<p>An electrolytic cell was designed and constructed for the preparation of TiO2 nanotubes. Conditions of anodic oxidation were established to reproducibly prepare TiO2 nanotubes of average length 35-50 &mu / m vertically orientated relative to the plain of a pure titanium metal sheet. A non-aqueous solution of ethylene glycol containing small percentage of ammonium fluoride was used as the electrolyte with an applied voltage of 60 V. The morphology and dimensions of the nanotube arrays were studied by scanning (SEM) and transmission (TEM) electron microscopy. The effect of calcination under different conditions of temperature and atmosphere (nitrogen, argon and air) were assessed by both X-ray diffraction (XRD) and cyclic voltammetry (CV). Cyclic voltammetry studies were made possible by construction of a specially designed titanium electrode upon which the nanotubes were prepared. CV studies established a positive correlation between crystallinity and conductivity of the nanotubes. Doping of the nanotubes with nitrogen and carbon was established by elemental analysis, X-ray photoelectron spectroscopy (XPS) and Rutherford back scattering (RBS). The effect of nonmetal doping on the band gap of the TiO2 nanotubes was investigated by diffuse reflectance spectroscopy (DRS).</p>

Hydrogen is added to Graphene in various compositions and configurations to modify the band structure to produce a suitable band gap for microelectronic applications. Optical and vibrational spectra are calculated as a means of characterization. Calculations performed using DFT and Quantum Espresso. / UOIT

We demonstrate electromagnetically-induced anomalous quantum dynamics of an exciton in a photonic band gap (PBG) - quantum well (QW) hetero-structure. Within the engineered electromagnetic vacuum of the PBG material, the exciton can propagate through the QW by the emission and re-absorption of virtual photons in addition to the conventional electronic hopping mechanism. When the exciton wavevector and recombination energy coincide nearly with a photonic band edge, the exciton kinetic energy is lowered by 1-10meV through coherent radiative hopping. This capture of the exciton by the photonic band edge is accompanied by strong electromagnetic dressing in which the exciton's renormalized effective mass is 4-5 orders of magnitude smaller than in the absence of the PBG environment. This dressed exciton exhibits a long radiative lifetime characteristic of a photon-atom bound state and is robust to phonon-assisted, re-combinative decay. By inheriting properties of the PBG electromagnetic vacuum, the bound electron-hole pair becomes a stable, ultra-mobile quantum excitation. Unlike traditional exciton-polariton modes created by placing a QW in a one-dimensional optical cavity, our PBG-QW excitons exhibit strong coupling to optical modes and retain a long lifetime. This is crucial for unambiguous observation of quantum coherence effects such as Bose-Einstein condensation. We present a model for the equilibrium quantum statistics of a condensate of repulsively interacting bosons in a two-dimensional trap. Particle correlations in the ground state are treated exactly, whereas interactions with excited particles are treated in a generalized Bogoliubov mean-field theory. This leads to a fundamental physical picture for condensation of interacting bosons through an anharmonic oscillator ground state coupled to excited Bogoliubov quasiparticles in which the quantum number statistics of condensate particles emerges self-consistently. Our anharmonic oscillator model for the exciton ground state manifold goes beyond the conceptual framework of traditional Bogoliubov theory. Below the Bose-Einstein condensation temperature, our model exhibits a crossover from particle bunching to Poissonian statistics and finally antibunching as temperature is lowered or as the trapping area is decreased. When applied to Bose condensation of long-lived dressed excitons in a photonic band gap material, our model suggests that this system may serve as a novel tunable source for non-classical states of light.

This dissertation is focused on design of compact electromagnetic magnetic band-gap structures (EBG). Several popular compact techniques are introduced and analyzed with equivalent surface impedance model. A novel compact EBG structure is investigated. Compared to the conventional uniplanar compact photonic band gap (UC-PBG) structure, a size reduction of 64.7% is achieved. A distinctive band gap is observed at 2.45 GHz with around 100 MHz bandwidth and zero reflection phase. Antenna applications of this novel EBG structure, including EBG patch antenna and EBG antenna array, have been presented. Simulation results further verify its characteristic of suppressing surface waves. For the EBG patch antenna, a more focused radiation pattern is obtained compared to a normal patch antenna. For an antenna array, the presence of EBG structure reduces the mutual coupling between the two radiating elements by 6 dB.

