/MgxCd1-xTe double-heterostructures were grown with Cd overflux in a dual-chamber molecular beam epitaxy with an ultra-high vacuum transfer loadlock. Diffraction-contrast images showed that the growth temperature had a strong impact on the structural quality of the epilayers. Very abrupt CdTe/InSb interfaces were obtained for epilayers grown at the optimum temperature of 265 °C, and high-resolution imaging using AC-STEM revealed an interfacial transition region with a width of a few monolayers and smaller lattice spacing than either CdTe or InSb. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2017

This thesis explores theoretical aspects of scanning transmission electron microscopy (STEM) and the comparison of simulation with experiment. / The long standing contrast mismatch problem between theory and experiment in conventional high resolution transmission electron microscopy (HRTEM) is examined using the principle of reciprocity and bright field scanning transmission electron microscopy (BFSTEM). It is found that quantitative agreement between theoretical and experimental images is possible provided that theory suitably accounts for the spatial incoherence of the source, and that experimental images are placed on an absolute scale with respect to the incident beam current. Agreement between theory and experimental image contrast is found to be independent of specimen thickness and probe defocus. / Core-loss electron energy-loss spectroscopy (EELS) is a powerful experimental tool with the potential to provide atomic-resolution information about the electronic structure at defects and interfaces in materials and nanostructures. Interpretation, however, is nonintuitive due to the nonlocal ionization potential. Novel improvements in microscope design and operating environment have enabled two dimensional chemical maps. This has permitted a more thorough theoretical analysis. This thesis compares experimental STEM EELS images of LaMnO3, BiSrMnO3 and Si samples to the relevant theoretical simulations. Image features which at first appear counter intuitive are discussed and explained with the accompanying theoretical simulations. It is demonstrated, using a sample of SrTiO3, that more direct interpretation of atomic resolution chemical maps is possible when using energy dispersive x-ray spectroscopy (EDS) in STEM. / This thesis considers extending chemical mapping in STEM EELS to three dimensions using depth sectioning. It explores, theoretically, the feasibility to depth section zone-axis aligned crystals that contain embedded impurities. In STEM EELS this is found to be possible for point defects but not for larger extended objects such as nanoparticles. / The theory describing the mechanism by which contrast is obtained in elastic scanning confocal electron microscopy (SCEM) is developed. It is shown that there is no first order phase contrast in SCEM and thus low image contrast. Finally, energy filtered scanning transmission electron microscopy (EFSCEM) is developed theoretically. The fundamental equation describing image formation is derived and an efficient computation method is developed to allow the rapid calculation of EFSCEM images.

The research carried out here employed analytical and imaging transmission electron microscopy and scanning transmission electron microscopy to gain a good understanding of local structure and composition of semiconductor nanocrystals and quantum dots for electronics and optoelectronics applications. One of the world's most advanced analytical scanning transmission electron microscopes in the field, the Daresbury SuperSTEM, was used to scrutinise the structure and composition of the samples. Three nanostructure systems are investigated in this thesis: 1. Structures consisting of Ge-nanocrystals (NCs) in alumina. Here HRTEM suggests relaxed and twinned smaller NCs grown annealed at lower temperature compared to elongated non-faulty bigger NCs annealed at higher temperature. HRTEM also suggests a polycrystalline structure of the matrix. 2. With regards to the InAs/GaAs quantum dots (QD) the study aims in particular at elucidating QD formation by investigating samples grown with and without growth interrupt (GI). Diffraction contrast TEM shows formation of buried dots in the sample prepared with GI whereas for the sample without GI the immediate growth of GaAs after InAs inhibits diffusion and segregation of In adotoms, and no footprint of buried dots has been observed. HRTEM and HAADF show coherent QDs in the sample with GI and abrupt InAs/GaAs interfaces in the sample without GI. In executing energy electron loss spectroscopy (EELS) and geometric phase analysis (GPA) the distribution of In in InGaAs/GaAs QDs has been obtained in samples grown in the critical thickness regime for quantum dot formation. The highest In percentage achieved in the dots grown with a nominal fraction of 100% was ~70%. EELS shows variations in the In concentration within the QD structure and wetting layer 3. In the case of Er-doped Si-NCs in silica this research tries to provide an understanding of structure, composition and position of excess Si and Er in the silica matrix of materials prepared under different growth conditions and to correlate this information with the PL emission, all with the aim to find preparation routes for optimum optical efficiency for applications of this materials system in silicon photonics. High spatial correlation between Si-NCs, Er and O in the Er and Si co-implanted sample with strong indication of an Er-oxide/Si core-shell structure had been found. The lack of an Er-oxide plasmon indicates, however, that the shell structure and its interface with the SiNCs is highly defective and a likely cause for non-radiative recombination. The sample with similar excess Er and Si concentrations but prepared in a two-stage implantation and annealing process shows a 10 times improvement in the optical emission. Here no spatial correlation between Er and Si-NCs was found in core loss EELS. EELS and HAADF evidenced more highly, near-atomically dispersed Er in the matrix with no formation of a core-shell structure as compared to the co-implanted sample. No footprint of Er-silicide plasmon was observed by low loss valence band EELS investigation in the co-implanted sample.

Ternary indium aluminum nitride (InXAl1-XN) semiconductor is an attractive material with a wide-range bandgap energy varied from ultraviolet (Eg(AlN): 6.2 eV) to near infrared (Eg(InN): 0.7 eV). With tuning composition, it can be widely used to many optoelectronic device applications. In this thesis, I have studied InXAl1-XN film deposited on Si (111) substrate using natural and isotopically enriched nitrogen as reactive gas by reactive magnetron sputter epitaxy (MSE). Four series of experiments were performed, which are I. InAlN presputtering, II. InAlN sputter deposition, III. InAlN direct deposition, and IV. InAlN direct deposition using isotopically enriched nitrogen. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). The θ-2θ XRD scan confirms that the designed composition x = 0.17 of InXAl1-XN film was obtained. TEM images shows that an amorphous interlayer with a thickness ranging from 1.2 nm to 1.5 nm was formed between Si substrate and InXAl1-XN film. However, high-resolution TEM shows that the interlayer actually contains partial crystalline structures. EDX line profile indicates that the chemical composition of the amorphous interlayer is silicon nitride (SiNX). By comparing d-spacing measurement of partial crystalline structures with EDX line profile, it reveals that partial SiNX crystal is formed in the interlayer. Nonetheless, the samples (IAD01, IAD02, IAD03, IAD04), grown without presputtering procedure, contain both crystalline SiNX and InXAl1-XN embedded in the amorphous interlayer. It means that SiNX and InXAl1-XN film can be directly grown on the substrate in the beginning of deposition. Moreover, the samples (IAD01, IAD03), quenched directly after deposition, have less crystalline structures in the interlayer then the samples (IAD02, IAD04), maintained at 800℃ for 20 min.

published_or_final_version / Mechanical Engineering / Doctoral / Doctor of Philosophy

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