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Protection, Control, and Auxiliary Power of Medium-Voltage High-Frequency SiC DevicesSun, Keyao 09 June 2021 (has links)
Due to the superior characteristics compared to its silicon (Si) counterpart, the wide bandgap (WBG) semiconductor enables next-generation power electronics systems with higher efficiency and higher power density. With higher blocking voltage available, WBG devices, especially the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), have been widely explored in various medium-voltage (MV) applications in both industry and academia. However, due to the high di/dt and high dv/dt during the switching transient, potential overcurrent, overvoltage, and gate failure can greatly reduce the reliability of implementing SiC MOSFETs in an MV system.
By utilizing the parasitic inductance between the Kelvin- and the power-source terminal, a short-circuit (SC) and overload (OL) dual-protection scheme is proposed for overcurrent protection. A full design procedure and reliability analysis are given for SC circuit design. A novel OL circuit is proposed to protect OL faults at the gate-driver level. The protection procedure can detect an SC fault within 50 nanoseconds and protect the device within 1.1 microsecond. The proposed method is a simple and effective solution for the potential overcurrent problem of the SiC MOSFET.
For SiC MOSFETs in series-connection, the unbalanced voltages can result in system failure due to device breakdown or unbalanced thermal stresses. By injecting current during the turn-off transient, an active dv/dt control method is used for voltage balancing. A 6 kV phase-leg using eight 1.7 kV SiC MOSFETs in series-connection has been tested with voltage balanced accurately. Modeling of the stacked SiC MOSFET with active dv/dt control is also done to summarize the design methodology for an effective and stable system. This method provides a low-loss and compact solution for overvoltage problems when MV SiC MOSFETs are connected in series.
Furthermore, a scalable auxiliary power network is proposed to prevent gate failure caused by unstable gate voltage or EMI interference. The two-stage auxiliary power network (APN) architecture includes a wireless power transfer (WPT) converter supplied by a grounded low voltage dc bus, a high step-down-ratio (HSD) converter powered from dc-link capacitors, and a battery-based mini-UPS backup power supply. The auxiliary-power-only pre-charge and discharge circuits are also designed for a 6 kV power electronics building block (PEBB). The proposed architecture provides a general solution of a scalable and reliable auxiliary power network for the SiC-MOSFET-based MV converter.
For the WPT converter, a multi-objective optimization on efficiency, EMI mitigation, and high voltage insulation capability have been proposed. Specifically, a series-series-CL topology is proposed for the WPT converter. With the optimization and new topology, a 120 W, 48 V to 48 V WPT converter has been tested to be a reliable part of the auxiliary power network.
For the HSD converter, a novel unidirectional voltage-balancing circuit is proposed and connected in an interleaved manner, which provides a fully modular and scalable solution. A ``linear regulator + buck" solution is proposed to be an integrated on-board auxiliary power supply. A 6 kV to 45 V, 100 W converter prototype is built and tested to be another critical part of the auxiliary power network. / Doctor of Philosophy / The wide bandgap semiconductor enables next-generation power electronics systems with higher efficiency and higher power density which will reduce the space, weight, and cost for power supply and conversion systems, especially for renewable energy. However, by pushing the system voltage level higher to medium-voltage of tens of kilovolts, although the system has higher efficiency and simpler control, the reliability drops. This dissertation, therefore, focusing on solving the possible overcurrent, overvoltage, and gate failure issues of the power electronics system that is caused by the high voltage and high electromagnetic interference environment. By utilizing the inductance of the device, a dual-protection method is proposed to prevent the overcurrent problem. The overcurrent fault can be detected within tens of nanoseconds so that the device will not be destroyed because of the huge fault current. When multiple devices are connected in series to hold higher voltage, the voltage sharing between different devices becomes another issue. The proposed modeling and control method for series-connected devices can balance the shared voltage, and make the control system stable so that no overvoltage problem will happen due to the non-evenly distributed voltages. Besides the possible overcurrent and overvoltage problems, losing control of the devices due to the unreliable auxiliary power supply is another issue. This dissertation proposed a scalable auxiliary power network with high efficiency, high immunity to electromagnetic interference, and high reliability. In this network, a wireless power transfer converter is designed to provide enough insulation and isolation capability, while a switched capacitor converter is designed to transfer voltage from several kilovolts to tens of volts. With the proposed overcurrent protection method, voltage sharing control, and reliable auxiliary power network, systems utilizing medium-voltage wide-bandgap semiconductor will have higher reliability to be implemented for different applications.
