For the past four decades, Moore's law has been the most important benchmark in microelectronic circuits. Continuous improvement in lithographic technology has key enabler for growth in transistor density. In recent times, the wavelength of the light source has not kept its pace in scaling. Consequently, modern devices have feature sizes that are smaller than the wavelength of light source used currently in lithography. Printability in sub-wavelength lithography is one of the contemporary research issues. Some of the printability issues arise from optical defocus, lens aberration, wafer tilting, isotropic etching and resist thickness variation. Many of such sources lead to line width variation in today's layouts. In this work we propose to simulate such lithographic variation and estimate their impact on current devices and interconnects. We also propose to model such effects and aim to provide measures at the design level to mitigate these problems. Variations arising out of lithography process also impact yield and performance. We plan to study the impact of sub-wavelength lithography on yield and provide solutions for its measure, and directed pattern developement and testing.

En microélectronique, l'augmentation de la densité des composants est la solution principale pour améliorer la performance des circuits. Ainsi, la taille des structures définies par la lithographie diminue à chaque changement de nœud technologique. A partir du nœud 14 nm, la lithographie optique est confrontée à la limite de résolution pour les niveaux métalliques. Pour surmonter cet obstacle, les niveaux métalliques sont conçus en deux étapes successives de patterning regroupant chacune une étape de lithographie et une étape de gravure. Cette technique, nommée double patterning, requiert une métrologie adaptée car l'alignement entre les deux étapes et les dimensions critiques sont alors directement liées. La méthode de mesure développée dans cette thèse repose sur la scattérométrie et la mesure de l'alignement par diffraction. Un code de simulation a permis d'optimiser la conception des mires de mesure. De plus, la méthode de mesure adoptée a pu être validée expérimentalement. / In microelectronics, the increase of component density is the main solution to improve circuit performance. The size of the patterns defined by lithography is reduced at each change of technology node. From the 14 nm node, optical lithography is facing the resolution limit for metal levels. In order to overcome this hurdle, metal levels are designed in two successive steps of patterning, which is composed of lithography followed by etching. This double patterning technique requires an appropriate metrology since overlay between the two steps and critical dimensions are directly linked. The developed method is based on scatterometry and overlay measurement by diffraction. Using a simulation code, the measurement targets have been designed optimally. Then the adopted method has been validated experimentally.

Roll-to-roll manufacturing of micro components based on advanced printing, structuring and lamination of ceramic tapes is rapidly progressing. This large-scale and cost-effective manufacturing process of ceramic micro devices is however prone to hide defects within the visually opaque tape stacks. To achieve a sustainable manufacturing with zero defects in the future, there is an urgent need for reliable inspection systems. The systems to be developed have to perform high-resolution in-process quality control at high speed. Optical coherence tomography (OCT) is a promising technology for detailed in-depth inspection and metrology. Combined with infrared screening of larger areas it can solve the inspection demands in the roll-to-roll ceramic tape processes. In this thesis state-of-art commercial and laboratory OCT systems, operating at the central wavelength of 1.3 µm and 1.7 µm respectively, are evaluated for detecting microchannels, metal prints, defects and delaminations embedded in alumina and zirconia ceramic layers at hundreds of micrometers beneath surfaces. The effect of surface roughness induced scattering and scattering by pores on the probing radiation, is analyzed by experimentally captured and theoretically simulated OCT images of the ceramic samples, while varying surface roughnesses and operating wavelengths. By extending the Monte Carlo simulations of the OCT response to the mid-infrared the optimal operating wavelength is found to be 4 µm for alumina and 2 µm for zirconia. At these wavelengths we predict a sufficient probing depth of about 1 mm and we demonstrate and discuss the effect of rough surfaces on the detectability of embedded boundaries. For high-precision measurement a new and automated 3D image processing algorithm for analysis of volumetric OCT data is developed. We show its capability by measuring the geometric dimensions of embedded structures in ceramic layers, extracting features with irregular shapes and detecting geometric deformations. The method demonstrates its suitability for industrial applications by rapid inspection of manufactured samples with high accuracy and robustness. The new inspection methods we demonstrate are finally analyzed in the context of measurement uncertainty, both in the axial and lateral cases, and reveal that scattering in the sample indeed affects the lateral measurement uncertainty. Two types of image artefacts are found to be present in OCT images due to multiple reflections between neighboring boundaries and inhomogeneity of refractive index. A wavefront aberration is found in the OCT system with a scanning scheme of two galvo mirrors, and it can be corrected using our image processing algorithm. / <p>QC 20140428</p> / Multilayer (FP7-NMP4-2007-214122)