In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five experimental studies aimed at either directly exploring the properties of the above three interaction phenomena or the development of novel device structures that exploit the strong particle-particle interactions found in p-GaAs for the study of many body phenomena. Firstly, we demonstrate a novel semiconductor-insulator-semiconductor field effect transistor (SISFET), designed specifically to induced 2D hole systems at a ????normal???? AlGaAs-on-GaAs heterojunction. The novel SISFETs feature in our studies of the metallic behavior in 2D systems in which we examine temperature corrections to ????xx(T) and ????xy(T) in short- and long-range disorder potentials. Next, we shift focus to bilayer hole systems and the many body quantum Hall states that form a nu = 1 in the presence of strong interlayer interactions. We explore the evolution of this quantum Hall state as the relative densities in the layers is imbalanced while the total density is kept constant. Finally, we demonstrate a novel p-type quantum point contact device that produce the most stable and robust current quantization in a p-type 1D systems to date, allowing us to observed for the first time the 0.7 structure in a p-type device.

In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We present low-temperature magneto-transport data from three forms of low-dimensional systems 1) 2D hole systems: in order to study interaction contributions to the metallic behavior of 2D systems 2) Bilayer hole systems: in order to study the many body, bilayer quantum Hall state at nu = 1 3) 1D hole systems: for the study of the anomalous conductance plateau G = 0.7 ???? 2e2/h The work is divided into five experimental studies aimed at either directly exploring the properties of the above three interaction phenomena or the development of novel device structures that exploit the strong particle-particle interactions found in p-GaAs for the study of many body phenomena. Firstly, we demonstrate a novel semiconductor-insulator-semiconductor field effect transistor (SISFET), designed specifically to induced 2D hole systems at a ????normal???? AlGaAs-on-GaAs heterojunction. The novel SISFETs feature in our studies of the metallic behavior in 2D systems in which we examine temperature corrections to ????xx(T) and ????xy(T) in short- and long-range disorder potentials. Next, we shift focus to bilayer hole systems and the many body quantum Hall states that form a nu = 1 in the presence of strong interlayer interactions. We explore the evolution of this quantum Hall state as the relative densities in the layers is imbalanced while the total density is kept constant. Finally, we demonstrate a novel p-type quantum point contact device that produce the most stable and robust current quantization in a p-type 1D systems to date, allowing us to observed for the first time the 0.7 structure in a p-type device.

京都大学 / 0048 / 新制・論文博士 / 博士(工学) / 乙第13240号 / 論工博第4178号 / 新制||工||1720(附属図書館) / (主査)教授 木本 恒暢, 教授 藤田 静雄, 教授 山田 啓文 / 学位規則第4条第2項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

To study transport properties in single InAs nanowires (NW) with etched constrictions, a bunch of back-gated single InAs NW devices were made. The standard device contained a NW section with an etched constriction, placed between two pre-patterned side-gates. For comparison, devices either without etched constriction or without side-gates were also fabricated. Transport measurement results of three devices were presented and discussed. The device without side-gates exhibited Coulomb blockade due to electron tunneling through double quantum dots (QDs). The device without the etched constriction displayed conductance quantization. The standard device showed both Coulomb blockade (due to electron tunneling through either multiple QDs or single QD) and Fabry-Perot conductance oscillation at different gate bias regime. A 3-D electrostatic and 2-D eigenvalue coupled simulation was conducted to explain the observed conductance quantization. This model suggests that the nonuniform potential distribution in a thick NW dramatically modifies the confinement energies in the NW.

To study transport properties in single InAs nanowires (NW) with etched constrictions, a bunch of back-gated single InAs NW devices were made. The standard device contained a NW section with an etched constriction, placed between two pre-patterned side-gates. For comparison, devices either without etched constriction or without side-gates were also fabricated. Transport measurement results of three devices were presented and discussed. The device without side-gates exhibited Coulomb blockade due to electron tunneling through double quantum dots (QDs). The device without the etched constriction displayed conductance quantization. The standard device showed both Coulomb blockade (due to electron tunneling through either multiple QDs or single QD) and Fabry-Perot conductance oscillation at different gate bias regime. A 3-D electrostatic and 2-D eigenvalue coupled simulation was conducted to explain the observed conductance quantization. This model suggests that the nonuniform potential distribution in a thick NW dramatically modifies the confinement energies in the NW.

