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Chemischer Transport von Chalkogeniden unter Berücksichtigung spezieller Verfahren zur Kontrolle und Optimierung des Transportprozesses und des Kristallwachstums /Knitter, Stefanie. January 2000 (has links) (PDF)
Hannover, Universiẗat, Diss., 2000.
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Darstellung und Charakterisierung neuer Verbindungen auf Lanthanoid-Chalkogenid-BasisKlawitter, Yvonne L. I. Unknown Date (has links) (PDF)
Universiẗat, Diss., 2004--Kiel.
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Alkalimetallmanganchalkogenide Synthese, Struktur und Magnetismus /Böhmer, Martina. Unknown Date (has links) (PDF)
Techn. Hochsch., Diss., 2001--Aachen.
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Neue Shandite und Parkerite : Darstellung und röntgenographische CharakterisierungAnusca, Irina January 2008 (has links)
Regensburg, Univ., Diss., 2008.
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Quaternary silver bismuth chalcogenide halides Ag-Bi-Q-X (Q=S, Se ; X=Cl, Br) syntheses and crystal structures /Poudeu, Pierre Ferdinand Poudeu. Unknown Date (has links) (PDF)
Techn. University, Diss., 2004--Dresden.
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Heteroatomare Polykationen aus ChloroaluminatschmelzenSchlüter, Stefan. Unknown Date (has links) (PDF)
Universiẗat, Diss., 2004--Bonn.
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Quaternary Silver Bismuth Chalcogenide Halides Ag - Bi - Q - X (Q = S, Se; X = Cl, Br): Syntheses and Crystal Structures / Quaternäre Silber Bismut Chalcogenide Halogenide Ag - Bi - Q - X (Q = S, Se; X = Cl, Br): Synthesen und KristallstrukturenPoudeu Poudeu, Pierre Ferdinand 06 January 2004 (has links) (PDF)
Systematic synthetic investigations of the quaternary systems Ag - Bi - Q - X (Q = S, Se; X = Cl, Br) led to a variety of quaternary phases that exhibit considerable structural diversity with increasing complexity. These include Ag1.2Bi17.6S23Cl8, AgBi4Se5Br3 and numerous members of the homologous double series Agx(N+1)Bi2+(1-x)(N+1)Q2+(2-2x)(N+1)X2+(2x-1)(N+1) denoted (N, x)P. N represents the order number of a given homologue and x is the degree of substitution of Bi by Ag with 1/2 <= x <= 1. Their structures are built up from two alternating types of modules denoted A and B that are stacked parallel to (001). In module A, rows of edge-sharing [MZ6] octahedra (Z = X and/or Q); M = Ag and/or Bi) running parallel to [010] alternate along [100] with parallel chains of paired monocapped trigonal prisms around Bi atoms. The module type denoted B represents NaCl-type fragments of varying thickness. It is defined by the number N of octahedra within the chain of edge-sharing octahedra running diagonally across it in the (010) plane of the structure. The thickness of module B for current members of the series extends from N = 0 to N = 7. All structures exhibit Ag/Bi disorder in octahedrally coordinated metal positions and Q/X (Q = S, Se; X = Cl, Br) mixed occupation of some anion positions. Some of these compounds are narrow gap semiconductors.
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Grundlagenuntersuchungen zum elektrisch induzierten Phasenwechsel und Entwicklung lateraler Phasenwechselspeicherbauelemente /Merget, Florian. January 2008 (has links)
Zugl.: Aachen, Techn. Hochsch., Diss., 2008.
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Quasi-van-der-Waals-Epitaxie von II-VI-Halbleitern auf Schichtgitterchalkogeniden und GaSe-terminierten Si(111)-OberflächenWisotzki, Elmar. Unknown Date (has links)
Techn. Universiẗat, Diss., 2003--Darmstadt.
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Quaternary Silver Bismuth Chalcogenide Halides Ag - Bi - Q - X (Q = S, Se; X = Cl, Br): Syntheses and Crystal StructuresPoudeu Poudeu, Pierre Ferdinand 28 January 2004 (has links)
Systematic synthetic investigations of the quaternary systems Ag - Bi - Q - X (Q = S, Se; X = Cl, Br) led to a variety of quaternary phases that exhibit considerable structural diversity with increasing complexity. These include Ag1.2Bi17.6S23Cl8, AgBi4Se5Br3 and numerous members of the homologous double series Agx(N+1)Bi2+(1-x)(N+1)Q2+(2-2x)(N+1)X2+(2x-1)(N+1) denoted (N, x)P. N represents the order number of a given homologue and x is the degree of substitution of Bi by Ag with 1/2 <= x <= 1. Their structures are built up from two alternating types of modules denoted A and B that are stacked parallel to (001). In module A, rows of edge-sharing [MZ6] octahedra (Z = X and/or Q); M = Ag and/or Bi) running parallel to [010] alternate along [100] with parallel chains of paired monocapped trigonal prisms around Bi atoms. The module type denoted B represents NaCl-type fragments of varying thickness. It is defined by the number N of octahedra within the chain of edge-sharing octahedra running diagonally across it in the (010) plane of the structure. The thickness of module B for current members of the series extends from N = 0 to N = 7. All structures exhibit Ag/Bi disorder in octahedrally coordinated metal positions and Q/X (Q = S, Se; X = Cl, Br) mixed occupation of some anion positions. Some of these compounds are narrow gap semiconductors.
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