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Les recherches présentées dans ce mémoire ont été rendues possible grâce à la contribution financière du CRSNG, par à leur Programme de subventions à la découverte (SD) et leur Programme de bourses d’études supérieures du Canada au niveau de la maîtrise (BESC M); du FRQNT, par leur Programme de bourse de maîtrise (B1); et du CLS, par leur Graduate and Post-Doctoral Student Travel Support Program. / Le graphène est un nano-matériau très prometteur grâce à ses excellentes propriétés mécaniques, optiques et électriques. Toutefois, la plupart de ses applications les plus novatrices requièrent de l'altérer, mais la compréhension du graphène altéré est encore limitée. Certaines applications envisagées sont en optique infrarouge. Or, notre compréhension actuelle du graphène ne permet pas d’expliquer l’apparition des pics infrarouges qui sont observés dans les bicouches et dans les monocouches fonctionnalisées. Le comportement du graphène fonctionnalisé est particulièrement contre-intuitif, puisque l’ajout de greffons le rend plus transparent, et non pas plus opaque! Un modèle proposé par Bruno Rousseau, un étudiant post-doctorant du professeur Michel Côté à l'Université de Montréal, suggère une explication à ce phénomène: bien que les phonons du graphène ne puissent pas coupler directement avec la lumière, ils coupleraient indirectement avec celle-ci grâce à des collisions sur les électrons, qui eux, peuvent coupler avec les photons. Ce couplage indirect peut produire des interférences parfois constructives, parfois destructives, de telle sorte que ce mécanisme peut autant produire des pics d’absorbance que de transparence. Dans le cadre de ce mémoire, nous avons entrepris de vérifier expérimentalement la validité de ce modèle, et nous concluons qu’il semble prédire adéquatement le comportement de l’activité infrarouge des bicouches de graphène et des monocouches fonctionnalisées. Nous avons aussi étudié les méthodes par lesquelles nous synthétisions ces différents types de graphène afin de les optimiser. Enfin, nous avons déterminé des techniques, basées sur la spectroscopie Raman, permettant de bien caractériser l’intensité de l’altération causée par ces méthodes. / Graphene is a promising nanomaterials thanks to its excellent mechanical, optical and electrical properties. However, its most innovative applications require that it be altered, but the understanding altered graphene is still limited. Some applications are considered in infrared optics. However, our current understanding of graphene does not explain the appearance of the infrared peaks that are observed in bilayers and grafted monolayers. The behaviour of grafted graphene is especially baffling, since the addition of grafts makes it more transparent, not less! A model proposed by Bruno Rousseau, a postdoctoral student of Professor Michel Côté at Université de Montréal, suggests an explanation for this phenomenon: although the phonons of graphene cannot couple directly with light, they could couple indirectly through collisions with the electrons, which can couple with photons. This indirect coupling may produce constructive and destructive interference, depending on the conditions, so this mechanism can produce absorbance peaks as much as transparency peaks. In this master’s thesis, we have undertaken to experimentally verify the validity of this model, and we conclude that it seems to adequately predict the behaviour of the infrared activity of graphene bilayers and grafted monolayers. We also studied the methods by which we synthesized these different types of graphene to optimize them. Finally, we determined techniques based on Raman spectroscopy to characterize the intensity of the alteration induced by these methods.