The aim of the study presented in this thesis is to explore the electrical and physical properties of films of tin and lead clusters. Understanding the novel conductance properties of cluster films and related phenomenon such as coalescence is important to fabricate any cluster based devices. Coalescence is an important phenomenon in metallic cluster films. Due to coalescence the morphology of the films changes with time which changes their properties and could lead to failure in cluster devices. Coalescence is studied in Sn and Pb cluster films deposited on Si$_3$N$_4$ surfaces using Ultra High Vacuum (UHV) cluster deposition system. The conductance of the overall film is linked to the conductance of the individual necks between clusters by simulations. It is observed that the coalescence process in Sn and Pb films follows a power law in time with an exponent smaller than reported in literature. These results are substantiated by the results from previous experimental and Kinetic Monte Carlo (KMC) simulation studies at UC. Percolating films of Sn show unique conductance properties. These films are characterized using various electrode configurations, applied voltages and temperatures. The conductance measurements are performed by depositing clusters on prefabricated gold electrodes on top of Si$_3$N$_4$ substrates. Sn cluster films exhibit a variety of conductance behaviours during and after the end of deposition. It is observed that the evolution of conductance during the onsets at percolation threshold is dependent on the film morphology. Samples showing difference responses in onset also behave differently after the end of deposition. Therefore all samples were categorized according to their onset behaviour. After the end of deposition, when a bias voltage is applied, the conductance of Sn films steps up and down between various well-defined conductance levels. It is also observed that in many cases the conductance levels between which these devices jump are close to integral multiples of the conductance quantum. There are many possible explanations for the steps in conductance. One of the explanations is formation and breaking of conducting paths in the cluster films by electric field induced evaporation and electromigration respectively. The stepping behaviour is similar to that in non-volatile memory devices and hence very interesting to explore due to potential applications.

Orientador: Daniel Mario Ugarte / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-08T07:13:58Z (GMT). No. of bitstreams: 1 LagosParedes_MaureenJoel_M.pdf: 3881181 bytes, checksum: 517e8507ccdf35f0fa7a7f9fcb4b3b84 (MD5) Previous issue date: 2007 / Resumo: O estudo de fios metálicos de tamanho atômico (NF's) tem atraído grande interesse devido aos novos efeitos químicos e físicos neles observados. Entre esses novos fenômenos podemos destacar a quantização da condutância, efeito que deve ser fundamental no desenho dos novos nanodispositivos eletrônicos. NF's são usualmente gerados através de um procedimento simples de deformação mecânica: duas superfícies metálicas são colocadas em contato e depois afastadas. Nos últimos estágios do estiramento antes da ruptura, um fio de alguns átomos de diâmetro é gerado enquanto a condutância é medida. Os NF's têm sido estudados por diferentes grupos e, em diversas condições de temperatura (4 - 300 K) e pressão (de ambiente a UHV). Os resultados apresentam importantes variações e, têm gerado interpretações muito controversas. Devemos enfatizar que muitas interpretações têm sido feitas sem considerar que a deformação estrutural dos NF's deve depender fortemente da temperatura. Nesta tese estudamos as propriedades estruturais e eletrônicas NF's e, em particular analisamos a influência de efeitos térmicos no arranjo atômico, e sua manifestação na condutância. A estrutura dos NF's foi estudada por microscopia eletrônica de transmissão de alta resolução resolvidas no tempo. A condutância foi medida utilizando um sistema de quebra controlada de junções operado em ultra-alto-vácuo. Os experimentos foram realizados a ~150 e 300 K. Nossos resultados mostraram que, à temperatura ambiente os NF's são sempre cristalinos e livre de defeitos nas regiões mais finas; e deformam unicamente ao longo dos eixos cristalográficos [111], [100] e [110]. A baixa temperatura duas importantes diferenças foram observadas: (i) NF's de ouro apresentam defeitos, principalmente falhas de empilhamento e maclas. (ii) NF's alongados na direção [110] evoluem em cadeias atômicas, de comportamento mecânico muito diferente da temperatura ambiente, onde