We demonstrate electromagnetically-induced anomalous quantum dynamics of an exciton in a photonic band gap (PBG) - quantum well (QW) hetero-structure. Within the engineered electromagnetic vacuum of the PBG material, the exciton can propagate through the QW by the emission and re-absorption of virtual photons in addition to the conventional electronic hopping mechanism. When the exciton wavevector and recombination energy coincide nearly with a photonic band edge, the exciton kinetic energy is lowered by 1-10meV through coherent radiative hopping. This capture of the exciton by the photonic band edge is accompanied by strong electromagnetic dressing in which the exciton's renormalized effective mass is 4-5 orders of magnitude smaller than in the absence of the PBG environment. This dressed exciton exhibits a long radiative lifetime characteristic of a photon-atom bound state and is robust to phonon-assisted, re-combinative decay. By inheriting properties of the PBG electromagnetic vacuum, the bound electron-hole pair becomes a stable, ultra-mobile quantum excitation. Unlike traditional exciton-polariton modes created by placing a QW in a one-dimensional optical cavity, our PBG-QW excitons exhibit strong coupling to optical modes and retain a long lifetime. This is crucial for unambiguous observation of quantum coherence effects such as Bose-Einstein condensation. We present a model for the equilibrium quantum statistics of a condensate of repulsively interacting bosons in a two-dimensional trap. Particle correlations in the ground state are treated exactly, whereas interactions with excited particles are treated in a generalized Bogoliubov mean-field theory. This leads to a fundamental physical picture for condensation of interacting bosons through an anharmonic oscillator ground state coupled to excited Bogoliubov quasiparticles in which the quantum number statistics of condensate particles emerges self-consistently. Our anharmonic oscillator model for the exciton ground state manifold goes beyond the conceptual framework of traditional Bogoliubov theory. Below the Bose-Einstein condensation temperature, our model exhibits a crossover from particle bunching to Poissonian statistics and finally antibunching as temperature is lowered or as the trapping area is decreased. When applied to Bose condensation of long-lived dressed excitons in a photonic band gap material, our model suggests that this system may serve as a novel tunable source for non-classical states of light.

The development and fabrication of silicon-based phononic band gap crystals has been gaining interest since phononic band gap crystals have implications in fundamental science and display the potential for application in engineering by providing a relatively new platform for the realization of sensors and signal processing elements. The seminal study of phononic band gap phenomenon for classical elastic wave localization in structures with periodicity in two- or three-physical dimensions occurred in the early 1990’s. Micro-integration of silicon devices that leverage this phenomenon followed from the mid-2000’s until the present. The reported micro-integration relies on exotic piezoelectric transduction, phononic band gap crystals that are etched into semi-infinite or finite-thickness slabs which support surface or slab waves, phononic band gap crystals of numerous lattice constants in dimension and phononic band gap crystal truncation by homogeneous mediums or piezoelectric transducers. The thesis reports, to the best of the author's knowledge, for the first time, the theory, design methodology and experiment of an electrostatically actuated silicon-plate phononic band gap quasi-crystal architecture, which may serve as a platform for the development of a new generation of silicon-integrated sensors, signal processing elements and improved mechanical systems. Electrostatic actuation mitigates the utilization of piezoelectric transducers and provides action at a distance type forces so that the phononic band gap quasi-crystal edges may be free standing for potentially reduced anchor and substrate mode loss and improved energy confinement compared with traditional surface and slab wave phononic band gap crystals. The proposed phononic band gap quasi-crystal architecture is physically scaled for fabrication as MEMS in a silicon-on-insulator process. Reasonable experimental verification of the model of the electrostatically actuated phononic band gap quasi-crystal architecture is obtained through extensive dynamic harmonic analysis and mode shape topography measurements utilizing optical non-destructive laser-Doppler velocimetry. We have utilized our devices to obtain fundamental information regarding novel transduction mechanisms and behavioral characteristics of the phononic band gap quasi-crystal architecture. Applicability of the phononic band gap quasi-crystal architecture to physical temperature sensors is demonstrated experimentally. Vibration stabilized resonators are demonstrated numerically.