Inspired by graphene, I investigate the properties of several different real and artificial Dirac materials. Firstly, I consider a two-dimensional honeycomb lattice of metallic nanoparticles, each supporting localised surface plasmons, and study the quantum properties of the collective plasmons resulting from the near field dipolar interaction between the nanoparticles. I analytically investigate the dispersion, the effective Hamiltonian and the eigenstates of the collective plasmons for an arbitrary orientation of the individual dipole moments. When the polarisation points close to normal to the plane the spectrum presents Dirac cones, similar to those present in the electronic band structure of graphene. I derive the effective Dirac Hamiltonian for the collective plasmons and show that the corresponding spinor eigenstates represent chiral Dirac-like massless bosonic excitations that present similar effects to those of electrons in graphene, such as a non-trivial Berry phase and the absence of backscattering from smooth inhomogeneities. I further discuss how one can manipulate the Dirac points in the Brillouin zone and open a gap in the collective plasmon dispersion by modifying the polarisation of the localized surface plasmons, paving the way for a fully tunable plasmonic analogue of graphene. I present a phase diagram of gapless and gapped phases in the collective plasmon dispersion depending on the dipole orientation. When the inversion symmetry of the honeycomb structure is broken, the collective plasmons become gapped chiral Dirac modes with an energy-dependent Berry phase. I show that this concept can be generalised to describe many real and artificial graphene-like systems, labeling them Dirac materials with a linear gapped spectrum. I also show that biased bilayer graphene is another Dirac material with an energy dependent Berry phase, but with a parabolic gapped spectrum. I analyse the relativistic phenomenon of Klein Tunneling in both types of system. The Klein paradox is one of the most counter-intuitive results from quantum electrodynamics but it has been seen experimentally to occur in both monolayer and bilayer graphene, due to the chiral nature of the Dirac quasiparticles in these materials. The non-trivial Berry phase of pi in monolayer graphene leads to remarkable effects in transmission through potential barriers, whereas there is always zero transmission at normal incidence in unbiased bilayer graphene in the npn regime. These, and many other 2D materials have attracted attention due to their possible usefulness for the next generation of nano-electronic devices, but some of their Klein tunneling results may be a hindrance to this application. I will highlight how breaking the inversion symmetry of the system allows for results that are not possible in these system's inversion symmetrical counterparts.

Carrier, spin, charge current, and spin current injection by one- and two-color optical schemes are investigated within 30-band k·p theory. Parameters of the band model are optimized to give full-Brillouin zone band structures for GaAs and Ge that give accurate Γ-point effective masses and gyromagnetic factors and give access to the L valley, and to the E₁ and E₁+Δ₁ critical points in the linear optical absorption. Calculations of one- and two-photon carrier and spin injection and two-color current injection are performed for excitation energies in the range of 0—4 eV in GaAs and 0—3.5 eV in Ge. Significant spin and spin current injection occurs with 30% spin polarization in GaAs and Ge at photon energy matching the E₁ critical point. Further, the anisotropy and disparity of the current injection between parallel and perpendicular linearly-polarized beam configurations are calculated. For light propagating along a <111> crystal axis, anisotropic contributions in coherent current control and two-photon spin injection give rise to normal current components and in-plane spin components. In Ge, contributions from the holes to spin, electrical current, and spin current injection are investigated. Optical orientation results in 83% spin-polarized holes at the band edge. The effects of carrier dynamics in Ge are treated within a rate-equation model. The detection of spin dynamics in a pump-probe setup is considered, and the Fermi-factor approach is justified for electrons but not for holes. Carrier and current injection are further investigated in single-layer and bilayer graphene within the tight-binding model. In single-layer graphene, the linear-circular dichroism in two-photon absorption yields an absorption coefficient that is twice as large for circularly polarized light compared to linearly polarized light. Coherent current injection is largest for co-circularly polarized beams and zero for cross-circularly polarized beams. For linearly polarized beams, the magnitude of the injected current is independent of beam polarizations. In contrast, the injected current in bilayer graphene shows disparity between parallel and perpendicular configurations of the beams. The resulting angular dependence of the current is a macroscopic, measurable consequence of interlayer coupling in the bilayer.