quebram abruptamente. Segundo as imagens de microscopia eletrônica, discordâncias parciais (Shockley) geram falhas de empilhamento; e cadeias de átomos suspensos são observados a ~150 e 300 K. Histogramas globais de condutância adquiridos a baixa temperatura revelaram: (i) aumento da intensidade do pico ~1 Go; (ii) leve diminuição da condutância devido ao aumento de defeitos; e (iii) a existência de uma sub-estrutura no pico ~2 Go, indicando a formação de dois arranjos atômicos estáveis. Resumidamente, nossos resultados mostram que a formação de defeitos é um evento freqüente a ~150 K. Provavelmente, mais defeitos na estrutura devem acontecer para temperaturas menores (4 - 10 K). Portanto, uma importante mudança na evolução da condutância durante a elongação de NF's deve ser esperado a baixa temperatura. Assim, a comparação direta de medidas de transporte de NF's realizadas a diferentes temperaturas pode levar a sérias discrepâncias. Esperamos ter contribuído a melhorar a compreensão e interpretação de experimentos de transporte realizados em diferentes condições, de modo tal, a gerar um modelo único e coerente que explique as propriedades físicas de NF's metálicos / Abstract: The study of atomic-size metal nanowires (NW's) is attracting a great interest due to occurrence a novel physical and chemical phenomena. Among these new phenomena, we can mention conductance quantization that will certainly influence the design of nanodevices. NW's are usually generated by means of a simple procedure: two metallic surfaces are put into contact and, then retracted. Just before rupture atomic-size NW's are formed, and the conductance is measured during the wire elongation. The interpretation of the results is troublesome, because conductance is measured during the modification of the atomic structure. This kind of experimental study has been performed by many research groups and, a quite wide range of temperatures (4 - 300 K) and vacuum condition have been used (from ambient to UHV). In fact, the results display significant variation, what has generated several controversial interpretations. It must be emphasized that many models have been derived without taking into account that the NW structural deformation should be significantly dependent on temperature. In this Thesis research work, we have studied the structural and electronic properties of gold NW's, in particular addressing how thermal effects influence the atomistic aspects of the NW deformation and how this influences the quantum conductance behavior. The structure of NW's has been studied by means of time-resolved high resolution transmission electron microscopy; the NWs transport measurements were based on a mechanically controlled break junction operated in ultra-high-vacuum. The experiments were performed at ~150 and 300 K. Our results have shown that at room temperature the atomic-size NW's. are always crystalline and free of defects, and the atomic structure is spontaneously deformed such that one of the [111]/[100]/[110] crystallographic axis becomes approximately parallel to the stretching direction. Low temperature observations revealed two important differences: i) Au NWs show extended defects, mainly stacking faults and, twinning; ii) NWs elongated along the [110] axis evolve to suspended atomic chains, while at room temperature they break abruptly. Partial Schockley dislocations generate the staking faults; suspended atoms chains are both observed at ~150 and 300 K. The global histograms of conductance at ~150 K showed that: i) a increase of the 1 Go peak intensity; ii) slight reduction of the NWs conductance due to scattering at defects and; iii) the peak at ~2 Go shows a sub structure, what is due to the occurrence of two different atomic arrangements with similar conductance. Briefly, our results revealed that the formation of defects is very frequent in NWs generated at ~150 K; the occurrence of more defects should be expected when NWs are studied at cryogenic temperatures. Then, a significant modification of the NW conductance behavior should be expected at low temperature. In these terms, the direct comparison of conductance measurements realized at different temperature regimes can lead to serious discrepancies. We hope that this work contribute to improve the interpretation and understanding of NW transport studies in order to develop a coherent and complete model that explain the physical properties of atomic-size metal NWs / Mestrado / Física da Matéria Condensada / Mestre em Física