This work evaluates two SiGe BiCMOS technology platforms as candidates for implementing extreme environment capable circuitry, with an emphasis on applications requiring high sensitivity and low noise. In Chapter 1, applications requiring extreme environment sensing circuitry are briefly reviewed and the motivation for undertaking this study is outlined. A case is then presented for the use of SiGe BiCMOS technology to meet this need, documenting the benefits of operating SiGe HBTs at cryogenic temperatures. Chapter 1 concludes with a brief description of device radiation effects in bipolar and CMOS devices, and a basic overview of noise in semiconductor devices and electronic components. Chapter 2 further elaborates on a specific application requiring low-noise circuitry capable of operating at cryogenic temperatures and proposes a number of variants of band-gap reference circuits for use in said system. Detailed simulation and theoretical analysis of the proposed circuits are presented and compared with measurements, validating the techniques used in the proposed designs and emphasizing the need for further understanding of device level low-temperature noise phenomena. Chapter 3 evaluates the feasibility of using a SiGe BiCMOS process, whose response to ionizing radiation was previously uncharacterized, for use in unshielded electronic systems needed for exploration of deep space planets or moons, specifically targeting Europa mission requirements. Measured total ionizing dose (TID) responses for both CMOS and bipolar SiGe devices are presented and compared to similar technologies. The mechanisms responsible for device degradation are outlined, and an explanation of unexpected results is proposed. Finally, Chapter 4 summarizes the work presented and understanding provided by this thesis, concluding by outlining future research needed to build upon this study and fully realize SiGe based extreme environment capable precision electronic systems.

Computation model is presented for mass spring systems of one and two dimensional phononic band gap crystals and micro-electro-mechanical systems. The computation model is veri ed with existing work, and phononic band gap microelectro- mechanical systems are analyzed. Phononic band gap in the scienti c and industrial community is discussed. The motivation and the recent popular methods are discussed. The computation models are highlighted with their pros and cons and adequate computational applications. The one dimensional mass spring model is developed and the simulator operation is validated through comparison with the published simulation data in the original paper by J.S. Jensen et al.. Additionally, the one dimensional mass spring simulator is validated for a micro-electro-mechanical system band structure. The two dimensional mass spring model is developed, as well, the simulator operation is validated through comparison with the published simulation data in the original paper by J.S. Jensen et al.. The two-dimensional simulator is utilized to analyze solid square-shaped, hollow square-shaped, solid diamond-shaped, and hollow diamond-shaped inclusion micro-electro-mechanical band gap structures. The solid inclusion-based micro-electro-mechanical band gap results are compared with hollow inclusion-based micro-electro-mechanical structures.

Optical absorption spectroscopy has been applied to study properties such as the fundamental absorption edge and defect absorption centers of group III-nitride compound semiconductor epilayers. The investigation in this thesis focused on analyzing the band gap of indium-rich In1-xGaxN epilayers, which where grown by the high-pressure chemical vapor deposition (HPCVD) technique. Our results - together with literature data for gallium-rich In1-xGaxN alloys indicate that the shift of the fundamental band gap of In1-xGaxN with composition x can be described with a bowing parameter of b = 2.2eV. Temperature dependent transmission measurements show that the band gap variation with temperature follows a S-shape behavior for small gallium concentration and shifts towards a Varshni type behavior for a higher gallium concentrations. The S-shape behavior is attributed to nanoscale compositional fluctuations/clustering in the ternary alloy system. The thicknesses of the measured In1-xGaxN epilayers have been analyzed through multilayer stack model calculations of the transmission spectra. The free electron concentration in the In1-xGaxN epilayers has been obtained from simulations of infrared reflectance spectra.

In this report the interaction between SiH2 molecules and a SiC-4H (0001) surface and SiCl2 molecules and a SiC-4H (0001) surface is investigated. This is done using a cluster model to represent the surface. First the clusters are investigated by calculating some properties to compare with experimental data to motivate the use of the cluster model. The band gap calculated by extrapolation for an infinitely large cluster is 3.75 eV which is fairly close to the experimental value of 3.2 eV. Adsorption studies are performed and the main conclusion is that the SiH2 molecule adsorbs more strongly on the surface then the SiCl2 molecule, adsorption energies are calculated to approximately 200 kJ mol-1 and 100 kJ mol-1 respectively. At the end a few migration studies are performed with the conclusion that SiCl2 more easily can diffuse on the surface compared to the SiH2 molecule. The respective activation energies for migration on the surface are 4 kJ mol-1 for SiCl2 and 87 kJ mol-1 for SiH2.