Carrier, spin, charge current, and spin current injection by one- and two-color optical schemes are investigated within 30-band k·p theory. Parameters of the band model are optimized to give full-Brillouin zone band structures for GaAs and Ge that give accurate Γ-point effective masses and gyromagnetic factors and give access to the L valley, and to the E₁ and E₁+Δ₁ critical points in the linear optical absorption. Calculations of one- and two-photon carrier and spin injection and two-color current injection are performed for excitation energies in the range of 0—4 eV in GaAs and 0—3.5 eV in Ge. Significant spin and spin current injection occurs with 30% spin polarization in GaAs and Ge at photon energy matching the E₁ critical point. Further, the anisotropy and disparity of the current injection between parallel and perpendicular linearly-polarized beam configurations are calculated. For light propagating along a <111> crystal axis, anisotropic contributions in coherent current control and two-photon spin injection give rise to normal current components and in-plane spin components. In Ge, contributions from the holes to spin, electrical current, and spin current injection are investigated. Optical orientation results in 83% spin-polarized holes at the band edge. The effects of carrier dynamics in Ge are treated within a rate-equation model. The detection of spin dynamics in a pump-probe setup is considered, and the Fermi-factor approach is justified for electrons but not for holes. Carrier and current injection are further investigated in single-layer and bilayer graphene within the tight-binding model. In single-layer graphene, the linear-circular dichroism in two-photon absorption yields an absorption coefficient that is twice as large for circularly polarized light compared to linearly polarized light. Coherent current injection is largest for co-circularly polarized beams and zero for cross-circularly polarized beams. For linearly polarized beams, the magnitude of the injected current is independent of beam polarizations. In contrast, the injected current in bilayer graphene shows disparity between parallel and perpendicular configurations of the beams. The resulting angular dependence of the current is a macroscopic, measurable consequence of interlayer coupling in the bilayer.

Submitted by Geandra Rodrigues (geandrar@gmail.com) on 2018-01-11T18:27:28Z No. of bitstreams: 1 manoelcarlosdossantosjunior.pdf: 4607995 bytes, checksum: 47fe628f81ff50e0935ea700b075a416 (MD5) / Rejected by Adriana Oliveira (adriana.oliveira@ufjf.edu.br), reason: Favor corrigir: Título: Síntese e estudo raman de grafeno bicamada rodado sob influência e campo eléctrico Título: Síntese e estudo raman de grafeno bi-camada rodado sob influencia e campo eléctrico Verificar o acento em Júnior e corrigir "dos" Autor(es): Santos Junior, Manoel Carlos Dos on 2018-01-23T13:56:04Z (GMT) / Submitted by Geandra Rodrigues (geandrar@gmail.com) on 2018-01-23T14:05:52Z No. of bitstreams: 1 manoelcarlosdossantosjunior.pdf: 4607995 bytes, checksum: 47fe628f81ff50e0935ea700b075a416 (MD5) / Approved for entry into archive by Adriana Oliveira (adriana.oliveira@ufjf.edu.br) on 2018-01-23T14:22:48Z (GMT) No. of bitstreams: 1 manoelcarlosdossantosjunior.pdf: 4607995 bytes, checksum: 47fe628f81ff50e0935ea700b075a416 (MD5) / Made available in DSpace on 2018-01-23T14:22:48Z (GMT). No. of bitstreams: 1 manoelcarlosdossantosjunior.pdf: 4607995 bytes, checksum: 47fe628f81ff50e0935ea700b075a416 (MD5) Previous issue date: 2016-02-26 / CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / No presente trabalho, usamos os dois principais modos de operação CVD, LPCVD (low Pressure Chemical Vapor Deposition – Deposição Química na Vapor em Baixa Pressão) e APCVD (Ambient Pressure Chemical Vapor Deposition – Deposição Química na Vapor em Pressão Ambiente), para a produção de filmes de grafeno bicamada rodado (GBR). O modo LPCVD se mostrou mais eficaz para produção de grafeno monocada de alta qualidade e cobrindo grandes áreas. Pelo modo APCVD foi possível otimizar uma rota reprodutível para sintetizar filmes de GBR com todos os ângulos possíveis e com dimensões suficientes para realização de medidas Raman com precisão espacial (≈100 ). Usamos, microscopia óptica e espectroscopia Raman para caracterizar os filmes de GBR. Posteriormente, os filmes sintetizados foram transferidos para um substrato litografado para confecção de um dispositivo de efeito de campo (FET). Fizemos um estudo sistemático das características Raman do GBR (frequência, largura máxima a meia altura e intensidades relativas das bandas G e 2D) como função da altura do nível de Fermi. Observamos uma diminuição das Anomalias de Kohn e um aumento do tempo de vida dos fônons responsáveis pela banda G tanto do grafeno quanto do GBR quando a tensão de porta é sintonizada. Observamos também que, para ângulos grandes, 20°≤≤30°, as principais características Raman do GBR se mantém constantes quando sintonizamos uma tensão de porta, em outras palavras, as curvas da frequência e da largura máxima a meia