Orientador: Daniel Mario Ugarte / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-08T07:13:40Z (GMT). No. of bitstreams: 1 LagosParedes_MaureenJoel_M.pdf: 10524108 bytes, checksum: 4c8c3fb76ef4ed87845ad6eb88cf42e9 (MD5) Previous issue date: 2007 / Resumo: O estudo de fios metálicos de tamanho atômico (NF's) tem atraído grande interesse devido aos novos efeitos químicos e físicos neles observados. Entre esses novos fenômenos podemos destacar a quantização da condutância, efeito que deve ser fundamental no desenho dos novos nanodispositivos eletrônicos. NF's são usualmente gerados através de um procedimento simples de deformação mecânica: duas superfícies metálicas são colocadas em contato e depois afastadas. Nos últimos estágios do estiramento antes da ruptura, um fio de alguns átomos de diâmetro é gerado enquanto a condutância é medida. Os NF's têm sido estudados por diferentes grupos e, em diversas condições de temperatura (4 - 300 K) e pressão (de ambiente a UHV). Os resultados apresentam importantes variações e, têm gerado interpretações muito controversas. Devemos enfatizar que muitas interpretações têm sido feitas sem considerar que a deformação estrutural dos NF's deve depender fortemente da temperatura. Nesta tese estudamos as propriedades estruturais e eletrônicas NF's e, em particular analisamos a influência de efeitos térmicos no arranjo atômico, e sua manifestação na condutância. A estrutura dos NF's foi estudada por microscopia eletrônica de transmissão de alta resolução resolvidas no tempo. A condutância foi medida utilizando um sistema de quebra controlada de junções operado em ultra-alto-vácuo. Os experimentos foram realizados a ~150 e 300 K. Nossos resultados mostraram que, à temperatura ambiente os NF's são sempre cristalinos e livre de defeitos nas regiões mais finas; e deformam unicamente ao longo dos eixos cristalográficos [111], [100] e [110]. A baixa temperatura duas importantes diferenças foram observadas: (i) NF's de ouro apresentam defeitos, principalmente falhas de empilhamento e maclas. (ii) NF's alongados na direção [110] evoluem em cadeias atômicas, de comportamento mecânico muito diferente da temperatura ambiente, onde quebram abruptamente. Segundo as imagens de microscopia eletrônica, discordâncias parciais (Shockley) geram falhas de empilhamento; e cadeias de átomos suspensos são observados a ~150 e 300 K. Histogramas globais de condutância adquiridos a baixa temperatura revelaram: (i) aumento da intensidade do pico ~1 Go; (ii) leve diminuição da condutância devido ao aumento de defeitos; e (iii) a existência de uma sub-estrutura no pico ~2 Go, indicando a formação de dois arranjos atômicos estáveis. Resumidamente, nossos resultados mostram que a formação de defeitos é um evento freqüente a ~150 K. Provavelmente, mais defeitos na estrutura devem acontecer para temperaturas menores (4 - 10 K). Portanto, uma importante mudança na evolução da condutância durante a elongação de NF's deve ser esperado a baixa temperatura. Assim, a comparação direta de medidas de transporte de NF's realizadas a diferentes temperaturas pode levar a sérias discrepâncias. Esperamos ter contribuído a melhorar a compreensão e interpretação de experimentos de transporte realizados em diferentes condições, de modo tal, a gerar um modelo único e coerente que explique as propriedades físicas de NF's metálicos / Abstract: The study of atomic-size metal nanowires (NW's) is attracting a great interest due to occurrence a novel physical and chemical phenomena. Among these new phenomena, we can mention conductance quantization that will certainly influence the design of nanodevices. NW's are usually generated by means of a simple procedure: two metallic surfaces are put into contact and, then retracted. Just before rupture atomic-size NW's are formed, and the conductance is measured during the wire elongation. The interpretation of the results is troublesome, because conductance is measured during the modification of the atomic structure. This kind of experimental study has been performed by many research groups and, a quite wide range of temperatures (4 - 300 K) and vacuum condition have been used (from ambient to UHV). In fact, the results display significant variation, what has generated several controversial interpretations. It must be emphasized that many models have been derived without taking into account that the NW structural deformation should be significantly dependent on temperature. In this Thesis research work, we have studied the structural and electronic properties of gold NW's, in particular addressing how thermal effects influence the atomistic aspects of the NW deformation and how this influences