Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal.

In case of a release of radioactive nuclides into the environment it is necessary to  have reliable methods to estimate the potential effect on people and the ecosystem. In this context the total activity deposited, the elemental composition and the depth distribution are of importance. An efficient in situ method to estimate the average contamination over larger areas using high purity germanium (HPGe) detectors has been developed. The method combines simulation of photon transport with measured detector properties. The total activity of 137Cs determined from gamma-ray spectra recorded in situ are compared to results from soil sampling. Another in situ method has been developed to determine the depth distribution of a radionuclide contamination, using an array of small detectors inserted into the ground, as an alternative to the standard procedure of soil sampling. The possibility to use cadmium telluride (CdTe) detectors as well as lanthanum bromide (LaBr3) detectors has been investigated. As a demonstration of the developed method the small-scale variation of the activity distributions in an area covering 350 m2 have been measured and is compared to results obtained by other methods. / At the time of the doctoral defense, the following paper was unpublished and had a status as follows: Paper 4: Submitted.

Dual energy imaging has made it possible to enhance contrast in medical images using images containing different energy information, by combining low and high energy images. Dual energy data can either be acquired using double exposures or splitting the energy spectrum into two images using one exposure. This thesis presents investigations of dual energy imaging using a detector solution developed by XCounter which provides dual energy images in a single exposure with a threshold separating low and high energy images. Phantom experiments with phantoms of aluminum and plexiglas were performed using weighted logarithmic subtraction and basis material decomposition to produce dual energy images. Methods were validated and images were evaluated in terms of signal difference in noise ratio to find the threshold and tube voltage combination for optimum energy spectrum separation. The methods were also tested on biological materials using bone, soft tissue and iodine solution as contrast enhancer, to investigate K-edge imaging.  Optimal separation of plexiglas and aluminum were found at 70 kVp and the threshold parameter set within a range of 8 to 9, which corresponds to approximately 30 to 34 keV. For K-edge imaging, the optimum separation were found close to K-edge energy of iodine. The results found in the phantom study correlated with results from the biological material study.

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained from higher built-in electric field. Light trapping schemes can increase the effective optical absorption length and thus enhance the electric current for thinner solar cells. Here a new light trapping scheme based on light trapping transparent conducting oxide layer (LT-TCO) is proposed to enhance the performance of thin film solar cells. Three different configurations of integrating the LT-TCO layer in solar cells are proposed and evaluated. This research aims to develop the LT-TCO layer with surface texture and good conductivity by pulsed laser deposition (PLD) technique at low temperature. The LT-TCO layer is fabricated by PLD deposition of Al-doped ZnO to achieve multilayer films by tuning of oxygen pressure. The light trapping effect is examined by optical transmittance measurement and the surface texture is characterized by transmission electron microscopy (TEM) technique. The conductivity of LT-TCO layer is measured by resistivity measurement. Thin film CdTe/CdS solar cells are fabricated by PLD technique to develop baseline solar cells for integration of LT-TCO layer. The as-deposited thin film solar cells show relatively low performance and are further processed with various post-deposition treatments to seek efficiency enhancement. The effects of different processes on cell performance are examined by electrical, optical, and microstructure studies. Air annealing of CdS layer and CdCl2 treatment of CdTe layer combined are found to yield the best cell performance. The fabrication issues that limit the cell performance are discussed and future optimizations in fabrication processes are suggested.

Photovoltaic devices are receiving growing interest in both industry and research institutions due to the great demand for clean and renewable energy. Among all types of solar cells, cadmium sulfide (CdS) – cadmium telluride (CdTe) and cadmium sulfide (CdS) - copper indium diselenide (CuInSe2 or CIS) heterojunctions based thin film solar cells are of great interest due to their high efficiency and low cost. Further improvement in power conversion efficiency over the traditional device structure can be achieved by tuning the optical and electric properties of the light absorption layer as well as the window layer, utilizing nano template-assisted patterning and fabrication. In this dissertation, simulation and calculation of photocurrent generation in nanowires (NW) based heterojunction structure indicated that an estimated 25% improvement in power conversion efficiency can be expected in nano CdS – CdTe solar cells. Two novel device configurations for CdTe solar cells were developed where the traditional thin film CdS window layer was replaced by nanowires of CdS, embedded in aluminum oxide matrix or free standing. Nanostructured devices of the two designs were fabricated and a power conversion efficiency value of 6.5% was achieved. Porous anodic aluminum oxide (AAO) was used as the template for device fabrication. A technology for removing the residual aluminum oxide barrier layer between indium tin oxide (ITO) substrate and AAO pores was developed. Causes and remedies for the non-uniform barrier layer were investigated, and barrier-free AAO on ITO substrate were obtained. Also, vertically aligned nanowire arrays of CIS of controllable diameter and length were produced by simultaneously electrodepositing Cu, In and Se from an acid bath into the AAO pores formed on top of an aluminum sheet. Ohmic contact to CIS was formed by depositing a 100 nm thick gold layer on top and thus a Schottky diode device of the Au/CIS nanowires/Al configuration was obtained. Material properties of all these nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), absorption measurement. Current-voltage (I-V), capacitance-voltage (C-V) and low-temperature measurements were performed for all types of devices and the results were analyzed to advance the understanding of electron transport in these nano-structured devices.