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High-frequency Current-transformer Based Auxiliary Power Supply for SiC-based Medium Voltage Converter SystemsYan, Ning January 2020 (has links)
Auxiliary power supply (APS) plays a key role in ensuring the safe operation of the main circuit elements including gate drivers, sensors, controllers, etc. in medium voltage (MV) silicon carbide (SiC)-based converter systems. Such a converter requires APS to have high insulation capability, low common-mode coupling capacitance (Ccm ), and high-power density. Furthermore, considering the lifetime and simplicity of the auxiliary power supply system design in the MV converter, partial discharge (PD) free and multi-load driving ability are the additional two factors that need to be addressed in the design. However, today’s state-of-the-art products have either low power rating or bulky designs, which does not satisfy the demands. To improve the current designs, this thesis presents a 1 MHz isolated APS design using gallium nitride (GaN) devices with MV insulation reinforcement.
By adopting LCCL-LC resonant topology, the proposed APS is able to supply multiple loads simultaneously and realize zero voltage switching (ZVS) at any load conditions. Since high reliability under faulty load conditions is also an important feature for APS in MV converter, the secondary side circuit of APS is designed as a regulated stage. To achieve MV insulation (> 20 kV) as well as low Ccm value (< 5 pF), a current-based transformer with a single turn structure using MV insulation wire is designed. Furthermore, by introducing different insulated materials and shielding structures, the APS is capable to achieve different partial discharge inception voltages (PDIV). In this thesis, the transformer design, resonant converter design, and insulation strategies will be detailly explained and verified by experiment results.
Overall, this proposed APS is capable to supply multiple loads simultaneously with a maximum power of 120 W for the sending side and 20 W for each receiving side in a compact form factor. ZVS can be realized regardless of load conditions. Based on different insulation materials, two different receiving sides were built. Both of them can achieve a breakdown voltage of over 20 kV. The air-insulated solution can achieve a PDIV of 6 kV with Ccm of 1.2 pF. The silicone-insulated solution can achieve a PDIV of 17 kV with Ccm of 3.9 pF. / M.S. / Recently, 10 kV silicon carbide (SiC) MOSFET receives strong attention for medium voltage applications. Asit can switch at very high speed, e.g. > 50 V/ns, the converter system can operate at higher switching frequency condition with very small switching losses compared to silicon (Si) IGBT [8]. However, the fast dv/dt noise also creates the common mode current via coupling capacitors distributed inside the converter system, thereby introducing lots of electromagnetic interference (EMI) issues. Such issues typically occur within the gate driver power supplies due to the high dv/dt noises across the input and output of the supply. Therefore, the ultra-small coupling capacitor (<5 pF) of a gate driver power supply is strongly desired.[37]
To satisfy the APS demands for high power modular converter system, a solution is proposed in this thesis. This work investigates the design of 1 MHz isolated APS using gallium nitride (GaN) devices with medium voltage insulation reinforcement. By increasing switching frequency, the overall converter size could be reduced dramatically. To achieve a low Ccm value and medium voltage insulation of the system, a current-based transformer with a single turn on the sending side is designed. By adopting LCCL-LC resonant topology, a current source is formed as the output of sending side circuity, so it can drive multiple loads importantly with a maximum of 120 W. At the same time, ZVS can use realized with different load conditions. The receiving side is a regulated stage, so the output voltage can be easily adjusted and it can operate in a load fault condition. Different insulation solutions will be introduced and their effect on Ccm will be discussed. To further reduce Ccm, shielding will be introduced. Overall, this proposed APS can achieve a breakdown voltage of over 20 kV and PDIV up to 16.6 kV with Ccm<5 pF. Besides, multi-load driving ability is able to achieve with a maximum of 120 W. ZVS can be realized. In the end, the experiment results will be provided.
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Challenges and Solutions of Applying Medium-Voltage Silicon Carbide Devices in Medium and High-Voltage SystemsHu, Boxue January 2019 (has links)
No description available.