altura das bandas G e 2D assumem o mesmo comportamento. Contudo, para ângulos pequenos, menores que <7,5°, observamos alterações nas características Raman do grafeno quando uma tensão de porta é aplicada, principalmente na banda 2D. Ainda são necessários mais estudos para a compreensão correta desses fenômenos. Porém, atribuímos essas diferenças de comportamento das características Raman do GBR a uma diminuição da velocidade de Fermi dos elétrons nesse material para ângulos pequenos. Para ângulos grandes, não observamos nenhuma diferença nas características Raman do GBR. Isso pode ser explicado pelo fato de que, para ângulos grandes, as camadas do GBR estão praticamente desacopladas, fazendo com que as propriedades do GBR sejam semelhantes às de uma monocamada de grafeno. / In this work, we have employed, both, Low Pressure Chemical Vapor Deposition, (LPCVD) as well as Ambient Pressure Chemical Vapor Deposition (APCVD) to produce large areas of twisted bi-layer graphene. LPCVD allowed us to produce highly crystalline monolayer graphene. However, by using APCVD we were able to obtain twisted bi-layer graphene as large as ≈100 . All the materials synthesized were carefully analyzed by optical microscopy and Raman spectroscopy. Once we were able to produce ideals bi-layer twisted graphene films; we transferred these materials to a field effect transistor (FET) device. Then we studied the graphene Raman features as a function of the gate voltage. As expected, we observed that the Kohn anomaly was removed by doping graphene by either holes or electrons. Also, the G band phonon lifetime tends to increase as a function of the gate voltage for both monolayer and twisted bi-layer graphene. It seems that large angle twisted bi-layer graphene 20°≤≤30° has a Raman behavior, when back-gated, very similar to monolayer graphene. Which seems to be consistent with the fact that those sample behave as two uncoupled monolayer graphene. Even though, we could prove that our FET device was working properly, we could not obtain significant modification of the Raman band features for twisted bi-layer with small angles (<7,5°).

Two dimensional (2D) systems with low carrier density is an outstanding platform for studying a wide spectrum of physics. These include both classical and quantum effects, arising from disorder, Coulomb interactions and even non-trivial topological properties of band-structure. In this thesis, we have explored the physics at low carrier number density in GaAs/AlGaAs heterostructure and bilayer graphene, by investigating in a larger phase space using a variety of electrical measurement tools. A two-dimensional electron system (2DES) formed in a GaAs/AlGaAs heterostructure offers an avenue to build a variety of mesoscopic devices, primarily because its surface gates can very effectively control its carrier density profile. In the first half of the thesis, we study the relevance of disorder in two kinds of devices made in a 2DES. A very strong negative gate voltage not only reduces the carrier density of the 2DES, but also drives it to a disordered state. In this state, we explore a new direction in parameter space by increasing in-plane electric field and investigating its magneto-resistance (MR). At sufficiently strong gate voltage and source-drain bias, we discover a remarkably linear MR. Its enormous magnitude and weak temperature dependence indicate that this is a classical effect of disorder. In another study, we examine a specially designed dual-gated device that can induce low number density in a periodic pattern. By applying appropriate gate voltages, we demonstrate the formation of an electrostatically tunable quantum dot lattice and study the impact of disorder on it. This work is important in paving way for solid state based platform for experimental simulations of artificial solids. The most striking property of bilayer graphene is the ability to open its band gap by a perpendicular electric field, giving the prospects of enabling a large set of de-vice applications. However, despite a band gap, a number of transport mechanisms are still active at very low densities that range from hopping transport through bulk to topologically protected 1D transport at the edges or along 1D crystal dislocations. In the second half of the thesis, we have used higher order statistical moment of resistance/conductance fluctuations, namely the variance of the fluctuations, to complement averaged resistance/conductance, and study and infer the dominant transport mechanism at low densities in a gapped bilayer graphene. Our results show possible evidence of percolative transport and topologically protected edge transport at different ranges of low number densities. We also explore the same phase space by studying its mesoscopic conductance fluctuations at very low temperatures. This is the first of its kind systematic experiment in a dual-gated bilayer graphene device. Its conductance fluctuations have several anomalous features suggesting non-universal behaviour which is at odds with conventional disordered systems.