In this thesis, photo luminescent diodes with the device structure of ITO/PEI/(CdTe/PDDA)*n/Al were fabricated using the method of layer-by-layer self assembly. The film thicknesses were varied from 150 nm to 380 nm. The films were characterized through X-ray diffraction (XRD), optical absorption and photoluminescence (PL) measurements. The XRD results on the film indicated a cubic crystalline structure (111) for the nano-CdTe particles. The band gap of the nano-particles were evaluated to be 2.1 eV in solution and 2 eV in films, which was further confirmed by the PL measurements as the solution exhibited a yellow luminescence while the film exhibited orange luminescence. The J vs. V curves revealed that the diodes exhibited rectifying behavior in both the forward and reverse biasing. Two models of current transport, one based on a Schottky mechanism and the other based on a tunneling mechanism were developed and were compared with the experimental values. The tunneling model developed could simulate the experimental currents up to four orders of magnitude. The tunneling mechanism of charge transport was further proved by the capacitance vs. voltage curves, which were identical to that of ITO/MEH-PPV/Al devices, where tunneling mechanism was the dominant method of charge transport.

Detta arbete syftade till att svara dels på vilka solcellstyper som finns på den svenska marknaden och vad som skiljer dem åt, dels hur förutsättningarna ekonomiskt ser ut för solceller i Sverige. Arbetets metod bestod av en litteraturstudie och en marknadssammanställning. Resultatet visade på att solceller finns etablerade på den svenska marknaden och att det är monokristallina och polykristallina kiselsolceller som dominerar utbudet. Kiselceller har fördelen att grundämnet finns i stor koncentration på jorden men de kräver en energikrävande process för tillverkningen. Vidare visade resultatet att en mindre del av marknaden utgörs av tunnfilmssolceller av CIGS och CdTe. Tunnfilmerna har en tjocklek ned till en mikrometer och har en tillverkningsprocess som är enklare och mindre energikrävande. Förutsättningarna för solceller i Sverige är betydligt sämre än för sydligare länder och även inom Sverige varierar förutsättningarna stort. Endast med hjälp av flera subventioner kan solceller i mindre skala göras ekonomiskt hållbara idag. / The purpose of this paper was to examine which types of solar cells are available on the Swedish market, their technical properties and the economic conditions for photovoltaics in Sweden. The method consisted of a literature study and a market survey. The result showed that photovoltaics are well established on the Swedish market and that it is monocrystalline and polycrystalline silicon solar cells which dominate. Silicon cells have the advantage of an unlimited supply of the chemical element. However the manufacturing process is an energy consuming. Furthermore, the results showed that a small part of the market is made up of thin film solar cells of CIGS and CdTe. Thin films have a thickness down to a micrometer and the manufacturing process is easier and less energy consuming. The condition for photovoltaics in Sweden is less favorable than in countries situated further south. The prerequisite also varies largely in Sweden. Only with the help of subsidies may photovoltaic on a smaller scale be made economically viable today.

Light reflection from the glass surface of a photovoltaic (PV) module is a significant source of energy loss for all types of PV devices. The reflection at the glass and air interface accounts for ~4% of the total energy. Single layer anti-reflection coatings with sufficiently low refractive index have been used, such as those using magnesium fluoride or porous silica, but these are only effective over a narrow range of wavelengths. Multilayer-antireflection coatings reduce the weighted average reflection over the wavelength range used by solar technologies more effectively by utilising interference effects. Multilayer stacks consisting of silica and zirconia layers deposited using reactive magnetron sputtering and single layer porous silica coatings were compared in terms of effectiveness and durability. Details of the stack design, sputter deposition process parameters, and the optical and micro-structural properties of the layers of the multilayer coating are provided and similar properties where applicable for the single layer coatings. Anti-reflection coatings on glass exposed to the outdoors must not degrade over the lifetime of the module. A comprehensive set of accelerated environmental durability tests has been carried out in accordance with IEC 61646 PV qualification tests. The durability tests confirmed no damage to the coatings or performance drop as a result of thermal cycling or damp heat. All attempts to perform pull tests on either coating resulted in either adhesive or substrate failure, with no damage to the coating itself. Scratch resistance, abrasion resistance, and adhesion tests have also been conducted. The optical performance of the coatings was monitored during these tests and the coatings were visually inspected for any sign of mechanical failure. These tests provide confidence that broadband anti-reflection coatings are highly durable and will maintain their performance over the lifetime of the solar module. Additionally heat treatment experiments demonstrated both coatings can withstand up to 600°C temperatures and can thereby withstand CdTe manufacturing processes allowing for pre-coated glass. Additionally experiments demonstrated that multi-layer coatings are resistant to acid attack. Thin film photovoltaic devices are multilayer opto-electrical structures in which light interference occurs. Light reflection at the interfaces and absorption within the window layers reduces transmission and, ultimately, the conversion efficiency of photovoltaic devices. Optical reflection losses can be reduced by adjusting the layer thicknesses to achieve destructive interference within the structure of the cell. The light transmission to the CdTe absorber of a CdS/CdTe cell on a fluorine doped tin oxide transparent conductor has been modelled using the transfer matrix method. The interference effect in the CdS layer and high resistance transparent buffer layers (SnO2 and ZnO) has been investigated. The modelling shows that due to relatively high absorption within the SnO2 layer, there are modest benefits to engineering anti-reflection interference in the stack. However, a ZnO buffer layer has limited absorption and interference can be exploited to provide useful anti-reflection effects. Additionally the light transmission to the perovskite absorber of a thin film solar cell using fluorine doped tin oxide (FTO) transparent conductor has been modelled. Alternative transparent conductor materials have also been investigated including aluminium doped zinc oxide (AZO) and indium tin oxide (ITO) and shown to be beneficial to transmission.

