Global ETD Search

1	Development and validation of a model for the response of the Belle II vertex detector Schwenker, Benjamin 16 October 2014 (has links) No description available. 530 Physik (PPN621336750) SuperKEKB BelleII Vertexing DEPFET EUDET
2	Study of macroscopic and microscopic homogeneity of DEPFET X-ray detectors / Untersuchung der makroskopischen und mikroskopischen Homogenität von DEPFET-Röntgendetektoren Bergbauer, Bettina 15 January 2016 (has links) (PDF) For the X-ray astronomy project Advanced Telescope for High ENergy Astrophysics (Athena) wafer-scale DEpleted P-channel Field Effect Transistor (DEPFET) detectors are proposed as Focal Plane Array (FPA) for the Wide Field Imager (WFI). Prototype structures with different pixel layouts, each consisting of 64 x 64 pixels, were fabricated to study four different DEPFET designs. This thesis reports on the results of the electrical and spectroscopic characterization of the different DEPFET designs. With the electrical qualification measurements the transistor properties of the DEPFET structures are investigated in order to determine whether the design intentions are reflected in the transistor characteristics. In addition, yield and homogeneity of the prototypes can be studied on die, wafer and batch level for further improvement of the production technology with regard to wafer-scale devices. These electrical characterization measurements prove to be a reliable tool to preselect the best detector dies for further integration into full detector systems. The spectroscopic measurements test the dynamic behavior of the designs as well as their spectroscopic performance. In addition, it is revealed how the transistor behavior translates into the detector performance. This thesis, as the first systematic study of different DEPFET designs on die and detector level, shows the limitations of the current DEPFET assessment methods. Thus, it suggests a new concise characterization procedure for DEPFET detectors as well as guidelines for expanded testing in order to increase the general knowledge of the DEPFET. With this study of four different DEPFET variants not only designs suitable for Athena mission have been found but also improvement impulses for the starting wafer-scale device production are provided. Röntgendetektor Röntgenspektroskopie Siliziumdetektor Aktiver Pixelsensor DEPFET DEPFET Designstudie MOSFET Transistor Athena X-ray detectors X-ray spectroscopy Silicon-based detectors Active pixel sensor DEPFET DEPFET design study MOSFET Transistor Athena Wide-Field Imager ddc:621 ddc:537 Röntgendetektor DePFET Feldeffekttransistor Röntgenspektroskopie Transistor
3	Study of macroscopic and microscopic homogeneity of DEPFET X-ray detectors Bergbauer, Bettina 17 December 2015 (has links) For the X-ray astronomy project Advanced Telescope for High ENergy Astrophysics (Athena) wafer-scale DEpleted P-channel Field Effect Transistor (DEPFET) detectors are proposed as Focal Plane Array (FPA) for the Wide Field Imager (WFI). Prototype structures with different pixel layouts, each consisting of 64 x 64 pixels, were fabricated to study four different DEPFET designs. This thesis reports on the results of the electrical and spectroscopic characterization of the different DEPFET designs. With the electrical qualification measurements the transistor properties of the DEPFET structures are investigated in order to determine whether the design intentions are reflected in the transistor characteristics. In addition, yield and homogeneity of the prototypes can be studied on die, wafer and batch level for further improvement of the production technology with regard to wafer-scale devices. These electrical characterization measurements prove to be a reliable tool to preselect the best detector dies for further integration into full detector systems. The spectroscopic measurements test the dynamic behavior of the designs as well as their spectroscopic performance. In addition, it is revealed how the transistor behavior translates into the detector performance. This thesis, as the first systematic study of different DEPFET designs on die and detector level, shows the limitations of the current DEPFET assessment methods. Thus, it suggests a new concise characterization procedure for DEPFET detectors as well as guidelines for expanded testing in order to increase the general knowledge of the DEPFET. With this study of four different DEPFET variants not only designs suitable for Athena mission have been found but also improvement impulses for the starting wafer-scale device production are provided. info:eu-repo/classification/ddc/621 ddc:621 info:eu-repo/classification/ddc/537 ddc:537
4	Commissioning and first data taking experience with the Belle II pixel vertex detector Schreeck, Harrison 22 May 2020 (has links) No description available. 530 Physik (PPN621336750) Belle II DEPFET Radiation damage Particle tracking detectors
5	Meření CP narušení na experimentu Belle v rozpadech B0 → ŋcK0S metodou tzv. časové analýzy, optimalizace vrcholového detektoru pro expriment Belle II. / Measurement of Time-Dependent CP Violation in B0 → ŋcK0S at Belle Experiment, Optimization Studies of the Belle II Vertex Detector Drásal, Zbyněk January 2014 (has links) Title: Measurement of Time-Dependent CP Violation in B0 → ηcK0 S at Belle Experi- ment, Optimization Studies of the Belle II Vertex Detector Author: Zbyněk Drásal Department: Institute of Particle and Nuclear Physics Supervisor: Dr. Zdeněk Doležal, IPNP Supervisor's e-mail address: Zdenek.Dolezal@mff.cuni.cz Abstract: This doctoral thesis deals with two independent topics. In the first part we present a measurement of branching ratio(s) and time-dependent CP violation parame- ters in B0 (B± ) → ηcK0 S(K± ), ηc → p¯p. The values of CP violation parameters have been found as follows: sin 2φ1, denoted as an SCP parameter, equals: SCP = 0.68+0.38 −0.46±0.13syst, the direct CP violation parameter, denoted as an ACP , is: ACP = 0.00+0.23 −0.31 ± 0.08syst. These results have been obtained with the final data sample of 772×106 B ¯B pairs collected at Υ(4S) resonance with a Belle detector at the KEKB e+ e− asymmetric collider machine in Japan. In the second part, we present our approach to the Monte Carlo (MC) simula- tion of Belle II vertex detector and its response to high energy particles. Belle II represents an upgrade of current Belle experiment and its designed vertex detector will consist of 2 layers of Depfet pixel detectors (PXD) and 4 layers of double-sided silicon micro-strip detectors (SVD). The MC...

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