Ce travail de thèse porte sur l’étude des mécanismes physico-chimiques mis en jeu lors du polissage mécano-chimique du Zerodur® (vitrocéramique) par un abrasif à base d’oxydes de cérium. Les défauts obtenus à l’issu du polissage ont été caractérisés en microscopie optique et par microscopie à force atomique (AFM). Il en ressort deux principales populations, à savoir des rayures de type « fines » (longitudinales et continues) causées par des débris de matière polie. La seconde est la typologie « rayure éclat » (fractures perpendiculaires au sens de la rayure) causées par des agglomérats d’abrasif. Des analyses en spectroscopie RX de l’abrasif montrent une augmentation du ratio Ce3+/Ce4+ après la phase de polissage, confirmant la part chimique du polissage du Zerodur®. Des analyses de potentiel zêta ont été menées sur ces mêmes abrasifs et montrent une évolution de la charge de surface des particules abrasives. Des observations AFM montrent que plus la part Ce4+ est importante et meilleure est la qualité finale de la surface polie. La surface polie a également été sondée en ToF-SIMS. Il en ressort la présence d’une couche enrichie en cérium de plusieurs dizaines de nanomètres, lieu de la réaction mécano-chimique de polissage. Plus précisément, cette réaction semble avoir lieu dans la phase vitreuse du Zerodur®. / This PhD work focuses on the study of the physicochemical mechanisms involved in the chemical-mechanical polishing of Zerodur® (glass-ceramics) with an abrasive based on cerium oxides. The defects observed after polishing were characterized by optical microscopy and atomic force microscopy (AFM). Two main populations were observed, namely "fine" (longitudinal and continuous stripes) caused by debris of polished material. The second is called "scratch" (perpendicular fractures) caused by abrasive agglomerates. RX spectroscopic analyzes of the abrasive showed an increase in the Ce3+/ Ce4+ ratio after the polishing phase. This point confirms the chemical part of Zerodur® polishing. Zeta potential analyzes were carried out on these same abrasives and show an evolution of the abrasive surface charge. AFM observations show that the higher the Ce4+ concentration, the better the final polished surface quality. The polished surface was also probed with ToF-SIMS analyzes. This shows the presence of a cerium-enriched layer of several tens of nanometers, which may be a site for the chemical-mechanical polishing reaction. More precisely, this reaction seems to take place in the glassy phase of Zerodur®.

Global planarization is one of the major demands of the semiconductor industry. Chemical mechanical polishing (CMP) is the planarization method of choice use to achieve the required stringent tolerances essential for successful fabrication of next generation Integrated Circuits (IC). The predominant reason for CMP defects is the shear and normal stresses during polishing to which the material is subjected. Understanding the process of CMP and factor that contribute to overall stress addition during polishing requires an approach that encompasses all the four major categories of variables, namely: a) machine parameters, b) material properties, c) polishing pad characteristics, and d) polishing slurry performance. In this research, we studied the utilized in-situ technique involving acoustic emission (AE) signal monitoring and coefficient of friction (COF) monitoring using a CETRTM Bench Top CMP Tester to evaluate the impact of variation in machine parameters on the CMP process. The mechanical and tribological properties of different candidate materials have been evaluated bring potential challenges in their integration to the fore. The study also involves destructive and non destructive testing of polishing pads performed for characterization and optimization of polishing pad architecture. Finally, the investigation concludes proposing novel nanoparticle CMP slurry which has a predominant chemical component in its polishing mechanism. It was found that the decrease in the mechanical shear and normal loading by: a) operating the process in the low stress regime, b) using potential materials that are mechanically stronger, c) using polishing pads with lesser variation in specific gravity and with a surface that is has its mechanical properties fine tuned to those of the wafer, and d) deploying polishing slurry with a significant chemical component mechanical removal, are some of the approaches that can be employed to meet the future challenges of the CMP process and reduce the defect associated with it.