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Magnetic and Dielectric Design of Auxiliary Power Supply for HVDC Applications : A high-frequency transformer with high power transfer capability and high voltage electrical insulation / Magnetisk och Dielektrisk Konstruktion av Hjälpkraftaggregat för HVDC-Tillämpningar : En högfrekvenstransformator med hög effektöverföringsförmåga och isolation för hög spänningJohansson, Henrik January 2022 (has links)
It is anticipated that massive amounts of energy will be transferred long distances via High-Voltage Direct Current (HVDC) links in the future and the prospect of having meshed HVDC grids is envisioned, for example the European super grid. Such a power system would benefit greatly if HVDC circuit breakers could reliably clear faults within the HVDC network. Different ways to break large direct currents have been proposed throughout the years and one distinguished concept is based on generating an artificial zero-crossing of the current and pass it through a mechanical interrupter as it opens. This concept is implemented in the Voltage-Source Converter Assisted Resonant Current (VARC) circuit breakers developed at Scibreak which require auxiliary power from an off-line supply unit to energize their electronic equipment. This thesis continuous and builds on research previously carried out at Scibreak on a special Auxiliary Power Supply (APS) concept for 525 kV HVDC applications. In essence, it is a unique modularized high-frequency transformer whose power transfer and voltage withstand capabilities are the cornerstones of its design. The APS must supply an adequate amount of power to drive the VARC circuit breakers with preferably high efficiency while also fulfilling the considerable insulation demands of HVDC grids. A feasibility study of this APS concept was carried out by building a parametric 3D model in the Finite Element Analysis (FEA) software Ansys Maxwell which includes all parts that affect both its magnetic and electrical properties. The initial model reproduced experimental results from a magnetic APS prototype and was then used to explore a plethora of different geometries and materials with regards to its magnetic and dielectric designs. Specific design candidates were selected for more in-depth analysis and experimental work. All obtained results together with knowledge of commercially available materials show that the APS holds great promise to meet the necessary design criteria for its HVDC applications. Its dielectric design is well suited to continuously handle an operating voltage of 525 kV DC, meet the required impulse voltage levels of the grid and properly shield the magnetic structure. It is expected to have a long life time where the design criterion was always 30 years in this work. Moreover, its magnetic design is anticipated to supply a few kW of active power with efficiencies between 80 to 95 percent and manage a continuous operating time of 5 min. Both design aspects are interchangeable to a decent extent in order to cope with one another and produce a compromised design. / Det förväntas att enorma mängder energi kommer överföras långa sträckor med Högspänd Likström (HVDC) i framtiden och blivande HVDC-nät håller på att föreställas, till exempel det europeiska superelnätet. Ett sådant kraftsystem skulle ha stor nytta av HVDC-brytare som tillförlitligt kan bryta felströmmar inom HVDC-nätet. Olika sätt att bryta stora likströmmar har föreslagits med åren och ett distinkt koncept bygger på att generera en artificiell nollgenomgång av strömmen och föra den genom en mekanisk brytarkammare när den öppnas. Detta koncept är implementerat i de så kallade VARC-strömbrytarna som utvecklas hos Scibreak, vilka kräver hjälpmatning av effekt från en extern försörjningsenhet för att driva deras elektroniska utrustning. Denna avhandling fortsätter och bygger vidare på forskning som tidigare utförts hos Scibreak på ett speciellt Hjälpmatningskoncept (APS) för 525 kV HVDC-tillämpningar. I huvudsak är det en unik modulariserad högfrekvenstransformator vars kraftöverföring och spänningståligheter är huvudfokusen i dess design. Hjälpmatningen måste kunna leverera en tillräcklig mängd effekt för att driva VARC-brytarna med företrädesvis hög verkningsgrad, samtidigt som den ska uppfylla de betydande isolationskraven för HVDC-nät. En genomförbarhetsstudie av detta APS-koncept gjordes genom att bygga en parametrisk 3D modell i Finita Elementmetodsprogramvaran (FEM) Ansys Maxwell som inkluderar alla delar som påverkar både dess magnetiska och elektriska egenskaper. Den initiala modellen reproducerade experimentella resultat från en magnetisk APS-prototyp och användes sedan för att utforska en uppsjö av olika geometrier och material med avseende på dess magnetiska och dielektriska konstruktioner. Specifika designkandidater valdes ut för mer djupgående analys och experimentiellt arbete. Alla erhållna resultat tillsammans med kunskap om kommersiellt tillgängliga material visar att APS:n har stora möjligheter att uppfylla alla nödvändiga kriterier för sina HVDC-tillämpningar. Dess dielektriska design är väl lämpad för att kontinuerligt hantera en driftspänning på 525 kV DC, möta de erforderliga stötspänningståligheterna i nätet och ordentligt skydda den magnetiska strukturen. Den förväntas ha en lång livstid där designkriteriet alltid var 30 år i detta arbete. Dessutom förväntas dess magnetiska design leverera några kW aktiv effekt med verkningsgrader mellan 80 till 95 procent och klara en kontinuerlig drifttid på 5 min. Båda designaspekterna kan justeras i en någorlunda utsträckning för möta de krav som ställs från varandra och producera en kompromissad design.