abstract: CdTe/MgxCd1-xTe double heterostructures (DHs) have been grown on lattice matched InSb (001) substrates using Molecular Beam Epitaxy. The MgxCd1-xTe layers, which have a wider bandgap and type-I band edge alignment with CdTe, provide sufficient carrier confinement to CdTe, so that the optical properties of CdTe can be studied. The DH samples show very strong Photoluminescence (PL) intensity, long carrier lifetimes (up to 3.6 μs) and low effective interface recombination velocity at the CdTe/MgxCd1 xTe heterointerface (~1 cm/s), indicating the high material quality. Indium has been attempted as an n-type dopant in CdTe and it is found that the carriers are 100% ionized in the doping range of 1×1016 cm-3 to 1×1018 cm-3. With decent doping levels, long minority carrier lifetime, and almost perfect surface passivation by the MgxCd1-xTe layer, the CdTe/MgxCd1-xTe DHs are applied to high efficiency CdTe solar cells. Monocrystalline CdTe solar cells with efficiency of 17.0% and a record breaking open circuit voltage of 1.096 V have been demonstrated in our group. Mg0.13Cd0.87Te (1.7 eV), also with high material quality, has been proposed as a current matching cell to Si (1.1 eV) solar cells, which could potentially enable a tandem solar cell with high efficiency and thus lower the electricity cost. The properties of Mg0.13Cd0.87Te/Mg0.5Cd0.5Te DHs and solar cells have been investigated. Carrier lifetime as long as 0.56 μs is observed and a solar cell with 11.2% efficiency and open circuit voltage of 1.176 V is demonstrated. The CdTe/MgxCd1-xTe DHs could also be potentially applied to luminescence refrigeration, which could be used in vibration-free space applications. Both external luminescence quantum efficiency and excitation-dependent PL measurement show that the best quality samples are almost 100% dominated by radiative recombination, and calculation shows that the internal quantum efficiency can be as high as 99.7% at the optimal injection level (1017 cm-3). External luminescence quantum efficiency of over 98% can be realized for luminescence refrigeration with the proper design of optical structures. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2016

abstract: Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. The most commonly alleged causes of instability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. As all defects, intrinsic or extrinsic, interact with the electrical potential and free carriers so that charged defects may drift in the electric field and changing ionization state with excess free carriers. Such complexity of interactions in CdTe makes understanding of temporal changes in device performance even more challenging. The goal of the work in this dissertation is, thus, to eliminate the ambiguity between the observed performance changes under stress and their physical root cause by enabling a depth of modeling that takes account of diffusion and drift at the atomistic level coupled to the electronic subsystem responsible for a PV device’s function. The 1D Unified Solver, developed as part of this effort, enables us to analyze PV devices at a greater depth. In this dissertation, the implementation of a drift-diffusion model defect migration simulator, development of an implicit reaction scheme for total mass conservation, and a couple of other numerical schemes to improve the overall flexibility and robustness of this coupled Unified Solver is discussed. Preliminary results on Cu (with or without Cl-treatment) annealing simulations in both single-crystal CdTe wafer and poly-crystalline CdTe devices show promising agreement to experimental findings, providing a new perspective in the research of improving doping concentration hence the open-circuit voltage of CdTe technology. Furthermore, on the reliability side, in agreement of previous experimental reports, simulation results suggest possibility of Cu depletion in short-circuited cells stressed at elevated temperature. The developed solver also successfully demonstrated that mobile donor migration can be used to explain solar cell performance changes under different stress conditions. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2017