Spelling suggestions: "subject:"carbon contamination"" "subject:"charbon contamination""
1 |
Low Impurity Content GaN Prepared via OMVPE for Use in Power Electronic Devices: Connection Between Growth Rate, Ammonia Flow, and Impurity IncorporationCiarkowski, Timothy A. 10 October 2019 (has links)
GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as opposed to material whose properties are dominated by structural and chemical defects. In addition, very thick films can be grown without cracking due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find growth conditions which reduces contamination without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of the intentional dopants. / Doctor of Philosophy / GaN is a compound semiconductor which has the potential to revolutionize the high power electronics industry, enabling new applications and energy savings due to its inherent material properties. However, material quality and purity requires improvement. This improvement can be accomplished by reducing contamination and growing under extreme conditions. Newly available bulk substrates with low defects allow for better study of material properties. In addition, very thick films can be grown without cracking on these substrates due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find optimal growth conditions for high purity GaN without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of impurities.
|
2 |
Élaboration de céramiques polycristallines transparentes Er ³+ : YAG par Spark Plasma Sintering pour applications laser de puissance / Development of transparent polycrystalline Er ³+ : YAG ceramics by Spark Plasma Sintering for high power laser applicationsKatz, Aurélien 31 March 2016 (has links)
Cette étude s’intéresse à l’amélioration des performances du laser solide Er3+:YAG, dont la longueur d’onde de 1,64 µm est dite « eye-safe ». L’une des solutions est le remplacement des monocristaux actuellement utilisés comme milieu amplificateur par des céramiques polycristallines Er:YAG transparentes, dont les propriétés thermomécaniques remarquables permettent une meilleure cohérence du faisceau de sortie et de ce fait, une augmentation des performances du laser. Cependant, la réunion des différents critères requis pour obtenir la transparence reste un réel challenge dans l’élaboration de ces céramiques. L’utilisation de poudres commerciales issues de deux voies de synthèse différentes a permis de souligner le rôle primordial des caractéristiques physiques de la poudre sur le comportement à la compaction et au frittage, effectué par Spark Plasma Sintering, tandis que la composition phasique et la pureté chimique conditionnent la qualité optique finale. Il ressort également que la coloration de la céramique observée lors du frittage résulte, non pas d’une contamination au carbone, mais de la formation de lacunes d’oxygène. Enfin, l’analyse et la compréhension du mode d’action du LiF utilisé comme aide au frittage ont permis d’établir des mécanismes réactionnels permettant d’optimiser le cycle de frittage. Cette démarche a conduit à l’obtention de céramiques polycristallines transparentes (Ø = 30 mm, e = 3 mm) à qualité optique élevée avec des valeurs de transmission de 80 % à 400 nm et 84 % à 1100 nm. Sur la base de ces résultats et de la simulation numérique, un changement d’échelle des céramiques (Ø = 50 mm, e = 5 mm) a été effectué dans le but de les évaluer en cavité laser. / This work focus on the improvement of the solid state Er3+:YAG laser performances presenting an "eye-safe" wavelength at 1.64 µm. One way is the replacement of single crystals currently used as gain media by polycrystalline ceramics as they present improved thermo-mechanical properties allowing a longer use of the laser. However, the meeting of different criteria requested to get transparency remains a challenge in the development of these ceramics. The use of commercial powders produced by two different synthesis ways allowed to highlight the essential role of the physico-chemical characteristics of the powder on compaction and sintering behaviors, performed by Spark Plasma Sintering, Phase composition and chemical purity have an influence of the final optical quality. It was also figured out that the gray coloration of the ceramic observed after sintering is caused by the formation of oxygen vacancies, rather than a carbon contamination. Finally, the mode of action of LiF, used as sintering aid to increase optical transmittance, was studied in order to establish reaction mechanisms allowing an optimization of the SPS cycle. This approach helps to reach Er3+:YAG transparent polycrystalline ceramics (Ø = 30 mm, thk = 3 mm) with an optical transmittance of 80 at 400 nm and 84 % at 1100 nm. On the basis of these results and with the help of numerical simulation, an up-scaling of ceramics (Ø = 50 mm, thk = 5 mm) was undertaken in order to evaluate their laser performances through laser cavity tests.
|
Page generated in 0.1127 seconds