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Studies of oxygen implantation induced deep level defects in zinc oxide single crystalYe, Ziran., 叶自然. January 2011 (has links)
Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its wide applicability. In order to obtain semiconductor devices with stable and reproducible properties further study of deep level defects is essential. DLTS (Deep level Transient Spectroscopy) is a direct and straightforward techniqueto determine the energy level of the deep level defects. Other information such as activation energy and capture cross section of the defect can also be obtained through this method. In our study ZnO single crystal samples were implanted by oxygen with the energy of 150keV. After the pretreatment of hydrogen peroxide, Schottky contacts were fabricated with Au
film deposited by thermal evaporation.
Deep level defects were studied by deep level transient spectroscopy (DLTS). Single peak spectra were observed in the as-implanted sample and samples anneal at 350oC, 650oC and 750oC with the corresponding activation energy decreasing with the annealing temperature from ~0.29eV as found in theas-implanted sample. Three peaks were identified in the DLTS spectra of the 900oC sample, with the activation energies of 0.11eV, 0.16eV and 0.37eV respectively.After analysis in detail we found some peaks in the DLTS spectra were the combination of two other peaks, dominated in different temperature range. The thermal evolutions of the deep levels up to the temperature of 1200oC were also investigated. / published_or_final_version / Physics / Master / Master of Philosophy
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Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient method謝敏, Tsia, Man, Juliana. January 2000 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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CV and DLTS analysis of materials for microelectronic applications /Lohn, Christopher, January 1900 (has links)
Thesis (M.S.)--Texas State University-San Marcos, 2008. / Vita. Appendices: leaves 132 -234. Includes bibliographical references (leaves 235-236). Also available on microfilm.
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Deep level defects study of arsenic implanted ZnO single crystalZhu, Congyong. January 2008 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2008. / Includes bibliographical references (leaf 68-75) Also available in print.
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Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS /Nyamhere, Cloud. January 2009 (has links)
Thesis (Ph.D.(Physics))--University of Pretoria, 2009. / Includes abstract in English. Includes bibliographical references. Also available online.
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Digital DLTS studies on radiation induced defects in Si, GaAs and GaNMeyer, Walter Ernst. January 2006 (has links)
Thesis (Ph.D.)(Physics)--University of Pretoria, 2006. / Includes summary. Includes bibliographical references. Available on the Internet via the World Wide Web.
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Deep level defects study of arsenic implanted ZnO single crystalZhu, Congyong., 朱從佣. January 2008 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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Development of optimized deconvoluted coincidence doppler broadening spectroscopy and deep level transient spectroscopies with applicationsto various semiconductor materialsZhang, Jingdong., 張敬東. January 2006 (has links)
published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy
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Fourier deep level transient spectroscopy and its application to gold in siliconDivekar, Prasad K. 03 July 2002 (has links)
A primarily software based Fourier Deep Level Transient Spectroscope
(FDLTS) is built. The raw capacitance transient is acquired and digitized using
capacitance meter HP4280A whereas the signal analysis is done using a customized
software module. The software module calculates both the conventional DLTS spectrum
and the Fourier DLTS spectrum. This home-made FDLTS set up was compared
to a commercial conventional box-car DLTS system (Sula Technology's DLTS)
as well as to a commercial Fourier DLTS system (Bio-rad) and it was found to be
either equivalent to the commercial systems or even better in some respects. In one
case, Fourier analysis using the home-made setup, led to the detection of a trap
completely undetected by the commercial conventional DLTS. The FDLTS system
together with the commercial conventional DLTS were used to study possible gold
contamination in an industrial process. The study was accomplished by comparing
conventional and Fourier DLTS spectra and corresponding calculated trap properties
using Schottky barrier diodes fabricated on the suspect wafers and an intentionally
gold diffused reference sample wafer. During the investigation minority carrier emission
in DLTS using Schottky barrier diodes was observed. The study revealed the
presence of some possible gold-like contamination which trapped minority carriers
(i.e. electrons) in p type silicon. / Graduation date: 2003
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Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN filmsArmstrong, Andrew M., January 2006 (has links)
Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 232-237).
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