Major efforts have been spent during recent years in worldwide attempts to achieve an electronic paper technology; the common name for novel flexible displays utilizing substrates such as paper, plastics or thin metal sheets. Various kinds of technology are available that potentially will be used for an electronic paper, which differs from each other mainly with respect to the choice of active materials, substrates and manufacturing techniques. There are many applications for electronic paper technology, ranging from high-resolution displays used in electronic books to updateable large-area billboards. The latter suggests a novel electronic display function that could extend the utilization of cellulose-based paper, which is one of the most common materials ever produced by mankind, by using the paper as a thin and flexible carrier. The requirement for fast update speed in such large area applications would probably be a bit more relaxed compared to traditional display technologies, while low-power consumption and bi-stability are among the factors that should be further emphasized, together with the utilization of well-established printing techniques to enable low-cost manufacturing of the displays. The choice of active materials is therefore crucial in order to reach these objectives in reality and this paves the way for printable conjugated polymers with electrochromic properties. Chemical synthesis of these materials during the last decades has resulted in a vast variety of electrochromic polymers with custom-tailored functionality covering a broad range of optical absorption and electrical conductivities. This thesis review the studies done on the electrochemical switching of poly(3,4-ethylenedioxythiophene) (PEDOT). For this material both the electrical conductivity and the optical absorption is controlled by the oxidation state. Active matrix addressed displays that are printed on flexible substrates have been obtained by arranging electrochemical smart pixels, based on the combination of electrochemical transistors and electrochromic display cells, into cross-point matrices. The resulting polymer-based active-matrix displays are operated at low voltages and the same active material can be used in electrochemical transistors and conducting lines and in electrochromic display cells employing the electronic and the opto-electonic properties of the material, respectively. In addition to this, a switchable optical polarizer is briefly discussed. This is a device utilizing electrochromism of stretch-aligned polyaniline (PANI). The combination of two identical devices in a vertical architecture, orthogonally oriented with respect to each other, results in a filter in which the orientation of the polarized optical absorption is governed by the voltage polarity applied to the device. / Report code: LiU-TEK-LIC- 2006:18

<p>Major efforts have been spent during recent years in worldwide attempts to achieve an electronic paper technology; the common name for novel flexible displays utilizing substrates such as paper, plastics or thin metal sheets. Various kinds of technology are available that potentially will be used for an electronic paper, which differs from each other mainly with respect to the choice of active materials, substrates and manufacturing techniques. There are many applications for electronic paper technology, ranging from high-resolution displays used in electronic books to updateable large-area billboards. The latter suggests a novel electronic display function that could extend the utilization of cellulose-based paper, which is one of the most common materials ever produced by mankind, by using the paper as a thin and flexible carrier. The requirement for fast update speed in such large area applications would probably be a bit more relaxed compared to traditional display technologies, while low-power consumption and bi-stability are among the factors that should be further emphasized, together with the utilization of well-established printing techniques to enable low-cost manufacturing of the displays. The choice of active materials is therefore crucial in order to reach these objectives in reality and this paves the way for printable conjugated polymers with electrochromic properties. Chemical synthesis of these materials during the last decades has resulted in a vast variety of electrochromic polymers with custom-tailored functionality covering a broad range of optical absorption and electrical conductivities.</p><p>This thesis review the studies done on the electrochemical switching of poly(3,4-ethylenedioxythiophene) (PEDOT). For this material both the electrical conductivity and the optical absorption is controlled by the oxidation state. Active matrix addressed displays that are printed on flexible substrates have been obtained by arranging electrochemical smart pixels, based on the combination of electrochemical transistors and electrochromic display cells, into cross-point matrices. The resulting polymer-based active-matrix displays are operated at low voltages and the same active material can be used in electrochemical transistors and conducting lines and in electrochromic display cells employing the electronic and the opto-electonic properties of the material, respectively. In addition to this, a switchable optical polarizer is briefly discussed. This is a device utilizing electrochromism of stretch-aligned polyaniline (PANI). The combination of two identical devices in a vertical architecture, orthogonally oriented with respect to each other, results in a filter in which the orientation of the polarized optical absorption is governed by the voltage polarity applied to the device.</p> / Report code: LiU-TEK-LIC- 2006:18

This work investigates the design, system integration, optimization, and evaluation of amorphous silicon (a-Si:H) active matrix flat panel imagers (AMFPI) for bio-medical applications. Here, two hybrid active pixel sensor (H-APS) designs are introduced that improve the dynamic range while maintaining the desirable attributes of high speed and low noise readout. Also presented is a systematic approach for noise analysis of thin film transistors (TFT) and pixel circuits in which circuit analysis techniques and TFT noise models are combined to evaluate circuit noise performance. We also explore different options of system integration and present measurement results of a high fill-factor (HFF) array with segmented photodiode.

