Gegenstand der Dissertation sind Untersuchungen zur Photolumineszenz von Silizium-Nanokristallen. Den Schwerpunkt bilden dabei die Messungen an isolierten Partikeln mittels konfokaler Mikroskopie und optischer Spektroskopie. Von einzelnen Silizium-Partikeln konnten relativ schmale, strukturierte Photolumineszenzbanden detektiert werden, die die Aussagen des Quantum-Confinement-Modells bestätigen. Ein weiteres Merkmal der Photolumineszenz von einzelnen Halbleiter-Nanopartikeln ist das so genannte Blinken. Die Erstellung von Blinkstatistiken unter verschiedenen Anregungsbedingungen ermöglichte es, die zum Blinken führenden photophysikalischen Prozesse genauer zu charakterisieren. Es wird unter anderem gezeigt, dass das reversible Bleichen der Lumineszenz von Silizium-Nanokristall-Ensemblen und porösem Silizium auf ein instationäres Blinkverhalten zurückzuführen ist. Abschließend werden Bezüge zu den astrophysikalischen Beobachtungen von der Extended Red Emission hergestellt und verschiedene Tunnel- und Random-Walk-Modelle zur Beschreibung der photophysikalischen Prozesse diskutiert.

This thesis addresses the observed fluorescence intermittency of single semiconductor nanocrystals, so called Quantum Dots (QDs), which is also referred to as blinking. Despite continuous excitation their fluorescence is randomly interrupted by dark periods that can last over several minutes. Especially the extraction of power law dwell time statistics in bright and dark states indicates very complex underlying processes that are not fully understood to date. Here two approaches are followed to reveal the nature of the blinking mechanism. One addresses the common threshold method for extraction of power law dwell times. Its performance is tested with simulations to a broad range of experimentally determined parameters. Strong deviations are found between input and extracted statistics dependent on input parameters themselves. A comparison with experimental data does not support the assignment of power law statistics for the bright state and indicates the existence of distinct blinking mechanisms. The second approach directly aims at the nature of the dark state, which is mostly attributed to charges in the QD or trap states in its vicinity. A method is developed to detect charging processes on single QDs with their fluorescence. Electrochemistry is combined with confocal microscopy also allowing evaluations of excited state lifetimes and emission spectra. Reduction and oxidation of the QD bands are successfully observed as a quenching of QD fluorescence. Single QD observations identify two independent blinking mechanisms, that are assigned to positive and negative charging. Positive charging is not only observed after hole injection but also the extraction of excited electrons. Three additional quenching mechanisms are identified, two of which are assigned to trap relaxation. Differences between two substrate electrodes demonstrate the importance of the substrate material.

This thesis addresses the observed fluorescence intermittency of single semiconductor nanocrystals, so called Quantum Dots (QDs), which is also referred to as blinking. Despite continuous excitation their fluorescence is randomly interrupted by dark periods that can last over several minutes. Especially the extraction of power law dwell time statistics in bright and dark states indicates very complex underlying processes that are not fully understood to date. Here two approaches are followed to reveal the nature of the blinking mechanism. One addresses the common threshold method for extraction of power law dwell times. Its performance is tested with simulations to a broad range of experimentally determined parameters. Strong deviations are found between input and extracted statistics dependent on input parameters themselves. A comparison with experimental data does not support the assignment of power law statistics for the bright state and indicates the existence of distinct blinking mechanisms. The second approach directly aims at the nature of the dark state, which is mostly attributed to charges in the QD or trap states in its vicinity. A method is developed to detect charging processes on single QDs with their fluorescence. Electrochemistry is combined with confocal microscopy also allowing evaluations of excited state lifetimes and emission spectra. Reduction and oxidation of the QD bands are successfully observed as a quenching of QD fluorescence. Single QD observations identify two independent blinking mechanisms, that are assigned to positive and negative charging. Positive charging is not only observed after hole injection but also the extraction of excited electrons. Three additional quenching mechanisms are identified, two of which are assigned to trap relaxation. Differences between two substrate electrodes demonstrate the importance of the substrate material.

Gegenstand der Dissertation sind Untersuchungen zur Photolumineszenz von Silizium-Nanokristallen. Den Schwerpunkt bilden dabei die Messungen an isolierten Partikeln mittels konfokaler Mikroskopie und optischer Spektroskopie. Von einzelnen Silizium-Partikeln konnten relativ schmale, strukturierte Photolumineszenzbanden detektiert werden, die die Aussagen des Quantum-Confinement-Modells bestätigen. Ein weiteres Merkmal der Photolumineszenz von einzelnen Halbleiter-Nanopartikeln ist das so genannte Blinken. Die Erstellung von Blinkstatistiken unter verschiedenen Anregungsbedingungen ermöglichte es, die zum Blinken führenden photophysikalischen Prozesse genauer zu charakterisieren. Es wird unter anderem gezeigt, dass das reversible Bleichen der Lumineszenz von Silizium-Nanokristall-Ensemblen und porösem Silizium auf ein instationäres Blinkverhalten zurückzuführen ist. Abschließend werden Bezüge zu den astrophysikalischen Beobachtungen von der Extended Red Emission hergestellt und verschiedene Tunnel- und Random-Walk-Modelle zur Beschreibung der photophysikalischen Prozesse diskutiert.