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<p>Single junction silicon photovoltaic cells (SJSPVCs) are unable to transform all the energy in the solar spectrum into electricity, due to the broad nature of the solar spectrum and the limits imposed by a single bandgap. Furthermore, high surface recombination velocity reduces the SJSPVC external quantum efficiency response, particularly to ultraviolet photons. It is the goal of spectral engineering to optimize the light that is incident on the cell, by down-shifting high energy photons to lower energies, for example, to improve the performance of photovoltaic cells.</p> <p>This thesis represents a study into the luminescence of ion implanted films, involving silicon nanocrystals (Si-NCs) and rare-earth ions in fused silica or silicon nitride. Quantum efficiency measurements taken with an integrating sphere were used to characterize some of the samples. Other photoluminescence (PL) characterization work was carried out with a single-wavelength laser and a collection lens normal to the sample. Variable angle spectroscopic ellipsometry (VASE) was used to estimate the optical constants of the implanted films. In secondary work, Rutherford backscattering spectrometry, time-dependent PL, infrared-PL measurements, and electrical conductivity measurements were used to characterize select samples.</p> <p>It was found that the conversion efficiency of Si-NCs in fused silica was about 1% – too low to be useful according to modeled results. However, considerable variation in the peak wavelength of the Si-NC PL was obtained, depending on the peak concentration of implanted silicon. Si-NC-type PL was also produced by low-energy implantation of oxygen into a Czochralski silicon wafer.</p> <p>Oxygen was also implanted into films of cerium-doped high-purity silicon nitride, and it was shown that the photoluminescence from these films is largely dependent on the level of oxygen doping. The internal conversion efficiency of a cerium-doped fused silica sample was found to approach 20%, which indicates that this is a promising avenue for future research.</p> <p>Finally, energy transfer was demonstrated between Si-NCs and erbium ions. The lifetime of the erbium PL appears to increase with increasing implanted silicon fluence.</p> / Master of Applied Science (MASc)

<p>The aim of third-generation photovoltaics (PV) is ultimately to achieve low-cost, high-efficiency devices. This work focused on a third-generation PV concept known as down-shifting, which is the conversion of high-energy photons into low-energy photons which are more useful for a typical solar cell. Silicon nanocrystals (Si-NCs) fabricated using electron-cyclotron resonance plasma-enhanced chemical vapour deposition (ECR-PECVD) were studied as a down-shifting material for single-junction silicon cells. A calibration was done to determine optimal deposition parameters for Si-NC formation. An experiment was then done to determine the effect of film thickness on emission, optical properties, and photoluminescence quantum efficiencies.</p> <p>Photoluminescence (PL) peaks varied depending on the stoichiometry of the films, ranging from approximately 790 nm to 850 nm. Variable-angle spectroscopic ellipsometry was used to determine the optical constants of the Si-NC films. The extinction coefficients indicated strong absorption below 500 nm, ideal for a down-shifting material. Transmission Electron Microscopy (TEM) was used to determine the size, density, and distribution of Si-NCs in two of the films. Si-NCs were seen to have an average diameter of approximately 4 nm, with larger nanocrystals more common near the surface of the film. A density of approximately 10⁵ nanocrystals per cubic micron was approximated from one of the TEM samples.</p> <p>The design and implementation of a PL quantum efficiency measurement system was achieved, using an integrating sphere to measure the absolute efficiency of Si-NC emission. Internal quantum efficiencies (IQE) as high as 1.84% and external quantum efficiencies (EQE) of up to 0.19% were measured. The EQE was found to increase with thicker films due to more intense photoluminescence; however the IQE remained relatively independent of film thickness.</p> / Master of Applied Science (MASc)