This work investigates the design, system integration, optimization, and evaluation of amorphous silicon (a-Si:H) active matrix flat panel imagers (AMFPI) for bio-medical applications. Here, two hybrid active pixel sensor (H-APS) designs are introduced that improve the dynamic range while maintaining the desirable attributes of high speed and low noise readout. Also presented is a systematic approach for noise analysis of thin film transistors (TFT) and pixel circuits in which circuit analysis techniques and TFT noise models are combined to evaluate circuit noise performance. We also explore different options of system integration and present measurement results of a high fill-factor (HFF) array with segmented photodiode.

Organic electronics has evolved into a well-established research field thanks to major progresses in material sciences during recent decades. More attention was paid to this research field when “the discovery and development of conductive polymers” was awarded the Nobel Prize in Chemistry in 2000. Electronic devices that rely on tailor-made material functionalities, the ability of solution processing and low-cost manufacturing on flexible substrates by traditional printing techniques are among the key features in organic electronics. The common theme while exploring organic electronics, and the focus of this thesis, is that (semi-)conducting polymers serve as active materials to define the principle of operation in devices. This thesis reviews two kinds of organic electronic devices. The first part describes electrochemical devices based on conducting polymers. Active matrix addressed displays that are printed on flexible substrates have been obtained by arranging electrochemical smart pixels, based on the combination of electrochemical transistors and electrochromic display cells, into cross-point matrices. The resulting polymer-based active-matrix displays are operated at low voltages and the same active material is used in the electrochemical transistors as well as in the electrochromic display cells, simply by employing the opto-electronic properties of the material. In addition to this first part, a switchable optical polarizer based on electrochromism in a stretch-aligned conducting polymer is described. The second part reports switchable charge traps in polymer diodes. Here, a device based on a solid-state blend of a conjugated polymer and a photochromic molecule has been demonstrated. The solid state blend, sandwiched between two electrodes, provide a polymer diode that allows reversible current modulation between two different charge transport mechanisms via externally triggered switching of the charge trap density.