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Projeto e desenvolvimento de fontes auxiliares para transformadores de estado sólido / Design and development of auxiliary power supply for solid state transformersKehler, Leandro Becker 31 August 2015 (has links)
This master thesis presents the development of an auxiliary power supply to provide energy to sensors, gate drivers, instrumentation circuits and control of a three-stage Solid State Transformer (SST). These devices require an insulated power supply of ±15V and 5V. For reason of reliability and modularity, a distributed auxiliary source is proposed. Thus, it is necessary a power supply to provide energy to the low voltage (LV) side and another to the medium voltage (MV) side. With this proposal, the auxiliary power supply does not need to have the same galvanic insulation of the SST, 25kV. However, a local power supply must operate at high voltage levels and, consequently, contain a high step-down voltage gain. Relative to LV side, the most generally used topologies as an auxiliary power supply are discussed. However, these topologies cannot be used at the MV converters, due to the high voltage stress levels involved. A study of topologies used on medium and high voltage and which enable to reach a high step-down voltage gain is realized, and two interesting topologies for this application were found. One of them uses a Flying capacitor converter connected in cascade with a Double-Ended Flyback converter. The Flying capacitor converter lowers the DC bus voltage in a controlled manner to low voltage levels. So the Double-ended Flyback converter operates in LV and provides the insulated outputs to command circuits of SST. The other topology is a unidirectional four-level NPC converter operating as Double-ended Flyback converter. For this case, a modulation strategy that allows the converter to reach a high step-down voltage gain was also proposed. These topologies were evaluated and the one which showed the best result was the four-level Double-ended Flyback converter. This converter was implemented and the experimental results prove to be effective. For the LV side, a Half-bridge LLC resonant converter as auxiliary power supply was used. This converter operates in ZVS and performs the output voltage regulation through the operating frequency variation. The experimental results of this converter are also presented. / Este trabalho de mestrado apresenta o desenvolvimento de fontes auxiliares para alimentar sensores, circuitos de comando, instrumentação e o controle de um Transformador de Estado Sólido (SST) de três estágios. Estes dispositivos necessitam de alimentação isolada com tensões de ±15V e 5V e por questões de confiabilidade e modularidade, propõe-se a utilização de fontes auxiliares distribuídas. Assim, emprega-se uma fonte auxiliar para alimentar o lado de média tensão (MT) e outra para alimentar o lado de baixa tensão (BT). Com essa proposta, as fontes auxiliares não necessitam ter a mesma isolação galvânica do SST, 25kV. Entretanto, uma das fontes locais deve operar em níveis de tensão elevados e, por consequência, apresentar baixo ganho estático. No lado de BT, as principais topologias normalmente utilizadas como fonte auxiliar são discutidas. No entanto, devido aos altos níveis de tensão envolvidos, estas topologias não podem ser aplicadas ao conversor que opera em MT. Um estudo sobre topologias aplicadas a média tensão e que possibilitam alcançar um baixo ganho estático é realizado, sendo que duas topologias se mostram interessantes para esta aplicação. Uma consiste na utilização de um conversor de capacitores flutuantes conectado em cascata com um conversor Double-Ended Flyback. O conversor de capacitores flutuantes rebaixa a tensão do barramento CC, de forma controlada, para baixa tensão. Assim o Double-Ended Flyback opera em BT e fornece as saídas isoladas para alimentar os circuitos de comando do SST. A outra topologia trata-se de um conversor NPC de quatro níveis unidirecional operando como conversor Double-Ended Flyback. Para este caso, também foi proposta uma estratégia de modulação que permite o conversor alcançar o baixo ganho estático. Essas topologias foram avaliadas, apresentando melhor resultado a esta aplicação o conversor Double-ended Flyback de quatro níveis, conforme será demonstrado neste trabalho. Esse conversor foi implementado e os resultados experimentais comprovam o seu funcionamento. Para a fonte do lado de BT utilizou-se um conversor Half-Bridge LLC ressonante que opera em ZVS e realiza a regulação da tensão de saída pela variação da frequência de operação. Os resultados experimentais deste conversor também são apresentados.
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