Cette thèse présente des mesures de transport électronique dans des systèmes bi-dimensionels et uni-dimensionels à base de graphène sous champ magnétique pulsé (60T). L'objectif de ces travaux consiste à sonder la dynamique des porteurs de charge en modifiant la densité d'états du système par l'application d'un champ magnétique. Une première partie est consacrée à l'étude de l'influence des îlots électrons-trous sur les propriétés de transport du graphène au voisinage du point de neutralité de charge. Nous avons constaté l'apparition de fluctuations de la magnéto-résistance liée à la transition progressive des îlots de taille finie dans le régime quantique lorsque le champ magnétique augmente. Nous avons aussi montré que la variation de l'énergie de Fermi, liée à l'augmentation de la dégénérescence orbitale des niveaux de Landau, est directement responsable d'une modification du ratio entre électrons et trous. Dans une deuxième partie consacrée à l'étude des nanorubans de graphène, nous avons exploré deux gammes de largeur différentes. Dans les rubans larges (W>60nm), la quantification de la résistance a été observée révélant ainsi une signature évidente de la quantification du spectre énergétique en niveaux de Landau. Le confinement magnétique des porteurs de charge sur les bords des nanorubans a permis de mettre en évidence, pour la première fois, la levée de dégénérescence de vallée liée à la configuration armchair du ruban. Pour des rubans plus étroits (W<30nm), en présence de défauts de bord et d'impuretés chargées, la formation progressive des états de bords chiraux donne lieu à une magnéto-conductance positive quelque soit la densité de porteurs. Enfin, la dernière partie traite du magnéto-transport dans le graphene multi-feuillet. En particulier, nous avons observé l'effet Hall quantique dans les systèmes tri-couche de graphène. Une étude comparative des résultats expérimentaux avec des simulations numériques a permis de déterminer l'empilement rhombohedral des trois couches de graphene constituant l'échantillon / This thesis presents transport measurements on two-dimensional and one-dimensional graphene-based systems under pulsed magnetic field (60T). The objective of this work is to probe the dynamics of charge carriers by changing the density of states of the system by applying a strong magnetic field. The first part is devoted to the study of the influence of electron-hole pockets on the transport properties of graphene near the charge neutrality point. We found the appearance of fluctuations in the magneto-resistance due to the progressive transition of the electron/hole puddles of finite size in the quantum regime as the magnetic field increases. We have also shown that the variation of the Fermi energy, due to the increase of orbital Landau level degeneracy, is directly responsible of a change in the electron and hole ratio. The second part is devoted to the study of graphene nano-ribbons, we explored two different ranges of width. In the broad nano-ribbons of width W larger than 60 nm, the quantification of the resistance is observed, revealing a clear signature of the quantization of the energy spectrum into Landau levels. We show for the first time the effect of valley degeneracy lifting induced by the magnetic confinement of charge carriers at the edges of the armchair nano-ribbons. For narrower nano-ribbons (W <30 nm) in presence of edge defects and charged impurities, the progressive formation of chiral edge states leads to a positive magneto-conductance whatever the carrier density. Finally, the last part of this thesis deals with magneto-transport fingerprints in multi-layer graphene as we observed the quantum Hall effect in tri-layer graphene. A comparative study of the experimental results with numerical simulations was used to determine the rhombohedral stacking of three layers of graphene in the sample

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