Recently, active matrix flat-panel displays are widely used in consumer electronic products. With increasing popularity of flat-panel displays, market competition becomes more intense and demands for high performance flat-panel displays are increasing. Low-temperature polysilicon (LTPS) with higher mobility, as well as drive current can integrate electric circuit, such as controllers and memory on glass substrate of display to achieve the purpose of system on panel (SOP). Thus, flat-panel displays can be more compact, while reducing reliability issues and lowering production costs. In this dissertation, we studied the nonvolatile memory for system on panel applications and reducing cost of memory by increasing the memory density or reducing the processing steps. Therefore, we proposed several modes of operation in nonvolatile memory. First, we use channel hot-electron (CHE) to inject electrons into the nitride layer that¡¦s above source or drain sides of SONOS thin film transistor (TFT). Thus, we can increase the memory density by storing two-bit state in a memory cell. In this study, the two-bit memory effect is clearly observed for devices with a shorter gate length after CHE programming; however, the two-bit memory effect is absent in devices with a longer gate length. The gate-length-dependent two-bit memory effect is related to the location of injected electrons in the nitride layer. When electrons are injected into the nitride layer above the channel, they can create an additional energy barrier in the channel thus increasing the threshold voltage of the device to perform the programming operations. However, if electrons are injected into the depletion region at the P-N junction between the drain and the channel, the energy barrier induced by electrons is not significant when exchanging the source and drain electrodes to measure the memory status, and the program effect is not as significant. When the channel length is shorten, the built-in potential between the source and the channel can be decreased, the energy barrier caused by programmed electrons can affect electrons in the channel and increase the threshold voltage. Therefore, the two-bit memory effect can be seen in devices with the shorter gate length after CHE programming. Secondly, we stored charges in the body of the thin film transistor to make the conventional thin-film transistors become a non-volatile memory. This method does not need a floating gate or a tunneling oxide in the memory cell; therefore the memory cost can be reduced. In this study, we used trap-assisted band-to-band thermionic field emission enhanced by self-heating in TFT to produce electron-hole pairs. The hole will be separated by a vertical field under the gate and be injected into the body of TFT to complete the programming operation. The erasing operation is performed by applying a lateral electric field between the source/drain to remove holes in the body of TFT. Thirdly, we proposed an edge-FN tunneling method to allow SONOS TFT possess not only a pixel switch but also a two-bit nonvolatile memory function in a display panel, thus causing the memory density to increase. In this study, we used a channel FN tunneling to program the SONOS TFT. Because the electric field in the gate-to-drain overlap region is larger than that in the channel region, it will cause a smoother electron injection into the nitride layer inside of the gate-to-drain overlap region, which also increases the gate-induced drain leakage (GIDL) current. The edge-FN tunneling method is used to erase electrons in the gate-to-drain overlap region, by doing so, the GIDL current has decreased. The memory status at the source/drain side is determined by the corresponding GIDL current of the SONOS TFT. Fourthly, we stored electrons in the nitride layer at source, channel, and drain regions of SONOS TFT to make sure that TFT possess a three-bit memory effect in a unitary cell, which also allows the memory density to increase significantly. In this study, programming and erasing operations in the source/drain region are performed by channel hot-electron injection and edge-FN tunneling method, while that in the channel region are accomplished by channel FN tunneling. The memory status in the source/drain is determined by the corresponding GIDL current, while that in the channel region by threshold voltage of the device The memory density for the device operated by proposed method can be further increased. In addition, if we store a number of N different types of electrons in those three regions mentioned above, there are N3 status can be stored in a memory cell. The memory density can beyond conventional multi-level-cell (MLC) flash memory. Two-bit memory effect per cell in a MLC flash memory can be achieved by storing four quantitative electrons in the floating gate of the memory device. If we store four quantitative electrons in the nitride layer at source, channel, and drain regions of SONOS TFT, we can obtain 64 memory states or 6-bit memory effect in a memory cell. Thus, the proposed concept is promising to storage the messages in a memory cell beyond four-bit.