the quantum conductance behavior. The structure of NW's has been studied by means of time-resolved high resolution transmission electron microscopy; the NWs transport measurements were based on a mechanically controlled break junction operated in ultra-high-vacuum. The experiments were performed at ~150 and 300 K. Our results have shown that at room temperature the atomic-size NW's. are always crystalline and free of defects, and the atomic structure is spontaneously deformed such that one of the [111]/[100]/[110] crystallographic axis becomes approximately parallel to the stretching direction. Low temperature observations revealed two important differences: i) Au NWs show extended defects, mainly stacking faults and, twinning; ii) NWs elongated along the [110] axis evolve to suspended atomic chains, while at room temperature they break abruptly. Partial Schockley dislocations generate the staking faults; suspended atoms chains are both observed at ~150 and 300 K. The global histograms of conductance at ~150 K showed that: i) a increase of the 1 Go peak intensity; ii) slight reduction of the NWs conductance due to scattering at defects and; iii) the peak at ~2 Go shows a sub structure, what is due to the occurrence of two different atomic arrangements with similar conductance. Briefly, our results revealed that the formation of defects is very frequent in NWs generated at ~150 K; the occurrence of more defects should be expected when NWs are studied at cryogenic temperatures. Then, a significant modification of the NW conductance behavior should be expected at low temperature. In these terms, the direct comparison of conductance measurements realized at different temperature regimes can lead to serious discrepancies. We hope that this work contribute to improve the interpretation and understanding of NW transport studies in order to develop a coherent and complete model that explain the physical properties of atomic-size metal NWs / Mestrado / Física da Matéria Condensada / Mestre em Física

La technique de la microscopie à grille de balayage (SGM) consiste à mesurer la conductance d'un gaz bidimensionnel d'électrons (2DEG) sous l'influence d'une pointe balayant la surface de l'échantillon. Dans ce travail, une approche analytique complétée par des simulations numériques est développée pour étudier la relation entre les mesures SGM et les propriétés électroniques locales dans des systèmes mésoscopiques. La correspondance entre la réponse SGM et la densité locale partielle (PLDOS) est étudiée pour un contact quantique entouré d’un 2DEG en présence ou en absence de désordre, pour une pointe perturbative ou non perturbative. Une correspondance SGM-PLDOS parfaite est trouvée pour des transmissions entières et des pointes locales. La dégradation de la correspondance en dehors de cette situation est étudiée. D’autre part, la liaison entre la réponse SGM et la transformée de Hilbert de la densité locale est discutée. Pour étudier le rôle de la force de la pointe sur la conductance SGM, une formule analytique donnant la conductance totale est obtenue. Dans le cas d'une pointe à taille finie nous proposons une méthode basée sur les fonctions de Green permettant de calculer la conductance en connaissant les propriétés non-perturbées. En plus, nous avons étudié la dépendance des branches de la PLDOS en fonction de l’énergie de Fermi. / The scanning gate microscopy (SGM) technique consists in measuring the conductance of a two dimensional electron gas (2DEG) under the influence of a scanning tip. In this work, an analytical approach complemented by numerical simulations is developed to study the connection between SGM measurements and local electronic properties in mesoscopic devices. The connection between the SGM response and the partial local density of states (PLDOS) is studied for the case of a quantum point contact surrounded by clean or disordered 2DEG for perturbative or non-perturbative, local or extended tips. An SGM-PLDOS correspondence is found for integer transmissions and local tips. The degradation of this correspondence out of these conditions is studied. Moreover, a presumed link between the SGM response and the Hilbert transform of the LDOS is discussed. To study the role of the tip strength, an analytical formula giving the full conductance in the case of local tips is obtained. Furthermore, a Green function method enabling to calculate the quantum conductance in the presence of a finite size tip in terms of the unperturbed properties is proposed. Finally the dependence of the PLDOS branches on the Fermi energy is studied.