Ces travaux de thèse sont une contribution au projet de réalisation de matrices actives photoniques dans le cadre de la confection de lunettes à réalité augmentée. Un état de l’art des dispositifs actuels nous a permis de montrer l’encombrement engendré par l’utilisation d’un projecteur situé sur la monture. Pour s’en abstenir, l’utilisation du verre de lunette comme source d’image est limitée par la transparence des matrices actives classiques adressant un signal électrique avec des matériaux métalliques. L’utilisation de la photonique pour adresser chacun des pixels avec un signal optique guidée dans des matériaux diélectriques pourrait permettre d’en optimiser la transmission. Dans ce contexte, nos travaux concernent l’étude et la réalisation expérimentale de dispositifs incluant un guide d’onde et un système d’extraction activable. L'objectif est, d'une part, de sélectionner les matériaux et procédés technologiques adaptés pour former des lignes d'adressage photoniques et, d'autre part, d'associer les composants réalisés avec des éléments actifs permettant d’initier ou non l’extraction d’un guide d’onde. Le dispositif doit être transparent dans le visible afin de respecter les contraintes liées au secteur de l'optique ophtalmique. Dans un premier axe de recherche, des réseaux de diffraction micrométriques sont réalisés grâce au développement d’un procédé de photolithographie sur verre avant d’être imprégnés de cristaux liquides via la formation de cellules. La caractérisation, en transmission, des dispositifs formés permet d’étudier la capacité des molécules de cristal liquide à moduler l'intensité de diffraction pour passer d’un état diffractant à un état non diffractant. Une extinction de la diffraction de 90 à 99,9% selon l'épaisseur des structures est finalement mesurée avec l’application d’un champ électrique dans la cellule. La comparaison de ces résultats avec des calculs numériques permet de confirmer l’alignement des molécules à l’intérieur de la structure ainsi que leurs mobilités sous l’effet d’un champ électrique. Ce principe est, dans un second temps, étudié avec des composants photoniques et la réalisation de GMRF (Guided Mode Resonance Filter), association d'un guide d'onde et d'un réseau de diffraction. Des matériaux issus de la chimie sol-gel sont utilisés pour former des guides d'onde planaires et le développement d’un procédé de lithographie par nano-impression nous a permis d’obtenir les structures nanométriques requises. Divers bancs de caractérisation optique sont alors mis en place pour aboutir à plusieurs méthodes de couplage permettant d’obtenir une onde guidée dans le visible. Finalement, nous avons mesuré une modulation de 90% de l’intensité extraite par le GMRF via l’activation des cristaux liquides. / Ces travaux de thèse sont une contribution au projet de réalisation de matrices actives photoniques dans le cadre de la confection de lunettes à réalité augmentée. Un état de l’art des dispositifs actuels nous a permis de montrer l’encombrement engendré par l’utilisation d’un projecteur situé sur la monture. Pour s’en abstenir, l’utilisation du verre de lunette comme source d’image est limitée par la transparence des matrices actives classiques adressant un signal électrique avec des matériaux métalliques. L’utilisation de la photonique pour adresser chacun des pixels avec un signal optique guidée dans des matériaux diélectriques pourrait permettre d’en optimiser la transmission. Dans ce contexte, nos travaux concernent l’étude et la réalisation expérimentale de dispositifs incluant un guide d’onde et un système d’extraction activable. L'objectif est, d'une part, de sélectionner les matériaux et procédés technologiques adaptés pour former des lignes d'adressage photoniques et, d'autre part, d'associer les composants réalisés avec des éléments actifs permettant d’initier ou non l’extraction d’un guide d’onde. Le dispositif doit être transparent dans le visible afin de respecter les contraintes liées au secteur de l'optique ophtalmique. Dans un premier axe de recherche, des réseaux de diffraction micrométriques sont réalisés grâce au développement d’un procédé de photolithographie sur verre avant d’être imprégnés de cristaux liquides via la formation de cellules. La caractérisation, en transmission, des dispositifs formés permet d’étudier la capacité des molécules de cristal liquide à moduler l'intensité de diffraction pour passer d’un état diffractant à un état non diffractant. Une extinction de la diffraction de 90 à 99,9% selon l'épaisseur des structures est finalement mesurée avec l’application d’un champ électrique dans la cellule. La comparaison de ces résultats avec des calculs numériques permet de confirmer l’alignement des molécules à l’intérieur de la structure ainsi que leurs mobilités sous l’effet d’un champ électrique. Ce principe est, dans un second temps, étudié avec des composants photoniques et la réalisation de GMRF (Guided Mode Resonance Filter), association d'un guide d'onde et d'un réseau de diffraction. Des matériaux issus de la chimie sol-gel sont utilisés pour former des guides d'onde planaires et le développement d’un procédé de lithographie par nano-impression nous a permis d’obtenir les structures nanométriques requises. Divers bancs de caractérisation optique sont alors mis en place pour aboutir à plusieurs méthodes de couplage permettant d’obtenir une onde guidée dans le visible. Finalement, nous avons mesuré une modulation de 90% de l’intensité extraite par le GMRF via l’activation des cristaux liquides.